A novel type of spin injection barrier in a GaAs based two-dimensional electron gas system

Hyun Cheol Koo, Hyunjung Yi, J. D. Song, J. B. Ko, Joonyeon Chang, S. H. Han

Research output: Contribution to journalArticle

Abstract

A low transmission barrier is a crucial factor for the efficient spin injection, and an oxide barrier is commonly used for the insulator between the ferromagnet and the semiconductor. After heat treatment at the furnace, an AlAs layer was converted to an aluminum oxide layer, and arsenic gas was evaporated. This new method of forming spin injection barrier on the two-dimensional electron gas (2-DEG) system is very efficient to obtain tunneling behavior.

Original languageEnglish
Pages (from-to)2589-2591
Number of pages3
JournalIEEE Transactions on Magnetics
Volume41
Issue number10
DOIs
Publication statusPublished - 2005 Oct 1
Externally publishedYes

Fingerprint

Two dimensional electron gas
Aluminum Oxide
Arsenic
Oxides
electron gas
Furnaces
Gases
Heat treatment
injection
Semiconductor materials
Aluminum
arsenic
furnaces
heat treatment
aluminum oxides
insulators
oxides
gases
gallium arsenide

Keywords

  • AlAs
  • Aluminum oxide
  • Furnace
  • Low transmission barrier
  • Spin injection

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

Cite this

A novel type of spin injection barrier in a GaAs based two-dimensional electron gas system. / Koo, Hyun Cheol; Yi, Hyunjung; Song, J. D.; Ko, J. B.; Chang, Joonyeon; Han, S. H.

In: IEEE Transactions on Magnetics, Vol. 41, No. 10, 01.10.2005, p. 2589-2591.

Research output: Contribution to journalArticle

Koo, Hyun Cheol ; Yi, Hyunjung ; Song, J. D. ; Ko, J. B. ; Chang, Joonyeon ; Han, S. H. / A novel type of spin injection barrier in a GaAs based two-dimensional electron gas system. In: IEEE Transactions on Magnetics. 2005 ; Vol. 41, No. 10. pp. 2589-2591.
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