A new interface defect spectroscopy method

J. T. Ryan, L. C. Yu, J. H. Han, J. J. Kopanski, K. P. Cheung, F. Zhang, C. Wang, J. P. Campbell, J. S. Suehle, V. Tilak, J. Fronheiser

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

A new interface defect spectroscopy method based on variable height charge pumping capable of observing the amphoteric nature of Si/SiO2 interface states in production quality sub-micron devices is demonstrated. It can help to resolve the long standing debate about the true nature of Si/SiO2 interface states. Additionally, we show that this is a powerful technique for studying other important material systems.

Original languageEnglish
Title of host publication2011 International Reliability Physics Symposium, IRPS 2011
Pages3A.4.1-3A.4.5
DOIs
Publication statusPublished - 2011
Externally publishedYes
Event49th International Reliability Physics Symposium, IRPS 2011 - Monterey, CA, United States
Duration: 2011 Apr 102011 Apr 14

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
ISSN (Print)1541-7026

Other

Other49th International Reliability Physics Symposium, IRPS 2011
CountryUnited States
CityMonterey, CA
Period11/4/1011/4/14

Keywords

  • P centers
  • charge pumping
  • interface states

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Ryan, J. T., Yu, L. C., Han, J. H., Kopanski, J. J., Cheung, K. P., Zhang, F., Wang, C., Campbell, J. P., Suehle, J. S., Tilak, V., & Fronheiser, J. (2011). A new interface defect spectroscopy method. In 2011 International Reliability Physics Symposium, IRPS 2011 (pp. 3A.4.1-3A.4.5). [5784477] (IEEE International Reliability Physics Symposium Proceedings). https://doi.org/10.1109/IRPS.2011.5784477