A new reference signal generation method for high-density MRAM is reported. 0.4 × 0.8 μm2 magnetic tunnel junction (MTJ) elements were successfully integrated with 0.24-μm CMOS technology. By using a 90-degree rotated MTJ as a new reference signal generator, the reference resistance could be always located in the exact midpoint between high-resistance state R H and low-resistance state RL regardless of applied voltage. When tested in 8 × 8 MTJ arrays, it is found to show good fidelity to our expectations. So it is supposed that this new method is more favorable for high-density MRAM.
- Magnetic random access memory (MRAM)
- Magnetic tunnel junction (MTJ)
- Reference cell
- Tunneling magnetoresistance (TMR)
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering