A new method for the extraction of flat-band voltage and doping concentration in Tri-gate Junctionless Transistors

D. Y. Jeon, S. J. Park, M. Mouis, S. Barraud, Gyu-Tae Kim, G. Ghibaudo

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

A new method for the extraction of flat-band voltage (Vfb) and channel doping concentration (Nd) in Tri-gate Junctionless Transistors (JLTs) is presented. The new method, based on the relationship between the top-effective width (Wtop-eff) in accumulation and the effective width (Weff′) in partial depletion, enables the extraction of Vfb and Nd of JLT devices (here as ≈0.61 V and ≈6.4 × 1018 cm-3, respectively). The validity of the new method is also proved by 2D numerical simulations. Furthermore, it is emphasized that the sidewall accumulation current (Id-side) behavior of Tri-gate JLT devices is found to decrease dramatically near Vfb, allowing an estimation of the Vfb position of JLT devices.

Original languageEnglish
Pages (from-to)113-118
Number of pages6
JournalSolid-State Electronics
Volume81
DOIs
Publication statusPublished - 2013 Mar 12

Fingerprint

Transistors
transistors
Doping (additives)
Electric potential
electric potential
depletion
Computer simulation
simulation

Keywords

  • 2D numerical simulation
  • Doping concentration (N)
  • Effective width (W )
  • Extraction method
  • Flat-band voltage (V )
  • Junctionless Transistors (JLTs)
  • Sidewall accumulation current (I )

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

Cite this

A new method for the extraction of flat-band voltage and doping concentration in Tri-gate Junctionless Transistors. / Jeon, D. Y.; Park, S. J.; Mouis, M.; Barraud, S.; Kim, Gyu-Tae; Ghibaudo, G.

In: Solid-State Electronics, Vol. 81, 12.03.2013, p. 113-118.

Research output: Contribution to journalArticle

Jeon, D. Y. ; Park, S. J. ; Mouis, M. ; Barraud, S. ; Kim, Gyu-Tae ; Ghibaudo, G. / A new method for the extraction of flat-band voltage and doping concentration in Tri-gate Junctionless Transistors. In: Solid-State Electronics. 2013 ; Vol. 81. pp. 113-118.
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