Abstract
In order to solve the main issues of etch-stopper (ES) pixel structure (mask steps, parasitic capacitance Cgs, TFT channel length) in a-IGZO pixel structure of AMLED, new 5-mask ES a-IGZO pixel structure was investigated TFT channel length of 5 μm could be achieved by self aligned damage preventing layer. We could achieve good characteristics and reliability of short-channel-length (under 5 μm) ES TFTs. And also Cgs could be reduced more than 30%.
Original language | English |
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Title of host publication | Digest of Technical Papers - SID International Symposium |
Publisher | Blackwell Publishing Ltd |
Pages | 304-307 |
Number of pages | 4 |
Volume | 46 |
Edition | Book 1 |
Publication status | Published - 2015 Jun 1 |
Event | 2015 SID International Symposium - San Jose, United States Duration: 2015 Jun 2 → 2015 Jun 3 |
Other
Other | 2015 SID International Symposium |
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Country/Territory | United States |
City | San Jose |
Period | 15/6/2 → 15/6/3 |
ASJC Scopus subject areas
- Engineering(all)