A new silicon-on-insulator lateral insulated-gate bipolar transistor with dual-channel structure

Woo Beom Choi, Woong Je Sung, Yong Il Lee, Man Young Sung

Research output: Contribution to journalArticle

Abstract

To improve the latch-up and forward voltage drop properties of the silicon-on-insulator (SOI) lateral insulated-gate bipolar transistor (LIGBT), a new SOI LIGBT structure is proposed and fabricated. The new device employs a dual-channel structure in order to enable more electrons to flow into the n-drift layer and to improve the latch-up characteristic.

Original languageEnglish
Pages (from-to)6683-6685
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume40
Issue number12
Publication statusPublished - 2001 Dec 1

Fingerprint

latch-up
Insulated gate bipolar transistors (IGBT)
bipolar transistors
insulators
Silicon
silicon
Electrons
electric potential
electrons

Keywords

  • Dual-channel structure
  • Forward voltage drop
  • Latch-up current
  • LIGBT
  • SOI

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

A new silicon-on-insulator lateral insulated-gate bipolar transistor with dual-channel structure. / Choi, Woo Beom; Sung, Woong Je; Lee, Yong Il; Sung, Man Young.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 40, No. 12, 01.12.2001, p. 6683-6685.

Research output: Contribution to journalArticle

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