A micromachining technique for a thin silicon membrane using merged epitaxial lateral overgrowth of silicon and SiO2 for an etch-stop

James J. Pak, Abul E. Kabir, Gerold W. Neudeck, James H. Logsdon, David R. DeRoo, Steven E. Staller

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

A micromachining technology using merged epitaxial lateral overgrowth (MELO) of silicon, combined with SiO2 as an etch-stop, was developed. When epitaxial lateral overgrowth (ELO) silicon merges on top of SiO2 islands, it forms a local silicon-on-insulator (SOI) film which can be transformed into a thin silicon diaphragm needed for micromechanical sensors. The SiO2 islands then act as a near-perfect etch-stop during back etching due to its negligible etch rate in KOH- or ethylenediamine-based solution. This technique permits the formation of both transducers and transistor structures in the same film since it does not require a highly doped film for the etch-stop. The diaphragm thickness is controlled by the epitaxial silicon growth rate (≅0.1 μm/min) rather than by traditional etching techniques. A single-crystal silicon diaphragm 9 μm thick and 250 μm × 1000 μm was realized. Diodes fabricated in the MELO silicon showed characteristics similar to those in bulk silicon, including reverse bias leakage currents.

Original languageEnglish
Title of host publicationTransducers '91
Place of PublicationPiscataway, NJ, United States
PublisherPubl by IEEE
Pages1028-1031
Number of pages4
ISBN (Print)0879425857
Publication statusPublished - 1991 Dec 1
Event1991 International Conference on Solid-State Sensors and Actuators - San Francisco, CA, USA
Duration: 1991 Jun 241991 Jun 28

Other

Other1991 International Conference on Solid-State Sensors and Actuators
CitySan Francisco, CA, USA
Period91/6/2491/6/28

ASJC Scopus subject areas

  • Engineering(all)

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    Pak, J. J., Kabir, A. E., Neudeck, G. W., Logsdon, J. H., DeRoo, D. R., & Staller, S. E. (1991). A micromachining technique for a thin silicon membrane using merged epitaxial lateral overgrowth of silicon and SiO2 for an etch-stop. In Transducers '91 (pp. 1028-1031). Publ by IEEE.