A-plane GaN hydride vapor phase epitaxy on a-plane GaN templates with and without use of TiN intermediate layers

A. Y. Polyakov, A. V. Markov, M. V. Mezhennyi, A. A. Donskov, S. S. Malakhov, A. V. Govorkov, Yu P. Kozlova, V. F. Pavlov, N. B. Smirnov, T. G. Yugova, In-Hwan Lee, J. Han, Q. Sun, S. J. Pearton

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Thick a-plane GaN films were grown by hydride vapor phase epitaxy on a-plane GaN templates prepared by metalorganic chemical vapor deposition (MOCVD) and also on a-plane MOCVD templates using in situ nitridized Ti underlayers. The growth on a-GaN showed improved crystalline quality with increasing hydride vapor phase epitaxy thickness, while MOCVD template quality had little effect. With 30 nm Ti films deposited on the templates and converted to TiN islands by nitridation during growth, the authors obtained thick (350 μm), freestanding a-GaN films detached from the template. Microcathodoluminescence spectra of the growth surface showed intense band edge luminescence at 3.47 eV at 90 K with no defect bands. Spectra taken from the surface turned to the substrate were dominated by stacking fault-related bands at 3.42, 3.3, and 3.0 eV, similar to the spectra of the a-GaN templates. X-ray measurements showed the freestanding a-GaN layers consisted of misoriented large grains of a-GaN with halfwidth for individual grains close to 300-400 arc sec and halfwidth anisotropy with respect to sample rotation around the [11-20] direction.

Original languageEnglish
Pages (from-to)1039-1043
Number of pages5
JournalJournal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume28
Issue number5
DOIs
Publication statusPublished - 2010 Jan 1
Externally publishedYes

Fingerprint

Vapor phase epitaxy
Metallorganic chemical vapor deposition
Hydrides
vapor phase epitaxy
hydrides
templates
metalorganic chemical vapor deposition
Nitridation
Stacking faults
Luminescence
Anisotropy
Crystalline materials
X rays
Defects
Substrates
crystal defects
arcs
luminescence
anisotropy
defects

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Polyakov, A. Y., Markov, A. V., Mezhennyi, M. V., Donskov, A. A., Malakhov, S. S., Govorkov, A. V., ... Pearton, S. J. (2010). A-plane GaN hydride vapor phase epitaxy on a-plane GaN templates with and without use of TiN intermediate layers. Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, 28(5), 1039-1043. https://doi.org/10.1116/1.3491187

A-plane GaN hydride vapor phase epitaxy on a-plane GaN templates with and without use of TiN intermediate layers. / Polyakov, A. Y.; Markov, A. V.; Mezhennyi, M. V.; Donskov, A. A.; Malakhov, S. S.; Govorkov, A. V.; Kozlova, Yu P.; Pavlov, V. F.; Smirnov, N. B.; Yugova, T. G.; Lee, In-Hwan; Han, J.; Sun, Q.; Pearton, S. J.

In: Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, Vol. 28, No. 5, 01.01.2010, p. 1039-1043.

Research output: Contribution to journalArticle

Polyakov, AY, Markov, AV, Mezhennyi, MV, Donskov, AA, Malakhov, SS, Govorkov, AV, Kozlova, YP, Pavlov, VF, Smirnov, NB, Yugova, TG, Lee, I-H, Han, J, Sun, Q & Pearton, SJ 2010, 'A-plane GaN hydride vapor phase epitaxy on a-plane GaN templates with and without use of TiN intermediate layers', Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, vol. 28, no. 5, pp. 1039-1043. https://doi.org/10.1116/1.3491187
Polyakov, A. Y. ; Markov, A. V. ; Mezhennyi, M. V. ; Donskov, A. A. ; Malakhov, S. S. ; Govorkov, A. V. ; Kozlova, Yu P. ; Pavlov, V. F. ; Smirnov, N. B. ; Yugova, T. G. ; Lee, In-Hwan ; Han, J. ; Sun, Q. ; Pearton, S. J. / A-plane GaN hydride vapor phase epitaxy on a-plane GaN templates with and without use of TiN intermediate layers. In: Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 2010 ; Vol. 28, No. 5. pp. 1039-1043.
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AU - Polyakov, A. Y.

AU - Markov, A. V.

AU - Mezhennyi, M. V.

AU - Donskov, A. A.

AU - Malakhov, S. S.

AU - Govorkov, A. V.

AU - Kozlova, Yu P.

AU - Pavlov, V. F.

AU - Smirnov, N. B.

AU - Yugova, T. G.

AU - Lee, In-Hwan

AU - Han, J.

AU - Sun, Q.

AU - Pearton, S. J.

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