A Ka-band 3-bit RF MEMS true-time-delay network

Jonathan B. Hacker, Robert E. Mihailovich, Moonil Kim, Jeffrey F. DeNatale

Research output: Contribution to journalArticle

59 Citations (Scopus)

Abstract

A monolithic Ka-band true-time-delay (TTD) switched-line network containing 12 metal-to-metal contact RF microelectromechanical system switches has been successfully fabricated and characterized on a 75-μm-thick GaAs substrate. The compact 9.1-mm2 TTD network was designed to produce flat delay time over a dc-to-40-GHz bandwidth with full 360° phase control at 45° intervals at 35 GHz. Measurements show a match to within 2% to the designed delay times at 35 GHz for all eight switch states with 2.2-dB average insertion loss over all states. Peak rms phase error is 2.28° and peak rms amplitude error is 0.28 dB from dc to 40 GHz. Return loss better than 15 dB from dc to 40 GHz for all eight states confirms the circuit's broad-band operation.

Original languageEnglish
Pages (from-to)305-308
Number of pages4
JournalIEEE Transactions on Microwave Theory and Techniques
Volume51
Issue number1 II
DOIs
Publication statusPublished - 2003 Jan 1

Fingerprint

microelectromechanical systems
MEMS
Time delay
time lag
Switches
Phase control
phase control
phase error
Insertion losses
Metals
insertion loss
metals
electric contacts
switches
broadband
bandwidth
intervals
Bandwidth
Networks (circuits)
Substrates

Keywords

  • Phase shifter
  • Radar antennas
  • RF microelectromechanical systems (MEMS) devices
  • True-time delay (TTD)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

A Ka-band 3-bit RF MEMS true-time-delay network. / Hacker, Jonathan B.; Mihailovich, Robert E.; Kim, Moonil; DeNatale, Jeffrey F.

In: IEEE Transactions on Microwave Theory and Techniques, Vol. 51, No. 1 II, 01.01.2003, p. 305-308.

Research output: Contribution to journalArticle

Hacker, Jonathan B. ; Mihailovich, Robert E. ; Kim, Moonil ; DeNatale, Jeffrey F. / A Ka-band 3-bit RF MEMS true-time-delay network. In: IEEE Transactions on Microwave Theory and Techniques. 2003 ; Vol. 51, No. 1 II. pp. 305-308.
@article{87c69cfff9b54a02930565ff9139f07e,
title = "A Ka-band 3-bit RF MEMS true-time-delay network",
abstract = "A monolithic Ka-band true-time-delay (TTD) switched-line network containing 12 metal-to-metal contact RF microelectromechanical system switches has been successfully fabricated and characterized on a 75-μm-thick GaAs substrate. The compact 9.1-mm2 TTD network was designed to produce flat delay time over a dc-to-40-GHz bandwidth with full 360° phase control at 45° intervals at 35 GHz. Measurements show a match to within 2{\%} to the designed delay times at 35 GHz for all eight switch states with 2.2-dB average insertion loss over all states. Peak rms phase error is 2.28° and peak rms amplitude error is 0.28 dB from dc to 40 GHz. Return loss better than 15 dB from dc to 40 GHz for all eight states confirms the circuit's broad-band operation.",
keywords = "Phase shifter, Radar antennas, RF microelectromechanical systems (MEMS) devices, True-time delay (TTD)",
author = "Hacker, {Jonathan B.} and Mihailovich, {Robert E.} and Moonil Kim and DeNatale, {Jeffrey F.}",
year = "2003",
month = "1",
day = "1",
doi = "10.1109/TMTT.2002.806508",
language = "English",
volume = "51",
pages = "305--308",
journal = "IEEE Transactions on Microwave Theory and Techniques",
issn = "0018-9480",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "1 II",

}

TY - JOUR

T1 - A Ka-band 3-bit RF MEMS true-time-delay network

AU - Hacker, Jonathan B.

AU - Mihailovich, Robert E.

AU - Kim, Moonil

AU - DeNatale, Jeffrey F.

PY - 2003/1/1

Y1 - 2003/1/1

N2 - A monolithic Ka-band true-time-delay (TTD) switched-line network containing 12 metal-to-metal contact RF microelectromechanical system switches has been successfully fabricated and characterized on a 75-μm-thick GaAs substrate. The compact 9.1-mm2 TTD network was designed to produce flat delay time over a dc-to-40-GHz bandwidth with full 360° phase control at 45° intervals at 35 GHz. Measurements show a match to within 2% to the designed delay times at 35 GHz for all eight switch states with 2.2-dB average insertion loss over all states. Peak rms phase error is 2.28° and peak rms amplitude error is 0.28 dB from dc to 40 GHz. Return loss better than 15 dB from dc to 40 GHz for all eight states confirms the circuit's broad-band operation.

AB - A monolithic Ka-band true-time-delay (TTD) switched-line network containing 12 metal-to-metal contact RF microelectromechanical system switches has been successfully fabricated and characterized on a 75-μm-thick GaAs substrate. The compact 9.1-mm2 TTD network was designed to produce flat delay time over a dc-to-40-GHz bandwidth with full 360° phase control at 45° intervals at 35 GHz. Measurements show a match to within 2% to the designed delay times at 35 GHz for all eight switch states with 2.2-dB average insertion loss over all states. Peak rms phase error is 2.28° and peak rms amplitude error is 0.28 dB from dc to 40 GHz. Return loss better than 15 dB from dc to 40 GHz for all eight states confirms the circuit's broad-band operation.

KW - Phase shifter

KW - Radar antennas

KW - RF microelectromechanical systems (MEMS) devices

KW - True-time delay (TTD)

UR - http://www.scopus.com/inward/record.url?scp=0037252953&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037252953&partnerID=8YFLogxK

U2 - 10.1109/TMTT.2002.806508

DO - 10.1109/TMTT.2002.806508

M3 - Article

VL - 51

SP - 305

EP - 308

JO - IEEE Transactions on Microwave Theory and Techniques

JF - IEEE Transactions on Microwave Theory and Techniques

SN - 0018-9480

IS - 1 II

ER -