A new process and structure for oxide semiconductor LCDs

Joon Young Yang, Sul Lee, Seong Joon Cho, Myung Chul Jun, In Byeong Kang, Sang Deog Yeo, Jung ho Park

Research output: Chapter in Book/Report/Conference proceedingChapter

4 Citations (Scopus)

Abstract

A coplanar TFT structure has excellent characteristics in Δ Vp and channel length compared to conventional etch stopper TFT structure in AOS TFT LCD. In this paper, we introduce new 5 mask coplanar structure which reduces two mask steps compared to conventional 7 mask process. And we fabricated 4.5-inch HD resolution panel in our R&D line with our new structure, and its transmittance is 12.5% improved by eliminating contact hole pattern.

Original languageEnglish
Title of host publicationDigest of Technical Papers - SID International Symposium
PublisherBlackwell Publishing Ltd
Pages469-472
Number of pages4
Volume45
Edition1
DOIs
Publication statusPublished - 2014

ASJC Scopus subject areas

  • Engineering(all)

Fingerprint Dive into the research topics of 'A new process and structure for oxide semiconductor LCDs'. Together they form a unique fingerprint.

  • Cite this

    Yang, J. Y., Lee, S., Cho, S. J., Jun, M. C., Kang, I. B., Yeo, S. D., & Park, J. H. (2014). A new process and structure for oxide semiconductor LCDs. In Digest of Technical Papers - SID International Symposium (1 ed., Vol. 45, pp. 469-472). Blackwell Publishing Ltd. https://doi.org/10.1002/j.2168-0159.2014.tb00122.x