A new reference signal generation method for MRAM using a 90-degree rotated MTJ

W. C. Jeong, H. J. Kim, J. H. Park, C. W. Jeong, E. Y. Lee, J. H. Oh, G. T. Jeong, G. H. Koh, H. C. Koo, S. H. Lee, S. Y. Lee, J. M. Shin, H. S. Jeong, Kinam Kim

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

A new reference signal generation method for high-density MRAM is reported. 0.4 × 0.8 μm2 magnetic tunnel junction (MTJ) elements were successfully integrated with 0.24-μm CMOS technology. By using a 90-degree rotated MTJ as a new reference signal generator, the reference resistance could be always located in the exact midpoint between high-resistance state R H and low-resistance state RL regardless of applied voltage. When tested in 8 × 8 MTJ arrays, it is found to show good fidelity to our expectations. So it is supposed that this new method is more favorable for high-density MRAM.

Original languageEnglish
Pages (from-to)2628-2630
Number of pages3
JournalIEEE Transactions on Magnetics
Volume40
Issue number4 II
DOIs
Publication statusPublished - 2004 Jul 1

Keywords

  • Magnetic random access memory (MRAM)
  • Magnetic tunnel junction (MTJ)
  • Reference cell
  • Tunneling magnetoresistance (TMR)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Jeong, W. C., Kim, H. J., Park, J. H., Jeong, C. W., Lee, E. Y., Oh, J. H., Jeong, G. T., Koh, G. H., Koo, H. C., Lee, S. H., Lee, S. Y., Shin, J. M., Jeong, H. S., & Kim, K. (2004). A new reference signal generation method for MRAM using a 90-degree rotated MTJ. IEEE Transactions on Magnetics, 40(4 II), 2628-2630. https://doi.org/10.1109/TMAG.2004.829328