A new lateral trench IGBT with p+ diverter having superior electrical characteristics

Ey Goo Kang, Seung Hyun Moon, Man Young Sung

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

A new Lateral Trench Insulated Gate Bipolar Transistor (LTIGBT) with p+ diverter was proposed to improve the characteristics of the conventional LTIGBT. The p+ divert layer was placed between anode electrode region and cathode electrode. Generally, if the LTIGBT had p+ divert region, the forward blocking voltage was decreased greatly because n-drift layer corresponding to punch-through region was reduced. However, the forward blocking voltage of the proposed LTIGBT with p+ diverter was about 140 V. That of the conventional LTIGBT of the same size was 105 V. The forward blocking voltage of LTIGBT with p+ diverter increased 1.3 times more than those of the conventional LTIGBT. Because the p+ diverter region of the proposed device was enclosed trench oxide layer, the electric field moved toward trench-oxide layer, and punch through breakdown of LTIGBT with p+ diverter was occurred, lately. Therefore, the p+ diverter of the proposed LTIGBT didn't relate to breakdown voltage in a different way the conventional LTIGBT. The Latch-up current densities of the conventional LTIGBT and LTIGBT with p+ diverter were 540A/cm2, and 1453A/cm2, respectively. The enhanced latch-up capability of the LTIGBT with p+ diverter was obtained through holes in the current directly reaching the cathode via the p+ divert region and p+ cathode layer beneath n+ cathode layer.

Original languageEnglish
Title of host publicationProceedings of the International Semiconductor Conference, CAS
Pages565-568
Number of pages4
Volume2
Publication statusPublished - 2001 Dec 1
Event2001 International Semiconductor Conference - Sinaia
Duration: 2001 Oct 92001 Oct 13

Other

Other2001 International Semiconductor Conference
CitySinaia
Period01/10/901/10/13

Fingerprint

Insulated gate bipolar transistors (IGBT)
Cathodes
Electric potential
Electrodes
Oxides
Electric breakdown
Anodes
Current density
Electric fields

Keywords

  • Forward blocking voltage
  • Latch-up
  • p+ diverter
  • Power integrated circuits
  • Power transistor

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Kang, E. G., Moon, S. H., & Sung, M. Y. (2001). A new lateral trench IGBT with p+ diverter having superior electrical characteristics. In Proceedings of the International Semiconductor Conference, CAS (Vol. 2, pp. 565-568)

A new lateral trench IGBT with p+ diverter having superior electrical characteristics. / Kang, Ey Goo; Moon, Seung Hyun; Sung, Man Young.

Proceedings of the International Semiconductor Conference, CAS. Vol. 2 2001. p. 565-568.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kang, EG, Moon, SH & Sung, MY 2001, A new lateral trench IGBT with p+ diverter having superior electrical characteristics. in Proceedings of the International Semiconductor Conference, CAS. vol. 2, pp. 565-568, 2001 International Semiconductor Conference, Sinaia, 01/10/9.
Kang EG, Moon SH, Sung MY. A new lateral trench IGBT with p+ diverter having superior electrical characteristics. In Proceedings of the International Semiconductor Conference, CAS. Vol. 2. 2001. p. 565-568
Kang, Ey Goo ; Moon, Seung Hyun ; Sung, Man Young. / A new lateral trench IGBT with p+ diverter having superior electrical characteristics. Proceedings of the International Semiconductor Conference, CAS. Vol. 2 2001. pp. 565-568
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