A new method for the extraction of flat-band voltage and doping concentration in Tri-gate Junctionless Transistors

D. Y. Jeon, S. J. Park, M. Mouis, S. Barraud, G. T. Kim, G. Ghibaudo

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

A new method for the extraction of flat-band voltage (Vfb) and channel doping concentration (Nd) in Tri-gate Junctionless Transistors (JLTs) is presented. The new method, based on the relationship between the top-effective width (Wtop-eff) in accumulation and the effective width (Weff′) in partial depletion, enables the extraction of Vfb and Nd of JLT devices (here as ≈0.61 V and ≈6.4 × 1018 cm-3, respectively). The validity of the new method is also proved by 2D numerical simulations. Furthermore, it is emphasized that the sidewall accumulation current (Id-side) behavior of Tri-gate JLT devices is found to decrease dramatically near Vfb, allowing an estimation of the Vfb position of JLT devices.

Original languageEnglish
Pages (from-to)113-118
Number of pages6
JournalSolid-State Electronics
Volume81
DOIs
Publication statusPublished - 2013

Keywords

  • 2D numerical simulation
  • Doping concentration (N)
  • Effective width (W )
  • Extraction method
  • Flat-band voltage (V )
  • Junctionless Transistors (JLTs)
  • Sidewall accumulation current (I )

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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