A pn heterojunction diode constructed with a n -type ZnO nanowire and a p -type HgTe nanoparticle thin film

Hojun Seong, Kyoungah Cho, Sangsig Kim

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

We demonstrate a pn heterojunction diode constructed with a n -type ZnO nanowire (NW) and a p -type HgTe nanoparticle (NP) thin film on a SiO 2 /p-Si substrate. For the pn heterojunction diode, the rectifying characteristics of both the dark current and the photocurrent excited by 633 nm wavelength light were observed, but the photocurrent excited by 325 nm wavelength light possesses Ohmic characteristics. The optoelectronic characteristics of the pn heterojunction diode were compared with those of the ZnO NW and HgTe NP thin film composing it.

Original languageEnglish
Article number043102
JournalApplied Physics Letters
Volume94
Issue number4
DOIs
Publication statusPublished - 2009 Feb 9

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heterojunctions
nanowires
diodes
nanoparticles
photocurrents
thin films
dark current
wavelengths

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

A pn heterojunction diode constructed with a n -type ZnO nanowire and a p -type HgTe nanoparticle thin film. / Seong, Hojun; Cho, Kyoungah; Kim, Sangsig.

In: Applied Physics Letters, Vol. 94, No. 4, 043102, 09.02.2009.

Research output: Contribution to journalArticle

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