A look into the future for SiGe HBTs

D. L. Harame, G. Freeman, Jae-Sung Rieh, B. Jagannathan, D. Greenberg, A. Joseph, J. Johnson, F. Guarin, Z. Yang, D. Ahlgren, P. Cottrell, J. Dunn, B. Orner, S. Subbanna

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, we focus on the reliability of SiGe HBTs related to scaling. HBT performance will continues to increase with no forceable significant reliability roadblocks. Designers will need to pay attention to the configuration and use conditions of the transistor.

Original languageEnglish
Title of host publicationIEEE International Symposium on Compound Semiconductors, Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages207-208
Number of pages2
Volume2003-January
ISBN (Print)0780378202
DOIs
Publication statusPublished - 2003
Externally publishedYes
Event2003 International Symposium on Compound Semiconductors, ISCS 2003 - San Diego, United States
Duration: 2003 Aug 252003 Aug 27

Other

Other2003 International Symposium on Compound Semiconductors, ISCS 2003
CountryUnited States
CitySan Diego
Period03/8/2503/8/27

Fingerprint

Heterojunction bipolar transistors
Transistors

Keywords

  • Current density
  • Degradation
  • Electromigration
  • Germanium silicon alloys
  • Heating
  • Heterojunction bipolar transistors
  • Impact ionization
  • Rivers
  • Silicon germanium
  • Thermal resistance

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Harame, D. L., Freeman, G., Rieh, J-S., Jagannathan, B., Greenberg, D., Joseph, A., ... Subbanna, S. (2003). A look into the future for SiGe HBTs. In IEEE International Symposium on Compound Semiconductors, Proceedings (Vol. 2003-January, pp. 207-208). [1239978] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISCS.2003.1239978

A look into the future for SiGe HBTs. / Harame, D. L.; Freeman, G.; Rieh, Jae-Sung; Jagannathan, B.; Greenberg, D.; Joseph, A.; Johnson, J.; Guarin, F.; Yang, Z.; Ahlgren, D.; Cottrell, P.; Dunn, J.; Orner, B.; Subbanna, S.

IEEE International Symposium on Compound Semiconductors, Proceedings. Vol. 2003-January Institute of Electrical and Electronics Engineers Inc., 2003. p. 207-208 1239978.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Harame, DL, Freeman, G, Rieh, J-S, Jagannathan, B, Greenberg, D, Joseph, A, Johnson, J, Guarin, F, Yang, Z, Ahlgren, D, Cottrell, P, Dunn, J, Orner, B & Subbanna, S 2003, A look into the future for SiGe HBTs. in IEEE International Symposium on Compound Semiconductors, Proceedings. vol. 2003-January, 1239978, Institute of Electrical and Electronics Engineers Inc., pp. 207-208, 2003 International Symposium on Compound Semiconductors, ISCS 2003, San Diego, United States, 03/8/25. https://doi.org/10.1109/ISCS.2003.1239978
Harame DL, Freeman G, Rieh J-S, Jagannathan B, Greenberg D, Joseph A et al. A look into the future for SiGe HBTs. In IEEE International Symposium on Compound Semiconductors, Proceedings. Vol. 2003-January. Institute of Electrical and Electronics Engineers Inc. 2003. p. 207-208. 1239978 https://doi.org/10.1109/ISCS.2003.1239978
Harame, D. L. ; Freeman, G. ; Rieh, Jae-Sung ; Jagannathan, B. ; Greenberg, D. ; Joseph, A. ; Johnson, J. ; Guarin, F. ; Yang, Z. ; Ahlgren, D. ; Cottrell, P. ; Dunn, J. ; Orner, B. ; Subbanna, S. / A look into the future for SiGe HBTs. IEEE International Symposium on Compound Semiconductors, Proceedings. Vol. 2003-January Institute of Electrical and Electronics Engineers Inc., 2003. pp. 207-208
@inproceedings{256e0086093b43748fe766b934851eb3,
title = "A look into the future for SiGe HBTs",
abstract = "In this paper, we focus on the reliability of SiGe HBTs related to scaling. HBT performance will continues to increase with no forceable significant reliability roadblocks. Designers will need to pay attention to the configuration and use conditions of the transistor.",
keywords = "Current density, Degradation, Electromigration, Germanium silicon alloys, Heating, Heterojunction bipolar transistors, Impact ionization, Rivers, Silicon germanium, Thermal resistance",
author = "Harame, {D. L.} and G. Freeman and Jae-Sung Rieh and B. Jagannathan and D. Greenberg and A. Joseph and J. Johnson and F. Guarin and Z. Yang and D. Ahlgren and P. Cottrell and J. Dunn and B. Orner and S. Subbanna",
year = "2003",
doi = "10.1109/ISCS.2003.1239978",
language = "English",
isbn = "0780378202",
volume = "2003-January",
pages = "207--208",
booktitle = "IEEE International Symposium on Compound Semiconductors, Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - GEN

T1 - A look into the future for SiGe HBTs

AU - Harame, D. L.

AU - Freeman, G.

AU - Rieh, Jae-Sung

AU - Jagannathan, B.

AU - Greenberg, D.

AU - Joseph, A.

AU - Johnson, J.

AU - Guarin, F.

AU - Yang, Z.

AU - Ahlgren, D.

AU - Cottrell, P.

AU - Dunn, J.

AU - Orner, B.

AU - Subbanna, S.

PY - 2003

Y1 - 2003

N2 - In this paper, we focus on the reliability of SiGe HBTs related to scaling. HBT performance will continues to increase with no forceable significant reliability roadblocks. Designers will need to pay attention to the configuration and use conditions of the transistor.

AB - In this paper, we focus on the reliability of SiGe HBTs related to scaling. HBT performance will continues to increase with no forceable significant reliability roadblocks. Designers will need to pay attention to the configuration and use conditions of the transistor.

KW - Current density

KW - Degradation

KW - Electromigration

KW - Germanium silicon alloys

KW - Heating

KW - Heterojunction bipolar transistors

KW - Impact ionization

KW - Rivers

KW - Silicon germanium

KW - Thermal resistance

UR - http://www.scopus.com/inward/record.url?scp=84943535490&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84943535490&partnerID=8YFLogxK

U2 - 10.1109/ISCS.2003.1239978

DO - 10.1109/ISCS.2003.1239978

M3 - Conference contribution

AN - SCOPUS:84943535490

SN - 0780378202

VL - 2003-January

SP - 207

EP - 208

BT - IEEE International Symposium on Compound Semiconductors, Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

ER -