Abstract
A new Lateral Trench Insulated Gate Bipolar Transistor (LTIGBT) with p+ diverter was proposed to improve the characteristics of the conventional LTIGBT. The p+ divert layer was placed between anode electrode region and cathode electrode. Generally, if the LTIGBT had p+ divert region, forward blocking voltage was decreased, greatly because n-drift layer corresponding to punchthrough was decreased. However, the forward blocking voltage of the proposed LTIGBT with p+ diverter was 140 V. That of the conventional LTIGBT of the same size was 105 V. The forward blocking voltage of LTIGBT with p+ diverter increased 1.3 times more than those of the conventional LTIGBT. Because the p+ diverter region of the proposed device was enclosed trench oxide layer, the electric field moved toward trench-oxide layer. The latch-up current densities of the conventional LTIGBT and LTIGBT with p+ diverter were 540 A/cm2, and 1453 A/cm2, respectively. The enhanced latch-up capability of the LTEIGBT was obtained through holes in the current directly reaching the cathode via the p+ divert region and p+ cathode layer beneath n+ cathode layer.
Original language | English |
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Title of host publication | 2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 139-142 |
Number of pages | 4 |
Volume | 1 |
ISBN (Electronic) | 0780365208, 9780780365209 |
DOIs | |
Publication status | Published - 2001 |
Event | 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Shanghai, China Duration: 2001 Oct 22 → 2001 Oct 25 |
Other
Other | 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 |
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Country/Territory | China |
City | Shanghai |
Period | 01/10/22 → 01/10/25 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials