A review of Ga2O3 materials, processing, and devices

S. J. Pearton, Jiancheng Yang, Patrick H. Cary, F. Ren, Ji Hyun Kim, Marko J. Tadjer, Michael A. Mastro

Research output: Contribution to journalReview article

301 Citations (Scopus)

Abstract

Gallium oxide (Ga2O3) is emerging as a viable candidate for certain classes of power electronics, solar blind UV photodetectors, solar cells, and sensors with capabilities beyond existing technologies due to its large bandgap. It is usually reported that there are five different polymorphs of Ga2O3, namely, the monoclinic (β-Ga2O3), rhombohedral (α), defective spinel (γ), cubic (δ), or orthorhombic (ϵ) structures. Of these, the β-polymorph is the stable form under normal conditions and has been the most widely studied and utilized. Since melt growth techniques can be used to grow bulk crystals of β-GaO3, the cost of producing larger area, uniform substrates is potentially lower compared to the vapor growth techniques used to manufacture bulk crystals of GaN and SiC. The performance of technologically important high voltage rectifiers and enhancement-mode Metal-Oxide Field Effect Transistors benefit from the larger critical electric field of β-Ga2O3 relative to either SiC or GaN. However, the absence of clear demonstrations of p-type doping in Ga2O3, which may be a fundamental issue resulting from the band structure, makes it very difficult to simultaneously achieve low turn-on voltages and ultra-high breakdown. The purpose of this review is to summarize recent advances in the growth, processing, and device performance of the most widely studied polymorph, β-Ga2O3. The role of defects and impurities on the transport and optical properties of bulk, epitaxial, and nanostructures material, the difficulty in p-type doping, and the development of processing techniques like etching, contact formation, dielectrics for gate formation, and passivation are discussed. Areas where continued development is needed to fully exploit the properties of Ga2O3 are identified.

Original languageEnglish
Article number011301
JournalApplied Physics Reviews
Volume5
Issue number1
DOIs
Publication statusPublished - 2018 Mar 1

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solar sensors
gallium oxides
rectifiers
passivity
crystals
spinel
metal oxides
photometers
high voltages
emerging
field effect transistors
solar cells
transport properties
breakdown
etching
vapors
costs
optical properties
impurities
electric fields

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Pearton, S. J., Yang, J., Cary, P. H., Ren, F., Kim, J. H., Tadjer, M. J., & Mastro, M. A. (2018). A review of Ga2O3 materials, processing, and devices. Applied Physics Reviews, 5(1), [011301]. https://doi.org/10.1063/1.5006941

A review of Ga2O3 materials, processing, and devices. / Pearton, S. J.; Yang, Jiancheng; Cary, Patrick H.; Ren, F.; Kim, Ji Hyun; Tadjer, Marko J.; Mastro, Michael A.

In: Applied Physics Reviews, Vol. 5, No. 1, 011301, 01.03.2018.

Research output: Contribution to journalReview article

Pearton, SJ, Yang, J, Cary, PH, Ren, F, Kim, JH, Tadjer, MJ & Mastro, MA 2018, 'A review of Ga2O3 materials, processing, and devices', Applied Physics Reviews, vol. 5, no. 1, 011301. https://doi.org/10.1063/1.5006941
Pearton SJ, Yang J, Cary PH, Ren F, Kim JH, Tadjer MJ et al. A review of Ga2O3 materials, processing, and devices. Applied Physics Reviews. 2018 Mar 1;5(1). 011301. https://doi.org/10.1063/1.5006941
Pearton, S. J. ; Yang, Jiancheng ; Cary, Patrick H. ; Ren, F. ; Kim, Ji Hyun ; Tadjer, Marko J. ; Mastro, Michael A. / A review of Ga2O3 materials, processing, and devices. In: Applied Physics Reviews. 2018 ; Vol. 5, No. 1.
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