A new CAD-compatible non-quasi-static MOS transient model with direct inclusion of depletion charge variations

D. H. Kwon, Y. S. Yu, K. H. Kim, Tae Woong Yoon, S. W. Hwang, D. H. Song, K. H. Lee

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

A new CAD-compatible non-quasi-static MOS transient model is presented. Direct inclusion of depletion charge variation has been made by applying the collocation method for the model derivation. The new model accurately predicts transient currents in the cases including the cutoff region where the variation of the depletion charge is high. Furthermore, in the new model, no additional parameters other than the DC parameters are needed.

Original languageEnglish
JournalJournal of the Korean Physical Society
Volume33
Issue numberSUPPL. 2
Publication statusPublished - 1998 Dec 1

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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