A new reference signal generation method for MRAM using a 90-degree rotated MTJ

W. C. Jeong; H. J. Kim; J. H. Park; C. W. Jeong; E. Y. Lee; J. H. Oh; G. T. Jeong; G. H. Koh; H. C. Koo; S. H. Lee; S. Y. Lee; J. M. Shin; H. S. Jeong; Kinam Kim

doi:10.1109/TMAG.2004.829328

A new reference signal generation method for MRAM using a 90-degree rotated MTJ

W. C. Jeong, H. J. Kim, J. H. Park, C. W. Jeong, E. Y. Lee, J. H. Oh, G. T. Jeong, G. H. Koh, H. C. Koo, S. H. Lee, S. Y. Lee, J. M. Shin, H. S. Jeong, Kinam Kim

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

A new reference signal generation method for high-density MRAM is reported. 0.4 × 0.8 μm² magnetic tunnel junction (MTJ) elements were successfully integrated with 0.24-μm CMOS technology. By using a 90-degree rotated MTJ as a new reference signal generator, the reference resistance could be always located in the exact midpoint between high-resistance state R _H and low-resistance state R_L regardless of applied voltage. When tested in 8 × 8 MTJ arrays, it is found to show good fidelity to our expectations. So it is supposed that this new method is more favorable for high-density MRAM.

Original language	English
Pages (from-to)	2628-2630
Number of pages	3
Journal	IEEE Transactions on Magnetics
Volume	40
Issue number	4 II
DOIs	https://doi.org/10.1109/TMAG.2004.829328
Publication status	Published - 2004 Jul
Externally published	Yes

Keywords

Magnetic random access memory (MRAM)
Magnetic tunnel junction (MTJ)
Reference cell
Tunneling magnetoresistance (TMR)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/TMAG.2004.829328

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A new reference signal generation method for MRAM using a 90-degree rotated MTJ. / Jeong, W. C.; Kim, H. J.; Park, J. H.; Jeong, C. W.; Lee, E. Y.; Oh, J. H.; Jeong, G. T.; Koh, G. H.; Koo, H. C.; Lee, S. H.; Lee, S. Y.; Shin, J. M.; Jeong, H. S.; Kim, Kinam.

In: IEEE Transactions on Magnetics, Vol. 40, No. 4 II, 07.2004, p. 2628-2630.

Research output: Contribution to journal › Article › peer-review

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abstract = "A new reference signal generation method for high-density MRAM is reported. 0.4 × 0.8 μm2 magnetic tunnel junction (MTJ) elements were successfully integrated with 0.24-μm CMOS technology. By using a 90-degree rotated MTJ as a new reference signal generator, the reference resistance could be always located in the exact midpoint between high-resistance state R H and low-resistance state RL regardless of applied voltage. When tested in 8 × 8 MTJ arrays, it is found to show good fidelity to our expectations. So it is supposed that this new method is more favorable for high-density MRAM.",

keywords = "Magnetic random access memory (MRAM), Magnetic tunnel junction (MTJ), Reference cell, Tunneling magnetoresistance (TMR)",

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AU - Lee, E. Y.

AU - Oh, J. H.

AU - Jeong, G. T.

AU - Koh, G. H.

AU - Koo, H. C.

AU - Lee, S. H.

AU - Lee, S. Y.

AU - Shin, J. M.

AU - Jeong, H. S.

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AB - A new reference signal generation method for high-density MRAM is reported. 0.4 × 0.8 μm2 magnetic tunnel junction (MTJ) elements were successfully integrated with 0.24-μm CMOS technology. By using a 90-degree rotated MTJ as a new reference signal generator, the reference resistance could be always located in the exact midpoint between high-resistance state R H and low-resistance state RL regardless of applied voltage. When tested in 8 × 8 MTJ arrays, it is found to show good fidelity to our expectations. So it is supposed that this new method is more favorable for high-density MRAM.

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