A ku-band gaas multifunction transmitter and receiver chipset

Hyunkyu Lee, Younghwan Kim, Iljin Lee, Dongkyo Kim, Kwangwon Park, Sanggeun Jeon

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


This paper presents a Ku-band monolithic multifunction transmitter and receiver chipset fabricated in 0.25-µm GaAs pseudomorphic high-electron mobility transistor technology. The chipset achieves a high level of integration, including a 4-bit 360 digital phase shifter, 5-bit 15.5-dB digital attenuator, amplifier and 9-bit digital serial-to-parallel converter for digital circuit control. Since the multifunction chipset includes a medium power amplifier and a low-noise amplifier, it features high P1dB and low noise figures over the full Ku-band frequencies. The multifunction transmitter shows a peak gain of 16.5 dB with output P1dB of 19.2 dBm at 15 GHz. The multifunction receiver shows a peak gain of 17.3 dB with noise figure of 2.5 dB at 15 GHz. The attenuation range is 15.5 dB with a step of 0.5 dB and the phase shift range is 360 with a step of 22.5. Each chip area of the transmitter and receiver is 4.2 × 2.8 mm2.

Original languageEnglish
Article number1327
Pages (from-to)1-16
Number of pages16
JournalElectronics (Switzerland)
Issue number8
Publication statusPublished - 2020 Aug


  • Attenuator
  • Low-noise amplifier
  • Medium power amplifier
  • Multifunction
  • Phase shifter
  • Receiver
  • Serial-to-parallel converter
  • Transmitter

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Signal Processing
  • Hardware and Architecture
  • Computer Networks and Communications
  • Electrical and Electronic Engineering


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