A novel type of spin injection barrier in a GaAs based two-dimensional electron gas system

H. C. Koo, Hyunjung Yi, J. D. Song, J. B. Ko, Joonyeon Chang, S. H. Han

Research output: Contribution to journalArticle

Abstract

A low transmission barrier is a crucial factor for the efficient spin injection, and an oxide barrier is commonly used for the insulator between the ferromagnet and the semiconductor. After heat treatment at the furnace, an AlAs layer was converted to an aluminum oxide layer, and arsenic gas was evaporated. This new method of forming spin injection barrier on the two-dimensional electron gas (2-DEG) system is very efficient to obtain tunneling behavior.

Original languageEnglish
Pages (from-to)2589-2591
Number of pages3
JournalIEEE Transactions on Magnetics
Volume41
Issue number10
DOIs
Publication statusPublished - 2005 Oct

Keywords

  • AlAs
  • Aluminum oxide
  • Furnace
  • Low transmission barrier
  • Spin injection

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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