A physics-based, SPICE (simulation program with integrated circuit emphasis)-compatible non-quasi-static MOS (metal-oxide-semiconductor) transient model based on the collocation method

Sung Woo Hwang, Tae Woong Yoon, Dae Han Kwon, Yun Seop Yu, Ki Hyuk Kim

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

The collocation method has been applied to derive a new SPICE (Simulation Program with Integrated Circuit Emphasis)-compatible non-quasi-static MOS (metal-oxide-semiconductor) transient model. Contrasting to the conventional approximation methods, the collocation method is simple for the model derivation and efficient in optimizing the variables of the continuity equation. The derived model is fully physics-based in that all the transient currents are directly expressed by only physically meaningful, optimized quantities. The model adequately predicts transient currents in the bias region such as the weak inversion region where conventional models show numerical difficulties.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume37
Issue number2 PART A
Publication statusPublished - 1998 Feb 1

Fingerprint

collocation
metal oxide semiconductors
integrated circuits
Integrated circuits
Physics
physics
Metals
simulation
continuity equation
derivation
Oxide semiconductors
inversions
approximation

Keywords

  • Collocation
  • MOS
  • Non-quasi-static
  • Transient model

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

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abstract = "The collocation method has been applied to derive a new SPICE (Simulation Program with Integrated Circuit Emphasis)-compatible non-quasi-static MOS (metal-oxide-semiconductor) transient model. Contrasting to the conventional approximation methods, the collocation method is simple for the model derivation and efficient in optimizing the variables of the continuity equation. The derived model is fully physics-based in that all the transient currents are directly expressed by only physically meaningful, optimized quantities. The model adequately predicts transient currents in the bias region such as the weak inversion region where conventional models show numerical difficulties.",
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AU - Yoon, Tae Woong

AU - Kwon, Dae Han

AU - Yu, Yun Seop

AU - Kim, Ki Hyuk

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N2 - The collocation method has been applied to derive a new SPICE (Simulation Program with Integrated Circuit Emphasis)-compatible non-quasi-static MOS (metal-oxide-semiconductor) transient model. Contrasting to the conventional approximation methods, the collocation method is simple for the model derivation and efficient in optimizing the variables of the continuity equation. The derived model is fully physics-based in that all the transient currents are directly expressed by only physically meaningful, optimized quantities. The model adequately predicts transient currents in the bias region such as the weak inversion region where conventional models show numerical difficulties.

AB - The collocation method has been applied to derive a new SPICE (Simulation Program with Integrated Circuit Emphasis)-compatible non-quasi-static MOS (metal-oxide-semiconductor) transient model. Contrasting to the conventional approximation methods, the collocation method is simple for the model derivation and efficient in optimizing the variables of the continuity equation. The derived model is fully physics-based in that all the transient currents are directly expressed by only physically meaningful, optimized quantities. The model adequately predicts transient currents in the bias region such as the weak inversion region where conventional models show numerical difficulties.

KW - Collocation

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KW - Non-quasi-static

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