A new class of charge-trap flash memory with resistive switching mechanisms

Ho Myoung An, Eui Bok Lee, Hee Dong Kim, Yu Jeong Seo, Tae Geun Kim

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)

Abstract

This paper presents a new class of charge-trap Flash memory device with resistive switching mechanisms. We propose a fused memory scheme using a structure of metal/Pr0.7 Ca0.3MnO3 (PCMO)/nitride/oxide/silicon to graft fast-switching features of resistive random access memory onto high-density silicon/oxide/nitride/oxide/silicon memory structures. In this scheme, both program and erase (P/E) are performed by the conduction of the carriers that are injected from the gate into the nitride layer through the PCMO, which is a resistive switching material; the resistance state determines whether a program or erase function is performed. In the proposed memory devices, we observed improved memory characteristics, including the currentvoltage hysteresis having a resistive ratio exceeding three orders of magnitude at a set voltage of ± 4.5 V, a memory window of 2.3 V, a P/E speed of 100 ns/1 ms, data retention of ten years, and endurance of 10 5 P/E cycles. This approach will offer critical clues about how one can best implement universal features of nonvolatile memories in a single chip.

Original languageEnglish
Article number5551188
Pages (from-to)2398-2404
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume57
Issue number10
DOIs
Publication statusPublished - 2010 Oct

Keywords

  • Charge-trap Flash (CTF)
  • resistive random access memory (ReRAM)
  • resistive switching
  • silicon/oxide/nitride/oxide/silicon (SONOS)
  • universal memory

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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