A new negative-differential-resistance effect in 350 GHz SiGe HBTs operating at cryogenic temperatures

Q. Liang, R. Krithivasan, A. Ahmed, Y. Lu, Y. Li, J. D. Cressler, G. Niu, J. S. Rieh, G. Freeman, D. Ahlgren, A. Joseph

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)
Original languageEnglish
Title of host publication2005 International Semiconductor Device Research Symposium
Pages159-160
Number of pages2
Publication statusPublished - 2005
Event2005 International Semiconductor Device Research Symposium - Bethesda, MD, United States
Duration: 2005 Dec 72005 Dec 9

Publication series

Name2005 International Semiconductor Device Research Symposium
Volume2005

Other

Other2005 International Semiconductor Device Research Symposium
CountryUnited States
CityBethesda, MD
Period05/12/705/12/9

ASJC Scopus subject areas

  • Engineering(all)

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