A Radiation-Hardened Readout Integrated Circuits for Sensor Systems

Minseong Um, Duckhoon Ro, Ik Joon Chang, Hyung Min Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Radiation-hardened IA and ADC circuits are essential for a safe and efficient sensor system. In this paper, three-op-amp IA and SAR ADC were designed using radiation-hardened techniques and measured and proved to be robust to TID and SEE. Both Radiation-hardened IA and ADC were fabricated in a 65nm CMOS process and measured in an ARTI high-level radiation environment. The proposed IA was able to confirm that the voltage gain was accurate against TID effects in the harsh radiation environment. The proposed ADC obtained 9.59 ENOB at 5.54mW power consumption.

Original languageEnglish
Title of host publication2020 IEEE International Conference on Consumer Electronics - Asia, ICCE-Asia 2020
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728161648
DOIs
Publication statusPublished - 2020 Nov 1
Event2020 IEEE International Conference on Consumer Electronics - Asia, ICCE-Asia 2020 - Seoul, Korea, Republic of
Duration: 2020 Nov 12020 Nov 3

Publication series

Name2020 IEEE International Conference on Consumer Electronics - Asia, ICCE-Asia 2020

Conference

Conference2020 IEEE International Conference on Consumer Electronics - Asia, ICCE-Asia 2020
CountryKorea, Republic of
CitySeoul
Period20/11/120/11/3

Keywords

  • Instrumentation amplifier
  • Radiation-hardened
  • SAR ADC
  • Sensor Readout IC
  • Single event effect
  • Soft error
  • Total ionizing dose

ASJC Scopus subject areas

  • Computer Science Applications
  • Electrical and Electronic Engineering
  • Media Technology
  • Instrumentation

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