A latch-up immunized lateral trench insulated gate bipolar transistor with a p+ diverter structure for smart power integrated circuit

Physics & Astronomy

• latch-up 100%
• bipolar transistors 69%
• integrated circuits 61%
• cathodes 18%
• punches 14%
• oxides 7%
• electrodes 7%
• electric potential 6%
• electrical faults 5%
• anodes 5%

Engineering & Materials Science

• Power integrated circuits 97%
• Insulated gate bipolar transistors (IGBT) 70%
• Cathodes 23%
• Oxides 10%
• Electrodes 8%
• Electric breakdown 6%
• Electric potential 6%
• Current density 5%
• Anodes 5%
• Electric fields 5%