Abstract
A new Lateral Trench Insulated Gate Bipolar Transistor (LTIGBT) with p+ diverter was proposed to improve the characteristics of the conventional LTIGBT. The p+ divert layer was placed between anode electrode region and cathode electrode. Generally, if the LTIGBT had p+ divert region, forward blocking voltage was decreased, greatly because n-drift layer corresponding to punchthrough was decreased. However, the forward blocking voltage of the proposed LTIGBT with p+ diverter was 140 V. That of the conventional LTIGBT of the same size was 105 V. The forward blocking voltage of LTIGBT with p+ diverter increased 1.3 times more than those of the conventional LTIGBT. Because the p+ diverter region of the proposed device was enclosed trench oxide layer, the electric field moved toward trench-oxide layer. The latch-up current densities of the conventional LTIGBT and LTIGBT with p+ diverter were 540 A/cm2, and 1453 A/cm2, respectively. The enhanced latch-up capability of the LTEIGBT was obtained through holes in the current directly reaching the cathode via the p+ divert region and p+ cathode layer beneath n+ cathode layer.
| Original language | English |
|---|---|
| Title of host publication | 2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 139-142 |
| Number of pages | 4 |
| Volume | 1 |
| ISBN (Electronic) | 0780365208, 9780780365209 |
| DOIs | |
| Publication status | Published - 2001 |
| Event | 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Shanghai, China Duration: 2001 Oct 22 → 2001 Oct 25 |
Other
| Other | 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 |
|---|---|
| Country | China |
| City | Shanghai |
| Period | 01/10/22 → 01/10/25 |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
Cite this
A novel lateral trench IGBT employing the p+ diverter having superior forward blocking and latch-up characteristics. / Kang, Ey Goo; Moon, Seung Hyun; Sung, Man Young.
2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings. Vol. 1 Institute of Electrical and Electronics Engineers Inc., 2001. p. 139-142 981442.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - A novel lateral trench IGBT employing the p+ diverter having superior forward blocking and latch-up characteristics
AU - Kang, Ey Goo
AU - Moon, Seung Hyun
AU - Sung, Man Young
PY - 2001
Y1 - 2001
N2 - A new Lateral Trench Insulated Gate Bipolar Transistor (LTIGBT) with p+ diverter was proposed to improve the characteristics of the conventional LTIGBT. The p+ divert layer was placed between anode electrode region and cathode electrode. Generally, if the LTIGBT had p+ divert region, forward blocking voltage was decreased, greatly because n-drift layer corresponding to punchthrough was decreased. However, the forward blocking voltage of the proposed LTIGBT with p+ diverter was 140 V. That of the conventional LTIGBT of the same size was 105 V. The forward blocking voltage of LTIGBT with p+ diverter increased 1.3 times more than those of the conventional LTIGBT. Because the p+ diverter region of the proposed device was enclosed trench oxide layer, the electric field moved toward trench-oxide layer. The latch-up current densities of the conventional LTIGBT and LTIGBT with p+ diverter were 540 A/cm2, and 1453 A/cm2, respectively. The enhanced latch-up capability of the LTEIGBT was obtained through holes in the current directly reaching the cathode via the p+ divert region and p+ cathode layer beneath n+ cathode layer.
AB - A new Lateral Trench Insulated Gate Bipolar Transistor (LTIGBT) with p+ diverter was proposed to improve the characteristics of the conventional LTIGBT. The p+ divert layer was placed between anode electrode region and cathode electrode. Generally, if the LTIGBT had p+ divert region, forward blocking voltage was decreased, greatly because n-drift layer corresponding to punchthrough was decreased. However, the forward blocking voltage of the proposed LTIGBT with p+ diverter was 140 V. That of the conventional LTIGBT of the same size was 105 V. The forward blocking voltage of LTIGBT with p+ diverter increased 1.3 times more than those of the conventional LTIGBT. Because the p+ diverter region of the proposed device was enclosed trench oxide layer, the electric field moved toward trench-oxide layer. The latch-up current densities of the conventional LTIGBT and LTIGBT with p+ diverter were 540 A/cm2, and 1453 A/cm2, respectively. The enhanced latch-up capability of the LTEIGBT was obtained through holes in the current directly reaching the cathode via the p+ divert region and p+ cathode layer beneath n+ cathode layer.
UR - http://www.scopus.com/inward/record.url?scp=84966534278&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84966534278&partnerID=8YFLogxK
U2 - 10.1109/ICSICT.2001.981442
DO - 10.1109/ICSICT.2001.981442
M3 - Conference contribution
AN - SCOPUS:84966534278
VL - 1
SP - 139
EP - 142
BT - 2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
ER -