A review: Comparison of fabrication and characteristics of flexible reram and multi-insulating graphene oxide layer reram

Dong Kyun Kim, Taeheon Kim, Taehwan Yoon, James Jungho Pak

Research output: Contribution to journalReview article

Abstract

A rapid progress of the next-generation non-volatile memory device has been made in recent years. Metal/insulator/Metal multi-layer structure resistive RAM(ReRAM) has attracted a great deal of attention because it has advantages of simple fabrication, low cost, low power consumption, and low operating voltage. This paper describes the working principle of the ReRAM device, a review of fabrication techniques, and characteristics of flexible ReRAM devices using graphene oxide as an insulating layer and ReRAM devices using multi-layered insulator. The switching characteristics of the above ReRAM devices have been compared. The oxidized graphene could be employed as an insulator of next generation ReRAM devices.

Original languageEnglish
Pages (from-to)1369-1375
Number of pages7
JournalTransactions of the Korean Institute of Electrical Engineers
Volume65
Issue number8
DOIs
Publication statusPublished - 2016 Aug 1

Keywords

  • Graphene oxide
  • MIM
  • ReRAM
  • RESET
  • SET

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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