A short-channel TFT of amorphous In-Ga-Zn-O semiconductor pixel structure with advanced five-mask process

Joon Young Yang, Sung Hoon Jung, Chang Seung Woo, Ju Hyun Lee, Jung ho Park, Myung Chul Jun, In Byeong Kang, Sang Deog Yeo

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We propose a new five-mask etch-stopper amorphous In-Ga-Zn-O semiconductor pixel structure for a high-resolution advanced-high-performance in-plane-switching (AH-IPS) display device. A short-channel length (under \(5~\mu \) m) thin-film transistor (TFT) was successfully fabricated using a self-aligned damage preventing layer. The linear field effect mobility of the 4- \(\mu \) m channel length TFT was 10.4 cm \(^{2}\) /V \(\cdot \) s. Using the proposed structure, we successfully fabricated a 9.7-in AH-IPS quad-extended graphics array liquid-crystal displays panel.

Original languageEnglish
Article number6895293
Pages (from-to)1043-1045
Number of pages3
JournalIEEE Electron Device Letters
Volume35
Issue number10
DOIs
Publication statusPublished - 2014 Oct 1

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Thin film transistors
Masks
Pixels
Semiconductor materials
Liquid crystal displays
Display devices
Elvitegravir, Cobicistat, Emtricitabine, Tenofovir Disoproxil Fumarate Drug Combination

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

A short-channel TFT of amorphous In-Ga-Zn-O semiconductor pixel structure with advanced five-mask process. / Yang, Joon Young; Jung, Sung Hoon; Woo, Chang Seung; Lee, Ju Hyun; Park, Jung ho; Jun, Myung Chul; Kang, In Byeong; Yeo, Sang Deog.

In: IEEE Electron Device Letters, Vol. 35, No. 10, 6895293, 01.10.2014, p. 1043-1045.

Research output: Contribution to journalArticle

Yang, Joon Young ; Jung, Sung Hoon ; Woo, Chang Seung ; Lee, Ju Hyun ; Park, Jung ho ; Jun, Myung Chul ; Kang, In Byeong ; Yeo, Sang Deog. / A short-channel TFT of amorphous In-Ga-Zn-O semiconductor pixel structure with advanced five-mask process. In: IEEE Electron Device Letters. 2014 ; Vol. 35, No. 10. pp. 1043-1045.
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