Abstract
We design a highly linear CMOS RF receiver front-end operating in the 5 GHz band using the modified derivative superposition (DS) method with one- or two-tuned inductors in the low noise amplifier (LNA) and mixer. This method can be used to adjust the magnitude and phase of the third-order currents at output, and thus ensure that they cancel each other out. We characterize the two front-ends by the third-order input intercept point (IIP3), voltage conversion gain, and a noise figure based on the TSMC 0.18 μm RF CMOS process. Our simulation results suggest that the front-end with one-tuned inductor in the mixer supports linearization with the DS method, which only sacrifices 1.9 dB of IIP3 while the other performance parameters are improved. Furthermore, the front-end with two-tuned inductors requires a precise optimum design point, because it has to adjust two inductances simultaneously for optimization. If the inductances have deviated from the optimum design point, the front-end with two-tuned inductors has worse IIP3 characteristic than the front-end with one-tuned inductor. With two-tuned inductors, the front-end has an IIP3 of 5.3 dBm with a noise figure (NF) of 4.7 dB and a voltage conversion gain of 23.1 dB. The front-end with one-tuned inductor has an IIP3 of 3.4 dBm with an NF of 4.4 dB and a voltage conversion gain of 24.5 dB. There is a power consumption of 9.2 mA from a 1.5 V supply.
| Original language | English |
|---|---|
| Pages (from-to) | 882-888 |
| Number of pages | 7 |
| Journal | Microelectronics Journal |
| Volume | 41 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - 2010 Dec 1 |
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Keywords
- Derivative superposition method
- Front-end
- Linearization
- LNA
- Mixer
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Surfaces, Coatings and Films
- Condensed Matter Physics
- Atomic and Molecular Physics, and Optics
Cite this
A highly linear receiver front-end employing modified derivative superposition method with tuned inductors for 5.25 GHz. / Ahn, Youngbin; Park, Chiwan; Lee, Jae Hoon; Jeong, Jichai.
In: Microelectronics Journal, Vol. 41, No. 12, 01.12.2010, p. 882-888.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - A highly linear receiver front-end employing modified derivative superposition method with tuned inductors for 5.25 GHz
AU - Ahn, Youngbin
AU - Park, Chiwan
AU - Lee, Jae Hoon
AU - Jeong, Jichai
PY - 2010/12/1
Y1 - 2010/12/1
N2 - We design a highly linear CMOS RF receiver front-end operating in the 5 GHz band using the modified derivative superposition (DS) method with one- or two-tuned inductors in the low noise amplifier (LNA) and mixer. This method can be used to adjust the magnitude and phase of the third-order currents at output, and thus ensure that they cancel each other out. We characterize the two front-ends by the third-order input intercept point (IIP3), voltage conversion gain, and a noise figure based on the TSMC 0.18 μm RF CMOS process. Our simulation results suggest that the front-end with one-tuned inductor in the mixer supports linearization with the DS method, which only sacrifices 1.9 dB of IIP3 while the other performance parameters are improved. Furthermore, the front-end with two-tuned inductors requires a precise optimum design point, because it has to adjust two inductances simultaneously for optimization. If the inductances have deviated from the optimum design point, the front-end with two-tuned inductors has worse IIP3 characteristic than the front-end with one-tuned inductor. With two-tuned inductors, the front-end has an IIP3 of 5.3 dBm with a noise figure (NF) of 4.7 dB and a voltage conversion gain of 23.1 dB. The front-end with one-tuned inductor has an IIP3 of 3.4 dBm with an NF of 4.4 dB and a voltage conversion gain of 24.5 dB. There is a power consumption of 9.2 mA from a 1.5 V supply.
AB - We design a highly linear CMOS RF receiver front-end operating in the 5 GHz band using the modified derivative superposition (DS) method with one- or two-tuned inductors in the low noise amplifier (LNA) and mixer. This method can be used to adjust the magnitude and phase of the third-order currents at output, and thus ensure that they cancel each other out. We characterize the two front-ends by the third-order input intercept point (IIP3), voltage conversion gain, and a noise figure based on the TSMC 0.18 μm RF CMOS process. Our simulation results suggest that the front-end with one-tuned inductor in the mixer supports linearization with the DS method, which only sacrifices 1.9 dB of IIP3 while the other performance parameters are improved. Furthermore, the front-end with two-tuned inductors requires a precise optimum design point, because it has to adjust two inductances simultaneously for optimization. If the inductances have deviated from the optimum design point, the front-end with two-tuned inductors has worse IIP3 characteristic than the front-end with one-tuned inductor. With two-tuned inductors, the front-end has an IIP3 of 5.3 dBm with a noise figure (NF) of 4.7 dB and a voltage conversion gain of 23.1 dB. The front-end with one-tuned inductor has an IIP3 of 3.4 dBm with an NF of 4.4 dB and a voltage conversion gain of 24.5 dB. There is a power consumption of 9.2 mA from a 1.5 V supply.
KW - Derivative superposition method
KW - Front-end
KW - Linearization
KW - LNA
KW - Mixer
UR - http://www.scopus.com/inward/record.url?scp=78649331808&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=78649331808&partnerID=8YFLogxK
U2 - 10.1016/j.mejo.2010.07.015
DO - 10.1016/j.mejo.2010.07.015
M3 - Article
AN - SCOPUS:78649331808
VL - 41
SP - 882
EP - 888
JO - Microelectronics Journal
JF - Microelectronics Journal
SN - 0959-8324
IS - 12
ER -