A New Method of Forming a Thin Single-Crystal Silicon Diaphragm using Merged Epitaxial Lateral Overgrowth for Sensor Applications

James J. Pak, Gerold W. Neudeck, Abul E. Kabir, David W. Deroo, Steven E. Staller, James H. Logsdon

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Merged epitaxial lateral overgrowth (MELO) of silicon was combined with an SiO2 etch stop to form a novel 9-μm-thick and 250-μm x 1000-μm single-crystal silicon membrane for micromechanical sensors. When epitaxial lateral overgrowth (ELO) silicon merges on SiO2 islands, it forms a local silicon-on-insulator (SOI) film of moderate doping concentration. The SiO2 island then acts as a near-perfect etch stop in a KOH- or ethylenediamine-based solution. The silicon diaphragm thickness over a 3-in wafer had a standard deviation of 0.5 μm and is precisely controlled by the epitaxial silicon growth rate (A 0.1 μm/min) rather than by conventional etching techniques. Diodes fabricated in the substrate and over MELO regions have nearly identical reverse-bias currents indicating good quality silicon in the membrane.

Original languageEnglish
Pages (from-to)614-616
Number of pages3
JournalIEEE Electron Device Letters
Volume12
Issue number11
DOIs
Publication statusPublished - 1991 Nov
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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