A new Lateral Trench Electrode IGBT with a p+ diverter

M. Y. Sung, E. G. Kang

Research output: Contribution to journalArticle

Abstract

A new Lateral Trench Electrode Insulated Gate Bipolar Transistor (LTEIGBT) with a p+ diverter was proposed and fabricated to improve the electrical characteristics of the conventional LTIGBT. The p+ diverter was placed between anode and cathode electrodes. Because the p+ diverter region of the proposed device was enclosed in a trench oxide layer, the electric field centered in the trench-oxide layer, and the punch through breakdown of LTEIGBT with p+ diverter occurred at the high breakdown voltage. Therefore, the p+ diverter of the proposed LTIGBT didn't relate to breakdown voltage in a different way the conventional LTIGBT. As a result of device simulation, the electrical characteristics of the proposed LTEIGBT including latching current density, breakdown voltage and switching speed were superior to conventional devices. After simulation was finished, we fabricated and analyzed the proposed LTEIGBT with a p+ diverter. The maximum current of the proposed device and conventional device were 90 and 70 mA, respectively. Therefore, the proposed LTEIGBT with a p+ diverter is an effective device for smart power IC.

Original languageEnglish
Pages (from-to)520-524
Number of pages5
JournalMicrosystem Technologies
Volume9
Issue number8
DOIs
Publication statusPublished - 2003 Oct 1

Keywords

  • High breakdown voltage
  • Latch-up
  • Lateral Trench Electrode
  • P+ diverter
  • Smart power IC

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Hardware and Architecture
  • Electrical and Electronic Engineering

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