A noble suspended type thin film resonator (STFR) using the SOI technology

Hyun Ho Kim, Byeong Kwon Ju, Yun-Hi Lee, Si Hyung Lee, Jeon Kook Lee, Soo-Won Kim

Research output: Contribution to journalArticle

24 Citations (Scopus)

Abstract

The fabrication and characteristics of suspended type thin film resonators (STFRs) using surface micromachining of the SOI technology, have been studied. The size of the active part of STFRs is 160 μm × 160 μm. For the piezoelectric AlN thin film, the following etch rate was observed 200 nm min-1 in 0.6 wt.% TMAH. The thickness of the piezoelectric AlN film for the STFR is 2 μm. Cr thin film is used as the top and bottom electrode. This device is free-standing and has a resonant frequency of 1.65 GHz for the 2 μm AlN thin film, a Keff 2 of 2.4%, Qs of 91.7, Qp of 87.7.

Original languageEnglish
Pages (from-to)255-258
Number of pages4
JournalSensors and Actuators, A: Physical
Volume89
Issue number3
DOIs
Publication statusPublished - 2001 Apr 15

Fingerprint

SOI (semiconductors)
Resonators
resonators
Thin films
thin films
Surface micromachining
micromachining
resonant frequencies
Natural frequencies
Fabrication
Electrodes
fabrication
electrodes

Keywords

  • AlN
  • Piezoelectric
  • SOI technology
  • Suspended
  • Thin film resonator

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Mechanical Engineering
  • Instrumentation

Cite this

A noble suspended type thin film resonator (STFR) using the SOI technology. / Kim, Hyun Ho; Ju, Byeong Kwon; Lee, Yun-Hi; Lee, Si Hyung; Lee, Jeon Kook; Kim, Soo-Won.

In: Sensors and Actuators, A: Physical, Vol. 89, No. 3, 15.04.2001, p. 255-258.

Research output: Contribution to journalArticle

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