A new interface defect spectroscopy method

J. T. Ryan, L. C. Yu, Jae Ho Han, J. J. Kopanski, K. P. Cheung, F. Zhang, C. Wang, J. P. Campbell, J. S. Suehle, V. Tilak, J. Fronheiser

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

A new interface defect spectroscopy method based on variable height charge pumping capable of observing the amphoteric nature of Si/SiO2 interface states in production quality sub-micron devices is demonstrated. It can help to resolve the long standing debate about the true nature of interface states.

Original languageEnglish
Title of host publicationInternational Symposium on VLSI Technology, Systems, and Applications, Proceedings
Pages82-85
Number of pages4
DOIs
Publication statusPublished - 2011 Jul 11
Externally publishedYes
Event2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011 - Hsinchu, Taiwan, Province of China
Duration: 2011 Apr 252011 Apr 27

Other

Other2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011
CountryTaiwan, Province of China
CityHsinchu
Period11/4/2511/4/27

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Keywords

  • charge pumping
  • interface states
  • P centers

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Ryan, J. T., Yu, L. C., Han, J. H., Kopanski, J. J., Cheung, K. P., Zhang, F., ... Fronheiser, J. (2011). A new interface defect spectroscopy method. In International Symposium on VLSI Technology, Systems, and Applications, Proceedings (pp. 82-85). [5872242] https://doi.org/10.1109/VTSA.2011.5872242