Abstract
In order to solve the main issues of etch-stopper (ES) pixel structure (mask steps, parasitic capacitance Cgs, TFT channel length) in a-IGZO pixel structure of AMLED, new 5-mask ES a-IGZO pixel structure was investigated TFT channel length of 5 μm could be achieved by self aligned damage preventing layer. We could achieve good characteristics and reliability of short-channel-length (under 5 μm) ES TFTs. And also Cgs could be reduced more than 30%.
| Original language | English |
|---|---|
| Title of host publication | Digest of Technical Papers - SID International Symposium |
| Publisher | Blackwell Publishing Ltd |
| Pages | 304-307 |
| Number of pages | 4 |
| Volume | 46 |
| Edition | Book 1 |
| Publication status | Published - 2015 Jun 1 |
| Event | 2015 SID International Symposium - San Jose, United States Duration: 2015 Jun 2 → 2015 Jun 3 |
Other
| Other | 2015 SID International Symposium |
|---|---|
| Country | United States |
| City | San Jose |
| Period | 15/6/2 → 15/6/3 |
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ASJC Scopus subject areas
- Engineering(all)
Cite this
Yang, J. Y., Jung, S. H., Woo, C. S., Lee, J. Y., Jun, M., Kang, I. B., & Park, J. H. (2015). A novel 5-mask etch-stopper pixel structure with a short channel oxide semiconductor TFT. In Digest of Technical Papers - SID International Symposium (Book 1 ed., Vol. 46, pp. 304-307). Blackwell Publishing Ltd.