A new interface defect spectroscopy method

J. T. Ryan; L. C. Yu; J. H. Han; J. J. Kopanski; K. P. Cheung; F. Zhang; C. Wang; J. P. Campbell; J. S. Suehle; V. Tilak; J. Fronheiser

doi:10.1109/VTSA.2011.5872242

A new interface defect spectroscopy method

J. T. Ryan, L. C. Yu, J. H. Han, J. J. Kopanski, K. P. Cheung, F. Zhang, C. Wang, J. P. Campbell, J. S. Suehle, V. Tilak, J. Fronheiser

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

A new interface defect spectroscopy method based on variable height charge pumping capable of observing the amphoteric nature of Si/SiO₂ interface states in production quality sub-micron devices is demonstrated. It can help to resolve the long standing debate about the true nature of interface states.

Original language	English
Title of host publication	Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011
Pages	82-85
Number of pages	4
DOIs	https://doi.org/10.1109/VTSA.2011.5872242
Publication status	Published - 2011
Externally published	Yes
Event	2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011 - Hsinchu, Taiwan, Province of China Duration: 2011 Apr 25 → 2011 Apr 27

Publication series

Name	International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Other

Other	2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011
Country/Territory	Taiwan, Province of China
City	Hsinchu
Period	11/4/25 → 11/4/27

Keywords

P centers
charge pumping
interface states

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1109/VTSA.2011.5872242

Cite this

Ryan, J. T., Yu, L. C., Han, J. H., Kopanski, J. J., Cheung, K. P., Zhang, F., Wang, C., Campbell, J. P., Suehle, J. S., Tilak, V., & Fronheiser, J. (2011). A new interface defect spectroscopy method. In Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011 (pp. 82-85). [5872242] (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). https://doi.org/10.1109/VTSA.2011.5872242

A new interface defect spectroscopy method. / Ryan, J. T.; Yu, L. C.; Han, J. H. et al.

Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011. 2011. p. 82-85 5872242 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Ryan, JT, Yu, LC, Han, JH, Kopanski, JJ, Cheung, KP, Zhang, F, Wang, C, Campbell, JP, Suehle, JS, Tilak, V & Fronheiser, J 2011, A new interface defect spectroscopy method. in Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011., 5872242, International Symposium on VLSI Technology, Systems, and Applications, Proceedings, pp. 82-85, 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011, Hsinchu, Taiwan, Province of China, 11/4/25. https://doi.org/10.1109/VTSA.2011.5872242

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title = "A new interface defect spectroscopy method",

abstract = "A new interface defect spectroscopy method based on variable height charge pumping capable of observing the amphoteric nature of Si/SiO2 interface states in production quality sub-micron devices is demonstrated. It can help to resolve the long standing debate about the true nature of interface states.",

keywords = "P centers, charge pumping, interface states",

author = "Ryan, {J. T.} and Yu, {L. C.} and Han, {J. H.} and Kopanski, {J. J.} and Cheung, {K. P.} and F. Zhang and C. Wang and Campbell, {J. P.} and Suehle, {J. S.} and V. Tilak and J. Fronheiser",

year = "2011",

doi = "10.1109/VTSA.2011.5872242",

language = "English",

isbn = "9781424484928",

series = "International Symposium on VLSI Technology, Systems, and Applications, Proceedings",

pages = "82--85",

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note = "2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011 ; Conference date: 25-04-2011 Through 27-04-2011",

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AU - Wang, C.

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AU - Fronheiser, J.

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BT - Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011

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ER -

A new interface defect spectroscopy method

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Keywords

ASJC Scopus subject areas

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