A novel lateral trench IGBT employing the p+ diverter having superior forward blocking and latch-up characteristics

Ey Goo Kang, Seung Hyun Moon, Man Young Sung

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A new Lateral Trench Insulated Gate Bipolar Transistor (LTIGBT) with p+ diverter was proposed to improve the characteristics of the conventional LTIGBT. The p+ divert layer was placed between anode electrode region and cathode electrode. Generally, if the LTIGBT had p+ divert region, forward blocking voltage was decreased, greatly because n-drift layer corresponding to punchthrough was decreased. However, the forward blocking voltage of the proposed LTIGBT with p+ diverter was 140 V. That of the conventional LTIGBT of the same size was 105 V. The forward blocking voltage of LTIGBT with p+ diverter increased 1.3 times more than those of the conventional LTIGBT. Because the p+ diverter region of the proposed device was enclosed trench oxide layer, the electric field moved toward trench-oxide layer. The latch-up current densities of the conventional LTIGBT and LTIGBT with p+ diverter were 540 A/cm2, and 1453 A/cm2, respectively. The enhanced latch-up capability of the LTEIGBT was obtained through holes in the current directly reaching the cathode via the p+ divert region and p+ cathode layer beneath n+ cathode layer.

Original languageEnglish
Title of host publication2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages139-142
Number of pages4
Volume1
ISBN (Electronic)0780365208, 9780780365209
DOIs
Publication statusPublished - 2001
Event6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Shanghai, China
Duration: 2001 Oct 222001 Oct 25

Other

Other6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001
CountryChina
CityShanghai
Period01/10/2201/10/25

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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    Kang, E. G., Moon, S. H., & Sung, M. Y. (2001). A novel lateral trench IGBT employing the p+ diverter having superior forward blocking and latch-up characteristics. In 2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings (Vol. 1, pp. 139-142). [981442] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICSICT.2001.981442