A new EST with dual trench gate electrode (DTG-EST)

Dae Won Kim, Dae Jong Kim, Ey Goo Kang, Man Young Sung, Dong Hee Rhie

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, the new dual trench gate Emitter Switched Thyristor (DTG-EST) is proposed for improving snap-back effect which leads to a lot of serious problems of device applications. And the parasitic thyristor that is inherent in the conventional EST is completely eliminated in this structure, allowing higher maximum controllable current densities for ESTs. The conventional EST exhibits snap-back with the anode voltage and current density 2.73V and 35A/cm2, respectively. But the proposed DTG-EST exhibits snap-back with the anode voltage and current density 0.96V and 100A/cm2, respectively.

Original languageEnglish
Title of host publication2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages395-398
Number of pages4
ISBN (Print)0780377494, 9780780377493
DOIs
Publication statusPublished - 2003
EventIEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003 - Tsimshatsui, Kowloon, Hong Kong
Duration: 2003 Dec 162003 Dec 18

Other

OtherIEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003
CountryHong Kong
CityTsimshatsui, Kowloon
Period03/12/1603/12/18

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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  • Cite this

    Kim, D. W., Kim, D. J., Kang, E. G., Sung, M. Y., & Rhie, D. H. (2003). A new EST with dual trench gate electrode (DTG-EST). In 2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003 (pp. 395-398). [1283558] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDSSC.2003.1283558