A p-n heterojunction diode constructed with A p-Si nanowire and an n-ZnO nanoparticle thin-film by dielectrophoresis

Kwangeun Kim, Myeongwon Lee, Junggwon Yun, Sangsig Kim

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Newly-developed fabrication of a p-n heterojunction diode constructed with a p-Si nanowire (NW) and an n-ZnO nanoparticle (NP) thin-film by the dielectrophoresis (DEP) technique is demonstrated in this study. With the bias of 20 Vp-p at the input frequency of 1 MHz, the most efficient assembly of the n-ZnO NPs is shown for the fabrication of the p-n heterojunction diode with a p-Si NW. The p-n heterojunction diode fabricated in this study represents current rectifying characteristics with the turn on voltage of 1.1 V. The diode can be applied to the fabrication of optoelectrical devices such as photodetectors, light-emitting diodes (LEDs), or solar cells based on the high conductivity of the NW and the high surface to volume ratio of the NP thin film.

Original languageEnglish
Pages (from-to)105-108
Number of pages4
JournalTransactions of the Korean Institute of Electrical Engineers
Issue number1
Publication statusPublished - 2011 Jan 1



  • Dielectrophoresis
  • Nanoparticle
  • Nanowire
  • P-n heterojunction
  • Si
  • Zno

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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