A nanoscale PNPN self-controlled-switch FeRAM architecture

Hee Bok Kang, Young Jin Park, Jae Jin Lee, Jin Hong Ahn, Man Young Sung, Young Kwon Sung

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

A PNPN nanoscale diode is formed on a silicon-on-insulator (SOI) wafer and is composed of a serial PNPN chain layer with a nanoscale current channel area. The bottom electrode of the ferroelectric capacitor (FeCAP) is connected to a serial PNPN-nanoscale-diode chain, and the top electrode of FeCAP is connected to the wordline (WL). The bitline (BL) under the FeCAP is also connected to the serial PNPN-nanoscale-diode chain. The serial PNPN-nanoscale-diode chain layers of each nanoscale channel are separated by a dielectric insulator layer. The MEDICI-simulated PNPN-diode snap-back voltage properties are controlled by various process conditions. The leakage current shape of the reverse biased-PN diode is similar to the forward-biased current shape before the snap-back voltage region of the PNPN nanoscale diode.

Original languageEnglish
Pages (from-to)490-492
Number of pages3
JournalJournal of the Korean Physical Society
Volume45
Issue number2
Publication statusPublished - 2004 Aug

Keywords

  • FeRAM
  • PNPN nanoscale diode
  • Silicon-on-insulator
  • Snap-back voltage

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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  • Cite this

    Kang, H. B., Park, Y. J., Lee, J. J., Ahn, J. H., Sung, M. Y., & Sung, Y. K. (2004). A nanoscale PNPN self-controlled-switch FeRAM architecture. Journal of the Korean Physical Society, 45(2), 490-492.