A novel low-loss wafer-level packaging of the RF-MEMS devices

Yun Kwon Park, Heung Woo Park, Duck Jung Lee, Jung ho Park, In Sang Song, Chung Woo Kim, Ci Moo Song, Yun-Hi Lee, Chul Ju Kim, Byeong Kwon Ju

Research output: Chapter in Book/Report/Conference proceedingConference contribution

41 Citations (Scopus)

Abstract

In this work, the flip-chip method was used for packaging of the RF-MEMS switch on the quartz substrate with low losses. The 4-inch Pyrex glass was used as a package substrate and it was punched with airblast with 250 μm diameter holes. The Cr/Au seed layer was deposited on it and the vias were filled with plating gold. After forming the molds on the holes with thick photoresist, the bumps were plated on holes. The package substrate was bonded with the quartz substrate with the B-stage epoxy. The loss of the overall package structure was tested with a network analyzer and was within - 0.05 dB. This structure can be used for wafer level packaging of not only the RF-MEMS devices but also the MEMS devices.

Original languageEnglish
Title of host publicationProceedings of the IEEE Micro Electro Mechanical Systems (MEMS)
Pages681-684
Number of pages4
Publication statusPublished - 2002 Jan 1
Event15th IEEE International Conference on Micro Electro Mechanical Systems MEMS 2002 - Las Vegas, NV, United States
Duration: 2002 Jan 202002 Jan 24

Other

Other15th IEEE International Conference on Micro Electro Mechanical Systems MEMS 2002
CountryUnited States
CityLas Vegas, NV
Period02/1/2002/1/24

Fingerprint

MEMS
Packaging
Substrates
Quartz
Gold plating
Electric network analyzers
Molds
Photoresists
Seed
Switches
Glass

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering
  • Mechanical Engineering

Cite this

Park, Y. K., Park, H. W., Lee, D. J., Park, J. H., Song, I. S., Kim, C. W., ... Ju, B. K. (2002). A novel low-loss wafer-level packaging of the RF-MEMS devices. In Proceedings of the IEEE Micro Electro Mechanical Systems (MEMS) (pp. 681-684)

A novel low-loss wafer-level packaging of the RF-MEMS devices. / Park, Yun Kwon; Park, Heung Woo; Lee, Duck Jung; Park, Jung ho; Song, In Sang; Kim, Chung Woo; Song, Ci Moo; Lee, Yun-Hi; Kim, Chul Ju; Ju, Byeong Kwon.

Proceedings of the IEEE Micro Electro Mechanical Systems (MEMS). 2002. p. 681-684.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Park, YK, Park, HW, Lee, DJ, Park, JH, Song, IS, Kim, CW, Song, CM, Lee, Y-H, Kim, CJ & Ju, BK 2002, A novel low-loss wafer-level packaging of the RF-MEMS devices. in Proceedings of the IEEE Micro Electro Mechanical Systems (MEMS). pp. 681-684, 15th IEEE International Conference on Micro Electro Mechanical Systems MEMS 2002, Las Vegas, NV, United States, 02/1/20.
Park YK, Park HW, Lee DJ, Park JH, Song IS, Kim CW et al. A novel low-loss wafer-level packaging of the RF-MEMS devices. In Proceedings of the IEEE Micro Electro Mechanical Systems (MEMS). 2002. p. 681-684
Park, Yun Kwon ; Park, Heung Woo ; Lee, Duck Jung ; Park, Jung ho ; Song, In Sang ; Kim, Chung Woo ; Song, Ci Moo ; Lee, Yun-Hi ; Kim, Chul Ju ; Ju, Byeong Kwon. / A novel low-loss wafer-level packaging of the RF-MEMS devices. Proceedings of the IEEE Micro Electro Mechanical Systems (MEMS). 2002. pp. 681-684
@inproceedings{50b2849560004940b037d79471674a6e,
title = "A novel low-loss wafer-level packaging of the RF-MEMS devices",
abstract = "In this work, the flip-chip method was used for packaging of the RF-MEMS switch on the quartz substrate with low losses. The 4-inch Pyrex glass was used as a package substrate and it was punched with airblast with 250 μm diameter holes. The Cr/Au seed layer was deposited on it and the vias were filled with plating gold. After forming the molds on the holes with thick photoresist, the bumps were plated on holes. The package substrate was bonded with the quartz substrate with the B-stage epoxy. The loss of the overall package structure was tested with a network analyzer and was within - 0.05 dB. This structure can be used for wafer level packaging of not only the RF-MEMS devices but also the MEMS devices.",
author = "Park, {Yun Kwon} and Park, {Heung Woo} and Lee, {Duck Jung} and Park, {Jung ho} and Song, {In Sang} and Kim, {Chung Woo} and Song, {Ci Moo} and Yun-Hi Lee and Kim, {Chul Ju} and Ju, {Byeong Kwon}",
year = "2002",
month = "1",
day = "1",
language = "English",
pages = "681--684",
booktitle = "Proceedings of the IEEE Micro Electro Mechanical Systems (MEMS)",

}

TY - GEN

T1 - A novel low-loss wafer-level packaging of the RF-MEMS devices

AU - Park, Yun Kwon

AU - Park, Heung Woo

AU - Lee, Duck Jung

AU - Park, Jung ho

AU - Song, In Sang

AU - Kim, Chung Woo

AU - Song, Ci Moo

AU - Lee, Yun-Hi

AU - Kim, Chul Ju

AU - Ju, Byeong Kwon

PY - 2002/1/1

Y1 - 2002/1/1

N2 - In this work, the flip-chip method was used for packaging of the RF-MEMS switch on the quartz substrate with low losses. The 4-inch Pyrex glass was used as a package substrate and it was punched with airblast with 250 μm diameter holes. The Cr/Au seed layer was deposited on it and the vias were filled with plating gold. After forming the molds on the holes with thick photoresist, the bumps were plated on holes. The package substrate was bonded with the quartz substrate with the B-stage epoxy. The loss of the overall package structure was tested with a network analyzer and was within - 0.05 dB. This structure can be used for wafer level packaging of not only the RF-MEMS devices but also the MEMS devices.

AB - In this work, the flip-chip method was used for packaging of the RF-MEMS switch on the quartz substrate with low losses. The 4-inch Pyrex glass was used as a package substrate and it was punched with airblast with 250 μm diameter holes. The Cr/Au seed layer was deposited on it and the vias were filled with plating gold. After forming the molds on the holes with thick photoresist, the bumps were plated on holes. The package substrate was bonded with the quartz substrate with the B-stage epoxy. The loss of the overall package structure was tested with a network analyzer and was within - 0.05 dB. This structure can be used for wafer level packaging of not only the RF-MEMS devices but also the MEMS devices.

UR - http://www.scopus.com/inward/record.url?scp=0036118192&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036118192&partnerID=8YFLogxK

M3 - Conference contribution

SP - 681

EP - 684

BT - Proceedings of the IEEE Micro Electro Mechanical Systems (MEMS)

ER -