TY - JOUR
T1 - A highly linear receiver front-end employing modified derivative superposition method with tuned inductors for 5.25 GHz
AU - Ahn, Youngbin
AU - Park, Chiwan
AU - Lee, Jaehoon
AU - Jeong, Jichai
N1 - Funding Information:
This research was supported in part by the Brain Korea 21 Project, 2009, and the WCU (World Class University) program through the Korea Science and Engineering Foundation funded by the Ministry of Education, Science and Technology ( R31-2008-000-10008-0 ), and IDEC (IC Design Education Center) for CAD tools.
Copyright:
Copyright 2010 Elsevier B.V., All rights reserved.
PY - 2010/12
Y1 - 2010/12
N2 - We design a highly linear CMOS RF receiver front-end operating in the 5 GHz band using the modified derivative superposition (DS) method with one- or two-tuned inductors in the low noise amplifier (LNA) and mixer. This method can be used to adjust the magnitude and phase of the third-order currents at output, and thus ensure that they cancel each other out. We characterize the two front-ends by the third-order input intercept point (IIP3), voltage conversion gain, and a noise figure based on the TSMC 0.18 μm RF CMOS process. Our simulation results suggest that the front-end with one-tuned inductor in the mixer supports linearization with the DS method, which only sacrifices 1.9 dB of IIP3 while the other performance parameters are improved. Furthermore, the front-end with two-tuned inductors requires a precise optimum design point, because it has to adjust two inductances simultaneously for optimization. If the inductances have deviated from the optimum design point, the front-end with two-tuned inductors has worse IIP3 characteristic than the front-end with one-tuned inductor. With two-tuned inductors, the front-end has an IIP3 of 5.3 dBm with a noise figure (NF) of 4.7 dB and a voltage conversion gain of 23.1 dB. The front-end with one-tuned inductor has an IIP3 of 3.4 dBm with an NF of 4.4 dB and a voltage conversion gain of 24.5 dB. There is a power consumption of 9.2 mA from a 1.5 V supply.
AB - We design a highly linear CMOS RF receiver front-end operating in the 5 GHz band using the modified derivative superposition (DS) method with one- or two-tuned inductors in the low noise amplifier (LNA) and mixer. This method can be used to adjust the magnitude and phase of the third-order currents at output, and thus ensure that they cancel each other out. We characterize the two front-ends by the third-order input intercept point (IIP3), voltage conversion gain, and a noise figure based on the TSMC 0.18 μm RF CMOS process. Our simulation results suggest that the front-end with one-tuned inductor in the mixer supports linearization with the DS method, which only sacrifices 1.9 dB of IIP3 while the other performance parameters are improved. Furthermore, the front-end with two-tuned inductors requires a precise optimum design point, because it has to adjust two inductances simultaneously for optimization. If the inductances have deviated from the optimum design point, the front-end with two-tuned inductors has worse IIP3 characteristic than the front-end with one-tuned inductor. With two-tuned inductors, the front-end has an IIP3 of 5.3 dBm with a noise figure (NF) of 4.7 dB and a voltage conversion gain of 23.1 dB. The front-end with one-tuned inductor has an IIP3 of 3.4 dBm with an NF of 4.4 dB and a voltage conversion gain of 24.5 dB. There is a power consumption of 9.2 mA from a 1.5 V supply.
KW - Derivative superposition method
KW - Front-end
KW - LNA
KW - Linearization
KW - Mixer
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U2 - 10.1016/j.mejo.2010.07.015
DO - 10.1016/j.mejo.2010.07.015
M3 - Article
AN - SCOPUS:78649331808
VL - 41
SP - 882
EP - 888
JO - Microelectronics Journal
JF - Microelectronics Journal
SN - 0959-8324
IS - 12
ER -