A novel trench-type LIGBT having superior electrical characteristics for smart power IC

Ey Goo Kang; Seung Hyun Moon; Sangsig Kim; Man Young Sung

A novel trench-type LIGBT having superior electrical characteristics for smart power IC

Ey Goo Kang, Seung Hyun Moon, Sangsig Kim, Man Young Sung

Research output: Contribution to conference › Paper › peer-review

Abstract

A new small sized Lateral Trench Electrode Insulated Gate Bipolar Transistor (LTEIGBT) was proposed to improve the characteristics of conventional Lateral IGBT (LIGBT) and Lateral Trench gate IGBT (LTIGBT). The entire electrode of LTEIGBT was replace with trench-type electrode. The LTEIGBT was designed so that the width of device is no more than 19μm. The Latch-up current densities of LIGBT, LTIGBT and LTEIGBT were 120A/cm², 540A/cm², and 1230A/cm², respectively. The enhanced latch-up capability of the LTEIGBT was obtained through holes in the current directly reaching the cathode via the p+ cathode layer underneath n+ cathode layer. The forward blocking voltage of the LTEIGBT was 130V. Conventional LIGBT and LTIGBT of the same size were no more than 60V and 100V, respectively. Because the proposed device was constructed of trench-type electrodes, the electric field moved toward trench-oxide layer, and punch through breakdown of LTEIGBT is occurred late.

Original language	English
Pages	811-815
Number of pages	5
Publication status	Published - 2001
Event	27th Annual Conference of the IEEE Industrial Electronics Society IECON'2001 - Denver, CO, United States Duration: 2001 Nov 29 → 2001 Dec 2

Other

Other	27th Annual Conference of the IEEE Industrial Electronics Society IECON'2001
Country/Territory	United States
City	Denver, CO
Period	01/11/29 → 01/12/2

ASJC Scopus subject areas

Control and Systems Engineering
Electrical and Electronic Engineering

Cite this

@conference{54811f89c6794d72a5c00a9e500a995d,

title = "A novel trench-type LIGBT having superior electrical characteristics for smart power IC",

abstract = "A new small sized Lateral Trench Electrode Insulated Gate Bipolar Transistor (LTEIGBT) was proposed to improve the characteristics of conventional Lateral IGBT (LIGBT) and Lateral Trench gate IGBT (LTIGBT). The entire electrode of LTEIGBT was replace with trench-type electrode. The LTEIGBT was designed so that the width of device is no more than 19μm. The Latch-up current densities of LIGBT, LTIGBT and LTEIGBT were 120A/cm2, 540A/cm2, and 1230A/cm2, respectively. The enhanced latch-up capability of the LTEIGBT was obtained through holes in the current directly reaching the cathode via the p+ cathode layer underneath n+ cathode layer. The forward blocking voltage of the LTEIGBT was 130V. Conventional LIGBT and LTIGBT of the same size were no more than 60V and 100V, respectively. Because the proposed device was constructed of trench-type electrodes, the electric field moved toward trench-oxide layer, and punch through breakdown of LTEIGBT is occurred late.",

author = "Kang, {Ey Goo} and Moon, {Seung Hyun} and Sangsig Kim and Sung, {Man Young}",

year = "2001",

language = "English",

pages = "811--815",

note = "27th Annual Conference of the IEEE Industrial Electronics Society IECON'2001 ; Conference date: 29-11-2001 Through 02-12-2001",

}

TY - CONF

T1 - A novel trench-type LIGBT having superior electrical characteristics for smart power IC

AU - Kang, Ey Goo

AU - Moon, Seung Hyun

AU - Kim, Sangsig

AU - Sung, Man Young

PY - 2001

Y1 - 2001

N2 - A new small sized Lateral Trench Electrode Insulated Gate Bipolar Transistor (LTEIGBT) was proposed to improve the characteristics of conventional Lateral IGBT (LIGBT) and Lateral Trench gate IGBT (LTIGBT). The entire electrode of LTEIGBT was replace with trench-type electrode. The LTEIGBT was designed so that the width of device is no more than 19μm. The Latch-up current densities of LIGBT, LTIGBT and LTEIGBT were 120A/cm2, 540A/cm2, and 1230A/cm2, respectively. The enhanced latch-up capability of the LTEIGBT was obtained through holes in the current directly reaching the cathode via the p+ cathode layer underneath n+ cathode layer. The forward blocking voltage of the LTEIGBT was 130V. Conventional LIGBT and LTIGBT of the same size were no more than 60V and 100V, respectively. Because the proposed device was constructed of trench-type electrodes, the electric field moved toward trench-oxide layer, and punch through breakdown of LTEIGBT is occurred late.

AB - A new small sized Lateral Trench Electrode Insulated Gate Bipolar Transistor (LTEIGBT) was proposed to improve the characteristics of conventional Lateral IGBT (LIGBT) and Lateral Trench gate IGBT (LTIGBT). The entire electrode of LTEIGBT was replace with trench-type electrode. The LTEIGBT was designed so that the width of device is no more than 19μm. The Latch-up current densities of LIGBT, LTIGBT and LTEIGBT were 120A/cm2, 540A/cm2, and 1230A/cm2, respectively. The enhanced latch-up capability of the LTEIGBT was obtained through holes in the current directly reaching the cathode via the p+ cathode layer underneath n+ cathode layer. The forward blocking voltage of the LTEIGBT was 130V. Conventional LIGBT and LTIGBT of the same size were no more than 60V and 100V, respectively. Because the proposed device was constructed of trench-type electrodes, the electric field moved toward trench-oxide layer, and punch through breakdown of LTEIGBT is occurred late.

UR - http://www.scopus.com/inward/record.url?scp=0035689964&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035689964&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0035689964

SP - 811

EP - 815

T2 - 27th Annual Conference of the IEEE Industrial Electronics Society IECON'2001

Y2 - 29 November 2001 through 2 December 2001

ER -

A novel trench-type LIGBT having superior electrical characteristics for smart power IC

Abstract

Other

ASJC Scopus subject areas

Other files and links

Fingerprint

Cite this