A new reference signal generation method for MRAM using a 90-degree rotated MTJ

W. C. Jeong; H. J. Kim; J. H. Park; C. W. Jeong; E. Y. Lee; J. H. Oh; G. T. Jeong; G. H. Koh; H. C. Koo; S. H. Lee; S. Y. Lee; J. M. Shin; H. S. Jeong; Kinam Kim

doi:10.1109/TMAG.2004.829328

A new reference signal generation method for MRAM using a 90-degree rotated MTJ

W. C. Jeong, H. J. Kim, J. H. Park, C. W. Jeong, E. Y. Lee, J. H. Oh, G. T. Jeong, G. H. Koh, H. C. Koo, S. H. Lee, S. Y. Lee, J. M. Shin, H. S. Jeong, Kinam Kim

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

A new reference signal generation method for high-density MRAM is reported. 0.4 × 0.8 μm² magnetic tunnel junction (MTJ) elements were successfully integrated with 0.24-μm CMOS technology. By using a 90-degree rotated MTJ as a new reference signal generator, the reference resistance could be always located in the exact midpoint between high-resistance state R _H and low-resistance state R_L regardless of applied voltage. When tested in 8 × 8 MTJ arrays, it is found to show good fidelity to our expectations. So it is supposed that this new method is more favorable for high-density MRAM.

Original language	English
Pages (from-to)	2628-2630
Number of pages	3
Journal	IEEE Transactions on Magnetics
Volume	40
Issue number	4 II
DOIs	https://doi.org/10.1109/TMAG.2004.829328
Publication status	Published - 2004 Jul
Externally published	Yes

Keywords

Magnetic random access memory (MRAM)
Magnetic tunnel junction (MTJ)
Reference cell
Tunneling magnetoresistance (TMR)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TMAG.2004.829328

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A new reference signal generation method for MRAM using a 90-degree rotated MTJ. / Jeong, W. C.; Kim, H. J.; Park, J. H.; Jeong, C. W.; Lee, E. Y.; Oh, J. H.; Jeong, G. T.; Koh, G. H.; Koo, H. C.; Lee, S. H.; Lee, S. Y.; Shin, J. M.; Jeong, H. S.; Kim, Kinam.

In: IEEE Transactions on Magnetics, Vol. 40, No. 4 II, 07.2004, p. 2628-2630.

Research output: Contribution to journal › Article › peer-review

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title = "A new reference signal generation method for MRAM using a 90-degree rotated MTJ",

abstract = "A new reference signal generation method for high-density MRAM is reported. 0.4 × 0.8 μm2 magnetic tunnel junction (MTJ) elements were successfully integrated with 0.24-μm CMOS technology. By using a 90-degree rotated MTJ as a new reference signal generator, the reference resistance could be always located in the exact midpoint between high-resistance state R H and low-resistance state RL regardless of applied voltage. When tested in 8 × 8 MTJ arrays, it is found to show good fidelity to our expectations. So it is supposed that this new method is more favorable for high-density MRAM.",

keywords = "Magnetic random access memory (MRAM), Magnetic tunnel junction (MTJ), Reference cell, Tunneling magnetoresistance (TMR)",

author = "Jeong, {W. C.} and Kim, {H. J.} and Park, {J. H.} and Jeong, {C. W.} and Lee, {E. Y.} and Oh, {J. H.} and Jeong, {G. T.} and Koh, {G. H.} and Koo, {H. C.} and Lee, {S. H.} and Lee, {S. Y.} and Shin, {J. M.} and Jeong, {H. S.} and Kinam Kim",

note = "Funding Information: Manuscript received October 16, 2003. This work was supported by a grant from Samsung Advanced Institute of Technology. The authors are with the Advanced Technology Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd., Yongin-City, Gyeonggi-Do, Korea 449-711 (e-mail: wcjeong@samsung.com). Digital Object Identifier 10.1109/TMAG.2004.829328 Fig. 1. (a) Cross-sectional TEM image of fully integrated MRAM. (b) TEM image of MTJ stacking. (c) Schematic diagram of the MRAM cell layout. Copyright: Copyright 2009 Elsevier B.V., All rights reserved.",

year = "2004",

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doi = "10.1109/TMAG.2004.829328",

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AU - Lee, E. Y.

AU - Oh, J. H.

AU - Jeong, G. T.

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AU - Lee, S. H.

AU - Lee, S. Y.

AU - Shin, J. M.

AU - Jeong, H. S.

AU - Kim, Kinam

N1 - Funding Information: Manuscript received October 16, 2003. This work was supported by a grant from Samsung Advanced Institute of Technology. The authors are with the Advanced Technology Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd., Yongin-City, Gyeonggi-Do, Korea 449-711 (e-mail: wcjeong@samsung.com). Digital Object Identifier 10.1109/TMAG.2004.829328 Fig. 1. (a) Cross-sectional TEM image of fully integrated MRAM. (b) TEM image of MTJ stacking. (c) Schematic diagram of the MRAM cell layout. Copyright: Copyright 2009 Elsevier B.V., All rights reserved.

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N2 - A new reference signal generation method for high-density MRAM is reported. 0.4 × 0.8 μm2 magnetic tunnel junction (MTJ) elements were successfully integrated with 0.24-μm CMOS technology. By using a 90-degree rotated MTJ as a new reference signal generator, the reference resistance could be always located in the exact midpoint between high-resistance state R H and low-resistance state RL regardless of applied voltage. When tested in 8 × 8 MTJ arrays, it is found to show good fidelity to our expectations. So it is supposed that this new method is more favorable for high-density MRAM.

AB - A new reference signal generation method for high-density MRAM is reported. 0.4 × 0.8 μm2 magnetic tunnel junction (MTJ) elements were successfully integrated with 0.24-μm CMOS technology. By using a 90-degree rotated MTJ as a new reference signal generator, the reference resistance could be always located in the exact midpoint between high-resistance state R H and low-resistance state RL regardless of applied voltage. When tested in 8 × 8 MTJ arrays, it is found to show good fidelity to our expectations. So it is supposed that this new method is more favorable for high-density MRAM.

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KW - Reference cell

KW - Tunneling magnetoresistance (TMR)

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A new reference signal generation method for MRAM using a 90-degree rotated MTJ

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Keywords

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