A short-channel TFT of amorphous In-Ga-Zn-O semiconductor pixel structure with advanced five-mask process

Joon Young Yang, Sung Hoon Jung, Chang Seung Woo, Ju Hyun Lee, Jung ho Park, Myung Chul Jun, In Byeong Kang, Sang Deog Yeo

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We propose a new five-mask etch-stopper amorphous In-Ga-Zn-O semiconductor pixel structure for a high-resolution advanced-high-performance in-plane-switching (AH-IPS) display device. A short-channel length (under \(5~\mu \) m) thin-film transistor (TFT) was successfully fabricated using a self-aligned damage preventing layer. The linear field effect mobility of the 4- \(\mu \) m channel length TFT was 10.4 cm \(^{2}\) /V \(\cdot \) s. Using the proposed structure, we successfully fabricated a 9.7-in AH-IPS quad-extended graphics array liquid-crystal displays panel.

Original languageEnglish
Article number6895293
Pages (from-to)1043-1045
Number of pages3
JournalIEEE Electron Device Letters
Volume35
Issue number10
DOIs
Publication statusPublished - 2014 Oct 1

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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    Yang, J. Y., Jung, S. H., Woo, C. S., Lee, J. H., Park, J. H., Jun, M. C., Kang, I. B., & Yeo, S. D. (2014). A short-channel TFT of amorphous In-Ga-Zn-O semiconductor pixel structure with advanced five-mask process. IEEE Electron Device Letters, 35(10), 1043-1045. [6895293]. https://doi.org/10.1109/LED.2014.2349902