A novel 5-mask etch-stopper pixel structure with a short channel oxide semiconductor TFT

Joon Young Yang, Sung Hoon Jung, Chang Seung Woo, Ju Yun Lee, Myungchul Jun, In Byeong Kang, Jung ho Park

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

In order to solve the main issues of etch-stopper (ES) pixel structure (mask steps, parasitic capacitance Cgs, TFT channel length) in a-IGZO pixel structure of AMLED, new 5-mask ES a-IGZO pixel structure was investigated TFT channel length of 5 μm could be achieved by self aligned damage preventing layer. We could achieve good characteristics and reliability of short-channel-length (under 5 μm) ES TFTs. And also Cgs could be reduced more than 30%.

Original languageEnglish
Title of host publicationDigest of Technical Papers - SID International Symposium
PublisherBlackwell Publishing Ltd
Pages304-307
Number of pages4
Volume46
EditionBook 1
Publication statusPublished - 2015 Jun 1
Event2015 SID International Symposium - San Jose, United States
Duration: 2015 Jun 22015 Jun 3

Other

Other2015 SID International Symposium
CountryUnited States
CitySan Jose
Period15/6/215/6/3

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Yang, J. Y., Jung, S. H., Woo, C. S., Lee, J. Y., Jun, M., Kang, I. B., & Park, J. H. (2015). A novel 5-mask etch-stopper pixel structure with a short channel oxide semiconductor TFT. In Digest of Technical Papers - SID International Symposium (Book 1 ed., Vol. 46, pp. 304-307). Blackwell Publishing Ltd.