A highly reliable multi-cell antifuse scheme using DRAM cell capacitors

Jong Pil Son, Jin Ho Kim, Woo Song Ahn, Seung Uk Han, Byung Sick Moon, Churoo Park, Hong Sun Hwang, Seong Jin Jang, Joo Sun Choi, Young Hyun Jun, Soo Won Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

A highly reliable antifuse cell and its sensing scheme that can be actually adopted in DRAM are presented. A multi-cell structure is newly devised to circumvent the large process variation problems of the DRAM cell capacitor type antifuse system. The programming current is less than 564μA up to the nine-cell case. The experimental results show that the cumulative distribution of the successful rupture in multi-cell structure is dramatically enhanced to be less than 15% of single-cell's case and the recovery problem of the programmed cell after the thermal stress (300°C) is disappeared. In addition, also presented is a Post-Package Repair (PPR) scheme that is directly coupled to external power using additional pin for the requisite high voltage with protection circuits, saving the chip area otherwise consumed by the internal pump circuitry. A 1Gbit DDR SDRAM is fabricated using Samsung's advanced 50nm DRAM process technology, successfully showing the feasibility of the proposed antifuse system implemented in it.

Original languageEnglish
Title of host publicationESSCIRC 2010 - 36th European Solid State Circuits Conference
Pages482-485
Number of pages4
DOIs
Publication statusPublished - 2010
Event36th European Solid State Circuits Conference, ESSCIRC 2010 - Sevilla, Spain
Duration: 2010 Sep 142010 Sep 16

Publication series

NameESSCIRC 2010 - 36th European Solid State Circuits Conference

Other

Other36th European Solid State Circuits Conference, ESSCIRC 2010
Country/TerritorySpain
CitySevilla
Period10/9/1410/9/16

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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