Abstract
This article has two objectives. First, we determine the indices of refraction n of a series of molecular beam epitaxy-grown Zn1-xCdxSe epilayers using a technique based on coupling of evanescent waves via a prism into a semiconductor film. Highly precise values of n, and their dependence on the alloy composition x, are obtained for photon energies below the band gap of the alloy material. And second, we use these results to demonstrate the usefulness of the prism coupler method as a very reliable, convenient, and accurate tool for simultaneous determination of composition of semiconductor alloys in thin film form (since n depends on composition), and the film thickness. This method determines the film thickness with typical uncertainty of less than 0.5%.
| Original language | English |
|---|---|
| Pages (from-to) | 5194-5197 |
| Number of pages | 4 |
| Journal | Journal of Applied Physics |
| Volume | 84 |
| Issue number | 9 |
| Publication status | Published - 1998 Nov 1 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Physics and Astronomy(all)
- Physics and Astronomy (miscellaneous)
Cite this
A prism coupler technique for characterizing thin film II-VI semiconductor systems. / Peiris, F. C.; Lee, Sang Hoon; Bindley, U.; Furdyna, J. K.
In: Journal of Applied Physics, Vol. 84, No. 9, 01.11.1998, p. 5194-5197.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - A prism coupler technique for characterizing thin film II-VI semiconductor systems
AU - Peiris, F. C.
AU - Lee, Sang Hoon
AU - Bindley, U.
AU - Furdyna, J. K.
PY - 1998/11/1
Y1 - 1998/11/1
N2 - This article has two objectives. First, we determine the indices of refraction n of a series of molecular beam epitaxy-grown Zn1-xCdxSe epilayers using a technique based on coupling of evanescent waves via a prism into a semiconductor film. Highly precise values of n, and their dependence on the alloy composition x, are obtained for photon energies below the band gap of the alloy material. And second, we use these results to demonstrate the usefulness of the prism coupler method as a very reliable, convenient, and accurate tool for simultaneous determination of composition of semiconductor alloys in thin film form (since n depends on composition), and the film thickness. This method determines the film thickness with typical uncertainty of less than 0.5%.
AB - This article has two objectives. First, we determine the indices of refraction n of a series of molecular beam epitaxy-grown Zn1-xCdxSe epilayers using a technique based on coupling of evanescent waves via a prism into a semiconductor film. Highly precise values of n, and their dependence on the alloy composition x, are obtained for photon energies below the band gap of the alloy material. And second, we use these results to demonstrate the usefulness of the prism coupler method as a very reliable, convenient, and accurate tool for simultaneous determination of composition of semiconductor alloys in thin film form (since n depends on composition), and the film thickness. This method determines the film thickness with typical uncertainty of less than 0.5%.
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UR - http://www.scopus.com/inward/citedby.url?scp=0032209207&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0032209207
VL - 84
SP - 5194
EP - 5197
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 9
ER -