A-plane GaN hydride vapor phase epitaxy on a-plane GaN templates with and without use of TiN intermediate layers

A. Y. Polyakov, A. V. Markov, M. V. Mezhennyi, A. A. Donskov, S. S. Malakhov, A. V. Govorkov, Yu P. Kozlova, V. F. Pavlov, N. B. Smirnov, T. G. Yugova, I. H. Lee, J. Han, Q. Sun, S. J. Pearton

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