A new edge termination technique to improve voltage blocking capability and reliability of field limiting ring for power devices

Yo Han Kim; Han Sin Lee; Sin Su Kyung; Young Mok Kim; Ey Goo Kang; Man Young Sung

doi:10.1109/ICICDT.2008.4567249

A new edge termination technique to improve voltage blocking capability and reliability of field limiting ring for power devices

Yo Han Kim, Han Sin Lee, Sin Su Kyung, Young Mok Kim, Ey Goo Kang, Man Young Sung

* Honorary professors

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

14 Citations (Scopus)

Abstract

A planar edge termination technique of trenched field limiting ring is investigated by using 2-dimensional numerical analysis and simulation. The better voltage blocking capability and reliability can be obtained by trenching the field-limiting ring site which would be implanted. The trench etch step makes the junction depth deeper so that junction curvature effect and surface breakdown are less happened. The numerical analyses reveal two facts that the trenched field limiting ring has smaller maximum electric field and the electric field peak is deeper from the substrate surface, hence silicon dioxide layer can be protected. Therefore the voltage blocking capability and reliability of the new structure can be improved. The simulated results for 1700V power devices by using TMA MEDICI show that the trenched field limiting ring can have smaller critical electric field and accomplish near 30% increase of breakdown voltage in comparison with the conventional structure. The proposed structure is more efficient to support voltage and more easy to gain the optimized design. Moreover, the fabrication of trenched field-limiting ring is relatively simple because the trench etch step uses the same mask of p+ field-ring implantation step. Extensive device simulations as well as qualitative analyses confirm these conclusions.

Original language	English
Title of host publication	Proceedings - 2008 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT
Pages	71-75
Number of pages	5
DOIs	https://doi.org/10.1109/ICICDT.2008.4567249
Publication status	Published - 2008
Event	IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2008 - Minatec Grenoble, France Duration: 2008 Jun 2 → 2008 Jun 4

Publication series

Name	Proceedings - 2008 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT

Other

Other	IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2008
Country/Territory	France
City	Minatec Grenoble
Period	08/6/2 → 08/6/4

Keywords

Edge termination
Field limiting ring
Power semiconductor
Trench etch

ASJC Scopus subject areas

Human-Computer Interaction
Electrical and Electronic Engineering

Access to Document

10.1109/ICICDT.2008.4567249

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Kim, Y. H., Lee, H. S., Kyung, S. S., Kim, Y. M., Kang, E. G., & Sung, M. Y. (2008). A new edge termination technique to improve voltage blocking capability and reliability of field limiting ring for power devices. In Proceedings - 2008 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT (pp. 71-75). [4567249] (Proceedings - 2008 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT). https://doi.org/10.1109/ICICDT.2008.4567249

A new edge termination technique to improve voltage blocking capability and reliability of field limiting ring for power devices. / Kim, Yo Han; Lee, Han Sin; Kyung, Sin Su et al.

Proceedings - 2008 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT. 2008. p. 71-75 4567249 (Proceedings - 2008 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kim, YH, Lee, HS, Kyung, SS, Kim, YM, Kang, EG & Sung, MY 2008, A new edge termination technique to improve voltage blocking capability and reliability of field limiting ring for power devices. in Proceedings - 2008 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT., 4567249, Proceedings - 2008 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT, pp. 71-75, IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2008, Minatec Grenoble, France, 08/6/2. https://doi.org/10.1109/ICICDT.2008.4567249

Kim YH, Lee HS, Kyung SS, Kim YM, Kang EG, Sung MY. A new edge termination technique to improve voltage blocking capability and reliability of field limiting ring for power devices. In Proceedings - 2008 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT. 2008. p. 71-75. 4567249. (Proceedings - 2008 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT). doi: 10.1109/ICICDT.2008.4567249

Kim, Yo Han ; Lee, Han Sin ; Kyung, Sin Su et al. / A new edge termination technique to improve voltage blocking capability and reliability of field limiting ring for power devices. Proceedings - 2008 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT. 2008. pp. 71-75 (Proceedings - 2008 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT).

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title = "A new edge termination technique to improve voltage blocking capability and reliability of field limiting ring for power devices",

abstract = "A planar edge termination technique of trenched field limiting ring is investigated by using 2-dimensional numerical analysis and simulation. The better voltage blocking capability and reliability can be obtained by trenching the field-limiting ring site which would be implanted. The trench etch step makes the junction depth deeper so that junction curvature effect and surface breakdown are less happened. The numerical analyses reveal two facts that the trenched field limiting ring has smaller maximum electric field and the electric field peak is deeper from the substrate surface, hence silicon dioxide layer can be protected. Therefore the voltage blocking capability and reliability of the new structure can be improved. The simulated results for 1700V power devices by using TMA MEDICI show that the trenched field limiting ring can have smaller critical electric field and accomplish near 30% increase of breakdown voltage in comparison with the conventional structure. The proposed structure is more efficient to support voltage and more easy to gain the optimized design. Moreover, the fabrication of trenched field-limiting ring is relatively simple because the trench etch step uses the same mask of p+ field-ring implantation step. Extensive device simulations as well as qualitative analyses confirm these conclusions.",

keywords = "Edge termination, Field limiting ring, Power semiconductor, Trench etch",

author = "Kim, {Yo Han} and Lee, {Han Sin} and Kyung, {Sin Su} and Kim, {Young Mok} and Kang, {Ey Goo} and Sung, {Man Young}",

year = "2008",

doi = "10.1109/ICICDT.2008.4567249",

language = "English",

isbn = "9781424418114",

series = "Proceedings - 2008 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT",

pages = "71--75",

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AU - Sung, Man Young

PY - 2008

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N2 - A planar edge termination technique of trenched field limiting ring is investigated by using 2-dimensional numerical analysis and simulation. The better voltage blocking capability and reliability can be obtained by trenching the field-limiting ring site which would be implanted. The trench etch step makes the junction depth deeper so that junction curvature effect and surface breakdown are less happened. The numerical analyses reveal two facts that the trenched field limiting ring has smaller maximum electric field and the electric field peak is deeper from the substrate surface, hence silicon dioxide layer can be protected. Therefore the voltage blocking capability and reliability of the new structure can be improved. The simulated results for 1700V power devices by using TMA MEDICI show that the trenched field limiting ring can have smaller critical electric field and accomplish near 30% increase of breakdown voltage in comparison with the conventional structure. The proposed structure is more efficient to support voltage and more easy to gain the optimized design. Moreover, the fabrication of trenched field-limiting ring is relatively simple because the trench etch step uses the same mask of p+ field-ring implantation step. Extensive device simulations as well as qualitative analyses confirm these conclusions.

AB - A planar edge termination technique of trenched field limiting ring is investigated by using 2-dimensional numerical analysis and simulation. The better voltage blocking capability and reliability can be obtained by trenching the field-limiting ring site which would be implanted. The trench etch step makes the junction depth deeper so that junction curvature effect and surface breakdown are less happened. The numerical analyses reveal two facts that the trenched field limiting ring has smaller maximum electric field and the electric field peak is deeper from the substrate surface, hence silicon dioxide layer can be protected. Therefore the voltage blocking capability and reliability of the new structure can be improved. The simulated results for 1700V power devices by using TMA MEDICI show that the trenched field limiting ring can have smaller critical electric field and accomplish near 30% increase of breakdown voltage in comparison with the conventional structure. The proposed structure is more efficient to support voltage and more easy to gain the optimized design. Moreover, the fabrication of trenched field-limiting ring is relatively simple because the trench etch step uses the same mask of p+ field-ring implantation step. Extensive device simulations as well as qualitative analyses confirm these conclusions.

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A new edge termination technique to improve voltage blocking capability and reliability of field limiting ring for power devices

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