A novel 5-mask etch-stopper pixel structure with a short channel oxide semiconductor TFT

Joon Young Yang; Sung Hoon Jung; Chang Seung Woo; Ju Yun Lee; Myungchul Jun; In Byeong Kang; Jung ho Park

A novel 5-mask etch-stopper pixel structure with a short channel oxide semiconductor TFT

Joon Young Yang, Sung Hoon Jung, Chang Seung Woo, Ju Yun Lee, Myungchul Jun, In Byeong Kang, Jung ho Park

School of Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

In order to solve the main issues of etch-stopper (ES) pixel structure (mask steps, parasitic capacitance C_gs, TFT channel length) in a-IGZO pixel structure of AMLED, new 5-mask ES a-IGZO pixel structure was investigated TFT channel length of 5 μm could be achieved by self aligned damage preventing layer. We could achieve good characteristics and reliability of short-channel-length (under 5 μm) ES TFTs. And also C_gs could be reduced more than 30%.

Original language	English
Title of host publication	Digest of Technical Papers - SID International Symposium
Publisher	Blackwell Publishing Ltd
Pages	304-307
Number of pages	4
Volume	46
Edition	Book 1
Publication status	Published - 2015 Jun 1
Event	2015 SID International Symposium - San Jose, United States Duration: 2015 Jun 2 → 2015 Jun 3

Other

Other	2015 SID International Symposium
Country	United States
City	San Jose
Period	15/6/2 → 15/6/3

ASJC Scopus subject areas

Engineering(all)

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A novel 5-mask etch-stopper pixel structure with a short channel oxide semiconductor TFT. / Yang, Joon Young; Jung, Sung Hoon; Woo, Chang Seung; Lee, Ju Yun; Jun, Myungchul; Kang, In Byeong; Park, Jung ho.

Digest of Technical Papers - SID International Symposium. Vol. 46 Book 1. ed. Blackwell Publishing Ltd, 2015. p. 304-307.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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abstract = "In order to solve the main issues of etch-stopper (ES) pixel structure (mask steps, parasitic capacitance Cgs, TFT channel length) in a-IGZO pixel structure of AMLED, new 5-mask ES a-IGZO pixel structure was investigated TFT channel length of 5 μm could be achieved by self aligned damage preventing layer. We could achieve good characteristics and reliability of short-channel-length (under 5 μm) ES TFTs. And also Cgs could be reduced more than 30%.",

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AU - Jun, Myungchul

AU - Kang, In Byeong

AU - Park, Jung ho

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N2 - In order to solve the main issues of etch-stopper (ES) pixel structure (mask steps, parasitic capacitance Cgs, TFT channel length) in a-IGZO pixel structure of AMLED, new 5-mask ES a-IGZO pixel structure was investigated TFT channel length of 5 μm could be achieved by self aligned damage preventing layer. We could achieve good characteristics and reliability of short-channel-length (under 5 μm) ES TFTs. And also Cgs could be reduced more than 30%.

AB - In order to solve the main issues of etch-stopper (ES) pixel structure (mask steps, parasitic capacitance Cgs, TFT channel length) in a-IGZO pixel structure of AMLED, new 5-mask ES a-IGZO pixel structure was investigated TFT channel length of 5 μm could be achieved by self aligned damage preventing layer. We could achieve good characteristics and reliability of short-channel-length (under 5 μm) ES TFTs. And also Cgs could be reduced more than 30%.

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