A novel trench-type LIGBT having superior electrical characteristics for smart power IC

Ey Goo Kang, Seung Hyun Moon, Sangsig Kim, Man Young Sung

Research output: Contribution to conferencePaper

Abstract

A new small sized Lateral Trench Electrode Insulated Gate Bipolar Transistor (LTEIGBT) was proposed to improve the characteristics of conventional Lateral IGBT (LIGBT) and Lateral Trench gate IGBT (LTIGBT). The entire electrode of LTEIGBT was replace with trench-type electrode. The LTEIGBT was designed so that the width of device is no more than 19μm. The Latch-up current densities of LIGBT, LTIGBT and LTEIGBT were 120A/cm2, 540A/cm2, and 1230A/cm2, respectively. The enhanced latch-up capability of the LTEIGBT was obtained through holes in the current directly reaching the cathode via the p+ cathode layer underneath n+ cathode layer. The forward blocking voltage of the LTEIGBT was 130V. Conventional LIGBT and LTIGBT of the same size were no more than 60V and 100V, respectively. Because the proposed device was constructed of trench-type electrodes, the electric field moved toward trench-oxide layer, and punch through breakdown of LTEIGBT is occurred late.

Original languageEnglish
Pages811-815
Number of pages5
Publication statusPublished - 2001
Event27th Annual Conference of the IEEE Industrial Electronics Society IECON'2001 - Denver, CO, United States
Duration: 2001 Nov 292001 Dec 2

Other

Other27th Annual Conference of the IEEE Industrial Electronics Society IECON'2001
CountryUnited States
CityDenver, CO
Period01/11/2901/12/2

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

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    Kang, E. G., Moon, S. H., Kim, S., & Sung, M. Y. (2001). A novel trench-type LIGBT having superior electrical characteristics for smart power IC. 811-815. Paper presented at 27th Annual Conference of the IEEE Industrial Electronics Society IECON'2001, Denver, CO, United States.