A new negative-differential-resistance effect in 350 GHz SiGe HBTs operating at cryogenic temperatures

Q. Liang, R. Krithivasan, A. Ahmed, Y. Lu, Y. Li, J. D. Cressler, G. Niu, J. S. Rieh, G. Freeman, D. Ahlgren, A. Joseph

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

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