Abstract
This paper presents a new class of charge-trap Flash memory device with resistive switching mechanisms. We propose a fused memory scheme using a structure of metal/Pr0.7 Ca0.3MnO3 (PCMO)/nitride/oxide/silicon to graft fast-switching features of resistive random access memory onto high-density silicon/oxide/nitride/oxide/silicon memory structures. In this scheme, both program and erase (P/E) are performed by the conduction of the carriers that are injected from the gate into the nitride layer through the PCMO, which is a resistive switching material; the resistance state determines whether a program or erase function is performed. In the proposed memory devices, we observed improved memory characteristics, including the currentvoltage hysteresis having a resistive ratio exceeding three orders of magnitude at a set voltage of ± 4.5 V, a memory window of 2.3 V, a P/E speed of 100 ns/1 ms, data retention of ten years, and endurance of 10 5 P/E cycles. This approach will offer critical clues about how one can best implement universal features of nonvolatile memories in a single chip.
Original language | English |
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Article number | 5551188 |
Pages (from-to) | 2398-2404 |
Number of pages | 7 |
Journal | IEEE Transactions on Electron Devices |
Volume | 57 |
Issue number | 10 |
DOIs | |
Publication status | Published - 2010 Oct |
Keywords
- Charge-trap Flash (CTF)
- resistive random access memory (ReRAM)
- resistive switching
- silicon/oxide/nitride/oxide/silicon (SONOS)
- universal memory
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering