Abstract
In this paper, we focus on the reliability of SiGe HBTs related to scaling. HBT performance will continues to increase with no forceable significant reliability roadblocks. Designers will need to pay attention to the configuration and use conditions of the transistor.
| Original language | English |
|---|---|
| Title of host publication | IEEE International Symposium on Compound Semiconductors, Proceedings |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 207-208 |
| Number of pages | 2 |
| Volume | 2003-January |
| ISBN (Print) | 0780378202 |
| DOIs | |
| Publication status | Published - 2003 |
| Externally published | Yes |
| Event | 2003 International Symposium on Compound Semiconductors, ISCS 2003 - San Diego, United States Duration: 2003 Aug 25 → 2003 Aug 27 |
Other
| Other | 2003 International Symposium on Compound Semiconductors, ISCS 2003 |
|---|---|
| Country | United States |
| City | San Diego |
| Period | 03/8/25 → 03/8/27 |
Fingerprint
Keywords
- Current density
- Degradation
- Electromigration
- Germanium silicon alloys
- Heating
- Heterojunction bipolar transistors
- Impact ionization
- Rivers
- Silicon germanium
- Thermal resistance
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
Cite this
A look into the future for SiGe HBTs. / Harame, D. L.; Freeman, G.; Rieh, Jae-Sung; Jagannathan, B.; Greenberg, D.; Joseph, A.; Johnson, J.; Guarin, F.; Yang, Z.; Ahlgren, D.; Cottrell, P.; Dunn, J.; Orner, B.; Subbanna, S.
IEEE International Symposium on Compound Semiconductors, Proceedings. Vol. 2003-January Institute of Electrical and Electronics Engineers Inc., 2003. p. 207-208 1239978.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - A look into the future for SiGe HBTs
AU - Harame, D. L.
AU - Freeman, G.
AU - Rieh, Jae-Sung
AU - Jagannathan, B.
AU - Greenberg, D.
AU - Joseph, A.
AU - Johnson, J.
AU - Guarin, F.
AU - Yang, Z.
AU - Ahlgren, D.
AU - Cottrell, P.
AU - Dunn, J.
AU - Orner, B.
AU - Subbanna, S.
PY - 2003
Y1 - 2003
N2 - In this paper, we focus on the reliability of SiGe HBTs related to scaling. HBT performance will continues to increase with no forceable significant reliability roadblocks. Designers will need to pay attention to the configuration and use conditions of the transistor.
AB - In this paper, we focus on the reliability of SiGe HBTs related to scaling. HBT performance will continues to increase with no forceable significant reliability roadblocks. Designers will need to pay attention to the configuration and use conditions of the transistor.
KW - Current density
KW - Degradation
KW - Electromigration
KW - Germanium silicon alloys
KW - Heating
KW - Heterojunction bipolar transistors
KW - Impact ionization
KW - Rivers
KW - Silicon germanium
KW - Thermal resistance
UR - http://www.scopus.com/inward/record.url?scp=84943535490&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84943535490&partnerID=8YFLogxK
U2 - 10.1109/ISCS.2003.1239978
DO - 10.1109/ISCS.2003.1239978
M3 - Conference contribution
AN - SCOPUS:84943535490
SN - 0780378202
VL - 2003-January
SP - 207
EP - 208
BT - IEEE International Symposium on Compound Semiconductors, Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
ER -