A novel lateral trench IGBT employing the p+ diverter having superior forward blocking and latch-up characteristics

Ey Goo Kang; Seung Hyun Moon; Man Young Sung

doi:10.1109/ICSICT.2001.981442

A novel lateral trench IGBT employing the p+ diverter having superior forward blocking and latch-up characteristics

Ey Goo Kang, Seung Hyun Moon, Man Young Sung

School of Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A new Lateral Trench Insulated Gate Bipolar Transistor (LTIGBT) with p+ diverter was proposed to improve the characteristics of the conventional LTIGBT. The p+ divert layer was placed between anode electrode region and cathode electrode. Generally, if the LTIGBT had p+ divert region, forward blocking voltage was decreased, greatly because n-drift layer corresponding to punchthrough was decreased. However, the forward blocking voltage of the proposed LTIGBT with p+ diverter was 140 V. That of the conventional LTIGBT of the same size was 105 V. The forward blocking voltage of LTIGBT with p+ diverter increased 1.3 times more than those of the conventional LTIGBT. Because the p+ diverter region of the proposed device was enclosed trench oxide layer, the electric field moved toward trench-oxide layer. The latch-up current densities of the conventional LTIGBT and LTIGBT with p+ diverter were 540 A/cm², and 1453 A/cm², respectively. The enhanced latch-up capability of the LTEIGBT was obtained through holes in the current directly reaching the cathode via the p+ divert region and p+ cathode layer beneath n+ cathode layer.

Original language	English
Title of host publication	2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	139-142
Number of pages	4
Volume	1
ISBN (Electronic)	0780365208, 9780780365209
DOIs	https://doi.org/10.1109/ICSICT.2001.981442
Publication status	Published - 2001
Event	6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Shanghai, China Duration: 2001 Oct 22 → 2001 Oct 25

Other

Other	6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001
Country/Territory	China
City	Shanghai
Period	01/10/22 → 01/10/25

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/ICSICT.2001.981442

Cite this

Kang, E. G., Moon, S. H., & Sung, M. Y. (2001). A novel lateral trench IGBT employing the p+ diverter having superior forward blocking and latch-up characteristics. In 2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings (Vol. 1, pp. 139-142). [981442] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICSICT.2001.981442

A novel lateral trench IGBT employing the p+ diverter having superior forward blocking and latch-up characteristics. / Kang, Ey Goo; Moon, Seung Hyun; Sung, Man Young.

2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings. Vol. 1 Institute of Electrical and Electronics Engineers Inc., 2001. p. 139-142 981442.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kang, EG, Moon, SH & Sung, MY 2001, A novel lateral trench IGBT employing the p+ diverter having superior forward blocking and latch-up characteristics. in 2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings. vol. 1, 981442, Institute of Electrical and Electronics Engineers Inc., pp. 139-142, 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001, Shanghai, China, 01/10/22. https://doi.org/10.1109/ICSICT.2001.981442

Kang EG, Moon SH, Sung MY. A novel lateral trench IGBT employing the p+ diverter having superior forward blocking and latch-up characteristics. In 2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings. Vol. 1. Institute of Electrical and Electronics Engineers Inc. 2001. p. 139-142. 981442 https://doi.org/10.1109/ICSICT.2001.981442

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abstract = "A new Lateral Trench Insulated Gate Bipolar Transistor (LTIGBT) with p+ diverter was proposed to improve the characteristics of the conventional LTIGBT. The p+ divert layer was placed between anode electrode region and cathode electrode. Generally, if the LTIGBT had p+ divert region, forward blocking voltage was decreased, greatly because n-drift layer corresponding to punchthrough was decreased. However, the forward blocking voltage of the proposed LTIGBT with p+ diverter was 140 V. That of the conventional LTIGBT of the same size was 105 V. The forward blocking voltage of LTIGBT with p+ diverter increased 1.3 times more than those of the conventional LTIGBT. Because the p+ diverter region of the proposed device was enclosed trench oxide layer, the electric field moved toward trench-oxide layer. The latch-up current densities of the conventional LTIGBT and LTIGBT with p+ diverter were 540 A/cm2, and 1453 A/cm2, respectively. The enhanced latch-up capability of the LTEIGBT was obtained through holes in the current directly reaching the cathode via the p+ divert region and p+ cathode layer beneath n+ cathode layer.",

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AB - A new Lateral Trench Insulated Gate Bipolar Transistor (LTIGBT) with p+ diverter was proposed to improve the characteristics of the conventional LTIGBT. The p+ divert layer was placed between anode electrode region and cathode electrode. Generally, if the LTIGBT had p+ divert region, forward blocking voltage was decreased, greatly because n-drift layer corresponding to punchthrough was decreased. However, the forward blocking voltage of the proposed LTIGBT with p+ diverter was 140 V. That of the conventional LTIGBT of the same size was 105 V. The forward blocking voltage of LTIGBT with p+ diverter increased 1.3 times more than those of the conventional LTIGBT. Because the p+ diverter region of the proposed device was enclosed trench oxide layer, the electric field moved toward trench-oxide layer. The latch-up current densities of the conventional LTIGBT and LTIGBT with p+ diverter were 540 A/cm2, and 1453 A/cm2, respectively. The enhanced latch-up capability of the LTEIGBT was obtained through holes in the current directly reaching the cathode via the p+ divert region and p+ cathode layer beneath n+ cathode layer.

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A novel lateral trench IGBT employing the p+ diverter having superior forward blocking and latch-up characteristics

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