Abstract
In order to solve the main issues of etch-stopper (ES) pixel structure (mask steps, parasitic capacitance Cgs, TFT channel length) in a-IGZO pixel structure of AMLED, new 5-mask ES a-IGZO pixel structure was investigated TFT channel length of 5 μm could be achieved by self aligned damage preventing layer. We could achieve good characteristics and reliability of short-channel-length (under 5 μm) ES TFTs. And also Cgs could be reduced more than 30%.
| Original language | English |
|---|---|
| Title of host publication | Digest of Technical Papers - SID International Symposium |
| Publisher | Blackwell Publishing Ltd |
| Pages | 304-307 |
| Number of pages | 4 |
| Volume | 46 |
| Edition | Book 1 |
| Publication status | Published - 2015 Jun 1 |
| Event | 2015 SID International Symposium - San Jose, United States Duration: 2015 Jun 2 → 2015 Jun 3 |
Other
| Other | 2015 SID International Symposium |
|---|---|
| Country | United States |
| City | San Jose |
| Period | 15/6/2 → 15/6/3 |
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ASJC Scopus subject areas
- Engineering(all)
Cite this
A novel 5-mask etch-stopper pixel structure with a short channel oxide semiconductor TFT. / Yang, Joon Young; Jung, Sung Hoon; Woo, Chang Seung; Lee, Ju Yun; Jun, Myungchul; Kang, In Byeong; Park, Jung ho.
Digest of Technical Papers - SID International Symposium. Vol. 46 Book 1. ed. Blackwell Publishing Ltd, 2015. p. 304-307.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - A novel 5-mask etch-stopper pixel structure with a short channel oxide semiconductor TFT
AU - Yang, Joon Young
AU - Jung, Sung Hoon
AU - Woo, Chang Seung
AU - Lee, Ju Yun
AU - Jun, Myungchul
AU - Kang, In Byeong
AU - Park, Jung ho
PY - 2015/6/1
Y1 - 2015/6/1
N2 - In order to solve the main issues of etch-stopper (ES) pixel structure (mask steps, parasitic capacitance Cgs, TFT channel length) in a-IGZO pixel structure of AMLED, new 5-mask ES a-IGZO pixel structure was investigated TFT channel length of 5 μm could be achieved by self aligned damage preventing layer. We could achieve good characteristics and reliability of short-channel-length (under 5 μm) ES TFTs. And also Cgs could be reduced more than 30%.
AB - In order to solve the main issues of etch-stopper (ES) pixel structure (mask steps, parasitic capacitance Cgs, TFT channel length) in a-IGZO pixel structure of AMLED, new 5-mask ES a-IGZO pixel structure was investigated TFT channel length of 5 μm could be achieved by self aligned damage preventing layer. We could achieve good characteristics and reliability of short-channel-length (under 5 μm) ES TFTs. And also Cgs could be reduced more than 30%.
UR - http://www.scopus.com/inward/record.url?scp=84963706977&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84963706977&partnerID=8YFLogxK
M3 - Conference contribution
VL - 46
SP - 304
EP - 307
BT - Digest of Technical Papers - SID International Symposium
PB - Blackwell Publishing Ltd
ER -