A look into the future for SiGe HBTs

D. L. Harame; G. Freeman; Jae-Sung Rieh; B. Jagannathan; D. Greenberg; A. Joseph; J. Johnson; F. Guarin; Z. Yang; D. Ahlgren; P. Cottrell; J. Dunn; B. Orner; S. Subbanna

doi:10.1109/ISCS.2003.1239978

A look into the future for SiGe HBTs

D. L. Harame, G. Freeman, Jae-Sung Rieh, B. Jagannathan, D. Greenberg, A. Joseph, J. Johnson, F. Guarin, Z. Yang, D. Ahlgren, P. Cottrell, J. Dunn, B. Orner, S. Subbanna

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

In this paper, we focus on the reliability of SiGe HBTs related to scaling. HBT performance will continues to increase with no forceable significant reliability roadblocks. Designers will need to pay attention to the configuration and use conditions of the transistor.

Original language	English
Title of host publication	IEEE International Symposium on Compound Semiconductors, Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	207-208
Number of pages	2
Volume	2003-January
ISBN (Print)	0780378202
DOIs	https://doi.org/10.1109/ISCS.2003.1239978
Publication status	Published - 2003
Externally published	Yes
Event	2003 International Symposium on Compound Semiconductors, ISCS 2003 - San Diego, United States Duration: 2003 Aug 25 → 2003 Aug 27

Other

Other	2003 International Symposium on Compound Semiconductors, ISCS 2003
Country	United States
City	San Diego
Period	03/8/25 → 03/8/27

Keywords

Current density
Degradation
Electromigration
Germanium silicon alloys
Heating
Heterojunction bipolar transistors
Impact ionization
Rivers
Silicon germanium
Thermal resistance

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/ISCS.2003.1239978

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Cite this

Harame, D. L., Freeman, G., Rieh, J-S., Jagannathan, B., Greenberg, D., Joseph, A., Johnson, J., Guarin, F., Yang, Z., Ahlgren, D., Cottrell, P., Dunn, J., Orner, B., & Subbanna, S. (2003). A look into the future for SiGe HBTs. In IEEE International Symposium on Compound Semiconductors, Proceedings (Vol. 2003-January, pp. 207-208). [1239978] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISCS.2003.1239978

A look into the future for SiGe HBTs. / Harame, D. L.; Freeman, G.; Rieh, Jae-Sung; Jagannathan, B.; Greenberg, D.; Joseph, A.; Johnson, J.; Guarin, F.; Yang, Z.; Ahlgren, D.; Cottrell, P.; Dunn, J.; Orner, B.; Subbanna, S.

IEEE International Symposium on Compound Semiconductors, Proceedings. Vol. 2003-January Institute of Electrical and Electronics Engineers Inc., 2003. p. 207-208 1239978.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Harame, DL, Freeman, G, Rieh, J-S, Jagannathan, B, Greenberg, D, Joseph, A, Johnson, J, Guarin, F, Yang, Z, Ahlgren, D, Cottrell, P, Dunn, J, Orner, B & Subbanna, S 2003, A look into the future for SiGe HBTs. in IEEE International Symposium on Compound Semiconductors, Proceedings. vol. 2003-January, 1239978, Institute of Electrical and Electronics Engineers Inc., pp. 207-208, 2003 International Symposium on Compound Semiconductors, ISCS 2003, San Diego, United States, 03/8/25. https://doi.org/10.1109/ISCS.2003.1239978

Harame, D. L. ; Freeman, G. ; Rieh, Jae-Sung ; Jagannathan, B. ; Greenberg, D. ; Joseph, A. ; Johnson, J. ; Guarin, F. ; Yang, Z. ; Ahlgren, D. ; Cottrell, P. ; Dunn, J. ; Orner, B. ; Subbanna, S. / A look into the future for SiGe HBTs. IEEE International Symposium on Compound Semiconductors, Proceedings. Vol. 2003-January Institute of Electrical and Electronics Engineers Inc., 2003. pp. 207-208

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abstract = "In this paper, we focus on the reliability of SiGe HBTs related to scaling. HBT performance will continues to increase with no forceable significant reliability roadblocks. Designers will need to pay attention to the configuration and use conditions of the transistor.",

keywords = "Current density, Degradation, Electromigration, Germanium silicon alloys, Heating, Heterojunction bipolar transistors, Impact ionization, Rivers, Silicon germanium, Thermal resistance",

author = "Harame, {D. L.} and G. Freeman and Jae-Sung Rieh and B. Jagannathan and D. Greenberg and A. Joseph and J. Johnson and F. Guarin and Z. Yang and D. Ahlgren and P. Cottrell and J. Dunn and B. Orner and S. Subbanna",

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AU - Freeman, G.

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AU - Greenberg, D.

AU - Joseph, A.

AU - Johnson, J.

AU - Guarin, F.

AU - Yang, Z.

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AU - Cottrell, P.

AU - Dunn, J.

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AB - In this paper, we focus on the reliability of SiGe HBTs related to scaling. HBT performance will continues to increase with no forceable significant reliability roadblocks. Designers will need to pay attention to the configuration and use conditions of the transistor.

KW - Current density

KW - Degradation

KW - Electromigration

KW - Germanium silicon alloys

KW - Heating

KW - Heterojunction bipolar transistors

KW - Impact ionization

KW - Rivers

KW - Silicon germanium

KW - Thermal resistance

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