A prism coupler technique for characterizing thin film II-VI semiconductor systems

F. C. Peiris, Sang Hoon Lee, U. Bindley, J. K. Furdyna

Research output: Contribution to journalArticle

28 Citations (Scopus)

Abstract

This article has two objectives. First, we determine the indices of refraction n of a series of molecular beam epitaxy-grown Zn1-xCdxSe epilayers using a technique based on coupling of evanescent waves via a prism into a semiconductor film. Highly precise values of n, and their dependence on the alloy composition x, are obtained for photon energies below the band gap of the alloy material. And second, we use these results to demonstrate the usefulness of the prism coupler method as a very reliable, convenient, and accurate tool for simultaneous determination of composition of semiconductor alloys in thin film form (since n depends on composition), and the film thickness. This method determines the film thickness with typical uncertainty of less than 0.5%.

Original languageEnglish
Pages (from-to)5194-5197
Number of pages4
JournalJournal of Applied Physics
Volume84
Issue number9
Publication statusPublished - 1998 Nov 1
Externally publishedYes

Fingerprint

couplers
prisms
film thickness
thin films
evanescent waves
refraction
molecular beam epitaxy
photons
energy

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physics and Astronomy (miscellaneous)

Cite this

A prism coupler technique for characterizing thin film II-VI semiconductor systems. / Peiris, F. C.; Lee, Sang Hoon; Bindley, U.; Furdyna, J. K.

In: Journal of Applied Physics, Vol. 84, No. 9, 01.11.1998, p. 5194-5197.

Research output: Contribution to journalArticle

Peiris, FC, Lee, SH, Bindley, U & Furdyna, JK 1998, 'A prism coupler technique for characterizing thin film II-VI semiconductor systems', Journal of Applied Physics, vol. 84, no. 9, pp. 5194-5197.
Peiris, F. C. ; Lee, Sang Hoon ; Bindley, U. ; Furdyna, J. K. / A prism coupler technique for characterizing thin film II-VI semiconductor systems. In: Journal of Applied Physics. 1998 ; Vol. 84, No. 9. pp. 5194-5197.
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