A Ru-Pt alloy electrode to suppress leakage currents of dynamic random-access memory capacitors

Jung Joon Pyeon, Cheol Jin Cho, Doo Seok Jeong, Jin Sang Kim, Chong-Yun Kang, Seong Keun Kim

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Rutile TiO2, a high temperature phase, has attracted interest as a capacitor dielectric in dynamic random-access memories (DRAMs). Despite its high dielectric constant of >80, large leakage currents caused by a low Schottky barrier height at the TiO2/electrode interface have hindered the use of rutile TiO2 as a commercial DRAM capacitor. Here, we propose a new Ru-Pt alloy electrode to increase the height of the Schottky barrier. The Ru-Pt mixed layer was grown by atomic layer deposition. The atomic ratio of Ru/Pt varied in the entire range from 100 at.% Ru to 100 at.% Pt. Rutile TiO2 films were inductively formed only on the Ru-Pt layer containing ≤43 at.% Pt, while anatase TiO2 films with a relatively low dielectric constant (∼40) were formed at Pt compositions > 63 at.%. The Ru-Pt (40-50 at.%) layer also attained an increase in work function of ∼0.3-0.4 eV, leading to an improvement in the leakage currents of the TiO2/Ru-Pt capacitor. These findings suggested that a Ru-Pt layer could serve as a promising electrode for next-generation DRAM capacitors.

Original languageEnglish
Article number455202
JournalNanotechnology
Volume29
Issue number45
DOIs
Publication statusPublished - 2018 Sep 14

Keywords

  • capacitor
  • DRAM
  • RuPt electrode
  • rutile TiO2

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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