A latch-up immunized lateral trench insulated gate bipolar transistor with a p+ diverter structure for smart power integrated circuit

E. G. Kang, S. Y. Moon, Man Young Sung

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

A new lateral trench insulated gate bipolar transistor (LTIGBT) with a p+ diverter was proposed to improve the characteristics of the conventional LTIGBT. The p+ diverter layer was placed between the anode electrode and the cathode electrode. As the conventional LTIGBT has a p+ divert region, the forward blocking voltage was decreased significantly because the n-drift layer corresponding to the punch-through region was reduced. However, the forward blocking voltage of the proposed LTIGBT with a p+ diverter was about 140 V. That of the conventional LTIGBT of the same size was 105 V. Because the p+ diverter region of the proposed device was enclosed in a trench oxide layer, the electric field moved toward the trench-oxide layer, and punch-through breakdown of LTIGBT with p+ diverter occurred late. Therefore, the p+ diverter of the proposed LTIGBT had no effect on the breakdown voltage unlike the conventional LTIGBT. The latch-up current densities of the conventional LTIGBT and LTIGBT with a p+ diverter were 540 A/cm2, and 1453 A/cm2, respectively. The enhanced latch-up capability of the proposed LTIGBT with a p+ diverter was obtained due to the holes in the current directly reaching the cathode via the p+ divert region and p+ cathode layer beneath the n+ cathode layer.

Original languageEnglish
Pages (from-to)5267-5270
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume40
Issue number9 A
Publication statusPublished - 2001 Sep 1

Fingerprint

Power integrated circuits
latch-up
Insulated gate bipolar transistors (IGBT)
bipolar transistors
integrated circuits
Cathodes
cathodes
punches
Electrodes
Oxides
electrodes
oxides
Electric potential
electric potential
Electric breakdown
electrical faults
Anodes

Keywords

  • Forward blocking voltage
  • Latch-up
  • p+ divert structure
  • Power integrated circuit
  • Turn-off

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

@article{6e279972dc9a443696bc9df8005ff132,
title = "A latch-up immunized lateral trench insulated gate bipolar transistor with a p+ diverter structure for smart power integrated circuit",
abstract = "A new lateral trench insulated gate bipolar transistor (LTIGBT) with a p+ diverter was proposed to improve the characteristics of the conventional LTIGBT. The p+ diverter layer was placed between the anode electrode and the cathode electrode. As the conventional LTIGBT has a p+ divert region, the forward blocking voltage was decreased significantly because the n-drift layer corresponding to the punch-through region was reduced. However, the forward blocking voltage of the proposed LTIGBT with a p+ diverter was about 140 V. That of the conventional LTIGBT of the same size was 105 V. Because the p+ diverter region of the proposed device was enclosed in a trench oxide layer, the electric field moved toward the trench-oxide layer, and punch-through breakdown of LTIGBT with p+ diverter occurred late. Therefore, the p+ diverter of the proposed LTIGBT had no effect on the breakdown voltage unlike the conventional LTIGBT. The latch-up current densities of the conventional LTIGBT and LTIGBT with a p+ diverter were 540 A/cm2, and 1453 A/cm2, respectively. The enhanced latch-up capability of the proposed LTIGBT with a p+ diverter was obtained due to the holes in the current directly reaching the cathode via the p+ divert region and p+ cathode layer beneath the n+ cathode layer.",
keywords = "Forward blocking voltage, Latch-up, p+ divert structure, Power integrated circuit, Turn-off",
author = "Kang, {E. G.} and Moon, {S. Y.} and Sung, {Man Young}",
year = "2001",
month = "9",
day = "1",
language = "English",
volume = "40",
pages = "5267--5270",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "9 A",

}

TY - JOUR

T1 - A latch-up immunized lateral trench insulated gate bipolar transistor with a p+ diverter structure for smart power integrated circuit

AU - Kang, E. G.

AU - Moon, S. Y.

AU - Sung, Man Young

PY - 2001/9/1

Y1 - 2001/9/1

N2 - A new lateral trench insulated gate bipolar transistor (LTIGBT) with a p+ diverter was proposed to improve the characteristics of the conventional LTIGBT. The p+ diverter layer was placed between the anode electrode and the cathode electrode. As the conventional LTIGBT has a p+ divert region, the forward blocking voltage was decreased significantly because the n-drift layer corresponding to the punch-through region was reduced. However, the forward blocking voltage of the proposed LTIGBT with a p+ diverter was about 140 V. That of the conventional LTIGBT of the same size was 105 V. Because the p+ diverter region of the proposed device was enclosed in a trench oxide layer, the electric field moved toward the trench-oxide layer, and punch-through breakdown of LTIGBT with p+ diverter occurred late. Therefore, the p+ diverter of the proposed LTIGBT had no effect on the breakdown voltage unlike the conventional LTIGBT. The latch-up current densities of the conventional LTIGBT and LTIGBT with a p+ diverter were 540 A/cm2, and 1453 A/cm2, respectively. The enhanced latch-up capability of the proposed LTIGBT with a p+ diverter was obtained due to the holes in the current directly reaching the cathode via the p+ divert region and p+ cathode layer beneath the n+ cathode layer.

AB - A new lateral trench insulated gate bipolar transistor (LTIGBT) with a p+ diverter was proposed to improve the characteristics of the conventional LTIGBT. The p+ diverter layer was placed between the anode electrode and the cathode electrode. As the conventional LTIGBT has a p+ divert region, the forward blocking voltage was decreased significantly because the n-drift layer corresponding to the punch-through region was reduced. However, the forward blocking voltage of the proposed LTIGBT with a p+ diverter was about 140 V. That of the conventional LTIGBT of the same size was 105 V. Because the p+ diverter region of the proposed device was enclosed in a trench oxide layer, the electric field moved toward the trench-oxide layer, and punch-through breakdown of LTIGBT with p+ diverter occurred late. Therefore, the p+ diverter of the proposed LTIGBT had no effect on the breakdown voltage unlike the conventional LTIGBT. The latch-up current densities of the conventional LTIGBT and LTIGBT with a p+ diverter were 540 A/cm2, and 1453 A/cm2, respectively. The enhanced latch-up capability of the proposed LTIGBT with a p+ diverter was obtained due to the holes in the current directly reaching the cathode via the p+ divert region and p+ cathode layer beneath the n+ cathode layer.

KW - Forward blocking voltage

KW - Latch-up

KW - p+ divert structure

KW - Power integrated circuit

KW - Turn-off

UR - http://www.scopus.com/inward/record.url?scp=0035456602&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035456602&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0035456602

VL - 40

SP - 5267

EP - 5270

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 9 A

ER -