A new lateral trench electrode insulated gate bipolar transistor with p+ diverter for superior electrical characteristics

Man Young Sung, Ey Goo Kang, Dae Jong Kim, Sangsig Kim

Research output: Contribution to journalArticle

Abstract

A new lateral trench electrode insulated gate bipolar transistor (LTEIGBT) with a p-t- diverter was proposed and fabricated to improve the electrical characteristics of the conventional LTIGBT. The p+ diverter was placed between anode and cathode electrodes. Because the p+ diverter region of the proposed device was an enclosed trench oxide layer, the electric field centered on the trench oxide layer and the punch-through breakdown of the LTEIGBT with a p+ diverter was occurred at a high. Therefore, the p+ diverter of the proposed LTIGBT was not related to the breakdow n voltage in contrast to that of the conventional LTIGBT. As a result of device simulation, the electrical characteristics of the proposed LTEIGBT including latching current density, breakdown voltage and switching speed were superior to those of the conventional LIGBTs. After simulation, we fabricated and analyzed the proposed LTEIGBT with a p+ diverter. The maximum currents of the proposed and conventional LTIGBTs were 90mA and 70mA, respectively. Therefore, the proposed LTEIGBT with a p+ diverter is an effective device for a smart power IC.

Original languageEnglish
Pages (from-to)2119-2122
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume42
Issue number4 B
Publication statusPublished - 2003 Apr 1

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Keywords

  • High breakdown voltage
  • Latch-up
  • Lateral trench electrode
  • p+ diverter
  • Smart power IC

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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