A new interface defect spectroscopy method

J. T. Ryan, L. C. Yu, Jae Ho Han, J. J. Kopanski, K. P. Cheung, F. Zhang, C. Wang, J. P. Campbell, J. S. Suehle, V. Tilak, J. Fronheiser

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

A new interface defect spectroscopy method based on variable height charge pumping capable of observing the amphoteric nature of Si/SiO2 interface states in production quality sub-micron devices is demonstrated. It can help to resolve the long standing debate about the true nature of Si/SiO2 interface states. Additionally, we show that this is a powerful technique for studying other important material systems.

Original languageEnglish
Title of host publicationIEEE International Reliability Physics Symposium Proceedings
DOIs
Publication statusPublished - 2011 Jun 23
Externally publishedYes
Event49th International Reliability Physics Symposium, IRPS 2011 - Monterey, CA, United States
Duration: 2011 Apr 102011 Apr 14

Other

Other49th International Reliability Physics Symposium, IRPS 2011
CountryUnited States
CityMonterey, CA
Period11/4/1011/4/14

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Keywords

  • charge pumping
  • interface states
  • P centers

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Ryan, J. T., Yu, L. C., Han, J. H., Kopanski, J. J., Cheung, K. P., Zhang, F., Wang, C., Campbell, J. P., Suehle, J. S., Tilak, V., & Fronheiser, J. (2011). A new interface defect spectroscopy method. In IEEE International Reliability Physics Symposium Proceedings [5784477] https://doi.org/10.1109/IRPS.2011.5784477