A look into the future for SiGe HBTs

D. L. Harame, G. Freeman, Jae-Sung Rieh, B. Jagannathan, D. Greenberg, A. Joseph, J. Johnson, F. Guarin, Z. Yang, D. Ahlgren, P. Cottrell, J. Dunn, B. Orner, S. Subbanna

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, we focus on the reliability of SiGe HBTs related to scaling. HBT performance will continues to increase with no forceable significant reliability roadblocks. Designers will need to pay attention to the configuration and use conditions of the transistor.

Original languageEnglish
Title of host publicationIEEE International Symposium on Compound Semiconductors, Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages207-208
Number of pages2
Volume2003-January
ISBN (Print)0780378202
DOIs
Publication statusPublished - 2003
Externally publishedYes
Event2003 International Symposium on Compound Semiconductors, ISCS 2003 - San Diego, United States
Duration: 2003 Aug 252003 Aug 27

Other

Other2003 International Symposium on Compound Semiconductors, ISCS 2003
CountryUnited States
CitySan Diego
Period03/8/2503/8/27

Keywords

  • Current density
  • Degradation
  • Electromigration
  • Germanium silicon alloys
  • Heating
  • Heterojunction bipolar transistors
  • Impact ionization
  • Rivers
  • Silicon germanium
  • Thermal resistance

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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  • Cite this

    Harame, D. L., Freeman, G., Rieh, J-S., Jagannathan, B., Greenberg, D., Joseph, A., Johnson, J., Guarin, F., Yang, Z., Ahlgren, D., Cottrell, P., Dunn, J., Orner, B., & Subbanna, S. (2003). A look into the future for SiGe HBTs. In IEEE International Symposium on Compound Semiconductors, Proceedings (Vol. 2003-January, pp. 207-208). [1239978] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISCS.2003.1239978