A look into the future for SiGe HBTs

D. L. Harame; G. Freeman; J. Rieh; B. Jagannathan; D. Greenberg; A. Joseph; J. Johnson; F. Guarin; Z. Yang; D. Ahlgren; P. Cottrell; J. Dunn; B. Orner; S. Subbanna

doi:10.1109/ISCS.2003.1239978

A look into the future for SiGe HBTs

D. L. Harame, G. Freeman, J. Rieh, B. Jagannathan, D. Greenberg, A. Joseph, J. Johnson, F. Guarin, Z. Yang, D. Ahlgren, P. Cottrell, J. Dunn, B. Orner, S. Subbanna

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

In this paper, we focus on the reliability of SiGe HBTs related to scaling. HBT performance will continues to increase with no forceable significant reliability roadblocks. Designers will need to pay attention to the configuration and use conditions of the transistor.

Original language	English
Title of host publication	2003 International Symposium on Compound Semiconductors, ISCS 2003
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	207-208
Number of pages	2
ISBN (Electronic)	0780378202
DOIs	https://doi.org/10.1109/ISCS.2003.1239978
Publication status	Published - 2003
Externally published	Yes
Event	2003 International Symposium on Compound Semiconductors, ISCS 2003 - San Diego, United States Duration: 2003 Aug 25 → 2003 Aug 27

Publication series

Name	IEEE International Symposium on Compound Semiconductors, Proceedings
Volume	2003-January

Other

Other	2003 International Symposium on Compound Semiconductors, ISCS 2003
Country/Territory	United States
City	San Diego
Period	03/8/25 → 03/8/27

Keywords

Current density
Degradation
Electromigration
Germanium silicon alloys
Heating
Heterojunction bipolar transistors
Impact ionization
Rivers
Silicon germanium
Thermal resistance

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/ISCS.2003.1239978

Cite this

Harame, D. L., Freeman, G., Rieh, J., Jagannathan, B., Greenberg, D., Joseph, A., Johnson, J., Guarin, F., Yang, Z., Ahlgren, D., Cottrell, P., Dunn, J., Orner, B., & Subbanna, S. (2003). A look into the future for SiGe HBTs. In 2003 International Symposium on Compound Semiconductors, ISCS 2003 (pp. 207-208). [1239978] (IEEE International Symposium on Compound Semiconductors, Proceedings; Vol. 2003-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISCS.2003.1239978

A look into the future for SiGe HBTs. / Harame, D. L.; Freeman, G.; Rieh, J. et al.

2003 International Symposium on Compound Semiconductors, ISCS 2003. Institute of Electrical and Electronics Engineers Inc., 2003. p. 207-208 1239978 (IEEE International Symposium on Compound Semiconductors, Proceedings; Vol. 2003-January).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Harame, DL, Freeman, G, Rieh, J, Jagannathan, B, Greenberg, D, Joseph, A, Johnson, J, Guarin, F, Yang, Z, Ahlgren, D, Cottrell, P, Dunn, J, Orner, B & Subbanna, S 2003, A look into the future for SiGe HBTs. in 2003 International Symposium on Compound Semiconductors, ISCS 2003., 1239978, IEEE International Symposium on Compound Semiconductors, Proceedings, vol. 2003-January, Institute of Electrical and Electronics Engineers Inc., pp. 207-208, 2003 International Symposium on Compound Semiconductors, ISCS 2003, San Diego, United States, 03/8/25. https://doi.org/10.1109/ISCS.2003.1239978

@inproceedings{256e0086093b43748fe766b934851eb3,

title = "A look into the future for SiGe HBTs",

abstract = "In this paper, we focus on the reliability of SiGe HBTs related to scaling. HBT performance will continues to increase with no forceable significant reliability roadblocks. Designers will need to pay attention to the configuration and use conditions of the transistor.",

keywords = "Current density, Degradation, Electromigration, Germanium silicon alloys, Heating, Heterojunction bipolar transistors, Impact ionization, Rivers, Silicon germanium, Thermal resistance",

author = "Harame, {D. L.} and G. Freeman and J. Rieh and B. Jagannathan and D. Greenberg and A. Joseph and J. Johnson and F. Guarin and Z. Yang and D. Ahlgren and P. Cottrell and J. Dunn and B. Orner and S. Subbanna",

note = "Publisher Copyright: {\textcopyright} 2003 IEEE.; 2003 International Symposium on Compound Semiconductors, ISCS 2003 ; Conference date: 25-08-2003 Through 27-08-2003",

year = "2003",

doi = "10.1109/ISCS.2003.1239978",

language = "English",

series = "IEEE International Symposium on Compound Semiconductors, Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "207--208",

booktitle = "2003 International Symposium on Compound Semiconductors, ISCS 2003",

}

TY - GEN

T1 - A look into the future for SiGe HBTs

AU - Harame, D. L.

AU - Freeman, G.

AU - Rieh, J.

AU - Jagannathan, B.

AU - Greenberg, D.

AU - Joseph, A.

AU - Johnson, J.

AU - Guarin, F.

AU - Yang, Z.

AU - Ahlgren, D.

AU - Cottrell, P.

AU - Dunn, J.

AU - Orner, B.

AU - Subbanna, S.

PY - 2003

Y1 - 2003

N2 - In this paper, we focus on the reliability of SiGe HBTs related to scaling. HBT performance will continues to increase with no forceable significant reliability roadblocks. Designers will need to pay attention to the configuration and use conditions of the transistor.

AB - In this paper, we focus on the reliability of SiGe HBTs related to scaling. HBT performance will continues to increase with no forceable significant reliability roadblocks. Designers will need to pay attention to the configuration and use conditions of the transistor.

KW - Current density

KW - Degradation

KW - Electromigration

KW - Germanium silicon alloys

KW - Heating

KW - Heterojunction bipolar transistors

KW - Impact ionization

KW - Rivers

KW - Silicon germanium

KW - Thermal resistance

UR - http://www.scopus.com/inward/record.url?scp=84943535490&partnerID=8YFLogxK

U2 - 10.1109/ISCS.2003.1239978

DO - 10.1109/ISCS.2003.1239978

M3 - Conference contribution

AN - SCOPUS:84943535490

T3 - IEEE International Symposium on Compound Semiconductors, Proceedings

SP - 207

EP - 208

BT - 2003 International Symposium on Compound Semiconductors, ISCS 2003

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2003 International Symposium on Compound Semiconductors, ISCS 2003

Y2 - 25 August 2003 through 27 August 2003

ER -

A look into the future for SiGe HBTs

Abstract

Publication series

Other

Keywords

ASJC Scopus subject areas

Access to Document

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