A new CAD-compatible non-quasi-static MOS transient model is presented. Direct inclusion of depletion charge variation has been made by applying the collocation method for the model derivation. The new model accurately predicts transient currents in the cases including the cutoff region where the variation of the depletion charge is high. Furthermore, in the new model, no additional parameters other than the DC parameters are needed.
|Journal||Journal of the Korean Physical Society|
|Issue number||SUPPL. 2|
|Publication status||Published - 1998 Dec 1|
ASJC Scopus subject areas
- Physics and Astronomy(all)