A novel 5-mask etch-stopper pixel structure with a short channel oxide semiconductor TFT

Joon Young Yang, Sung Hoon Jung, Chang Seung Woo, Ju Yun Lee, Myungchul Jun, In Byeong Kang, Jung ho Park

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

In order to solve the main issues of etch-stopper (ES) pixel structure (mask steps, parasitic capacitance Cgs, TFT channel length) in a-IGZO pixel structure of AMLED, new 5-mask ES a-IGZO pixel structure was investigated TFT channel length of 5 μm could be achieved by self aligned damage preventing layer. We could achieve good characteristics and reliability of short-channel-length (under 5 μm) ES TFTs. And also Cgs could be reduced more than 30%.

Original languageEnglish
Title of host publicationDigest of Technical Papers - SID International Symposium
PublisherBlackwell Publishing Ltd
Pages304-307
Number of pages4
Volume46
EditionBook 1
Publication statusPublished - 2015 Jun 1
Event2015 SID International Symposium - San Jose, United States
Duration: 2015 Jun 22015 Jun 3

Other

Other2015 SID International Symposium
CountryUnited States
CitySan Jose
Period15/6/215/6/3

Fingerprint

Masks
Pixels
Capacitance
Oxide semiconductors

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Yang, J. Y., Jung, S. H., Woo, C. S., Lee, J. Y., Jun, M., Kang, I. B., & Park, J. H. (2015). A novel 5-mask etch-stopper pixel structure with a short channel oxide semiconductor TFT. In Digest of Technical Papers - SID International Symposium (Book 1 ed., Vol. 46, pp. 304-307). Blackwell Publishing Ltd.

A novel 5-mask etch-stopper pixel structure with a short channel oxide semiconductor TFT. / Yang, Joon Young; Jung, Sung Hoon; Woo, Chang Seung; Lee, Ju Yun; Jun, Myungchul; Kang, In Byeong; Park, Jung ho.

Digest of Technical Papers - SID International Symposium. Vol. 46 Book 1. ed. Blackwell Publishing Ltd, 2015. p. 304-307.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Yang, JY, Jung, SH, Woo, CS, Lee, JY, Jun, M, Kang, IB & Park, JH 2015, A novel 5-mask etch-stopper pixel structure with a short channel oxide semiconductor TFT. in Digest of Technical Papers - SID International Symposium. Book 1 edn, vol. 46, Blackwell Publishing Ltd, pp. 304-307, 2015 SID International Symposium, San Jose, United States, 15/6/2.
Yang JY, Jung SH, Woo CS, Lee JY, Jun M, Kang IB et al. A novel 5-mask etch-stopper pixel structure with a short channel oxide semiconductor TFT. In Digest of Technical Papers - SID International Symposium. Book 1 ed. Vol. 46. Blackwell Publishing Ltd. 2015. p. 304-307
Yang, Joon Young ; Jung, Sung Hoon ; Woo, Chang Seung ; Lee, Ju Yun ; Jun, Myungchul ; Kang, In Byeong ; Park, Jung ho. / A novel 5-mask etch-stopper pixel structure with a short channel oxide semiconductor TFT. Digest of Technical Papers - SID International Symposium. Vol. 46 Book 1. ed. Blackwell Publishing Ltd, 2015. pp. 304-307
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