A-Si

H/c-Si heterojunction solar cell performances using 50 μm thin wafer substrate

Jun Yong Song, Jang Hoon Choi, Dae Young Jeong, Hee Eun Song, Donghwan Kim, Jeong Chul Lee

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

In this study, the influence on the surface passivation properties of crystalline silicon according to silicon wafer thickness, and the correlation with a-Si:H/c-Si heterojunction solar cell performances were investigated. The wafers passivated by p(n)-doped a-Si:H layers show poor passivation properties because of the doping elements, such as boron(B) and phosphorous(P), which result in a low minority carrier lifetime (MCLT). A decrease in open circuit voltage (Voc) was observed when the wafer thickness was thinned from 170 μm to 50 μm. On the other hand, wafers incorporating intrinsic (i) a-Si:H as a passivation layer showed high quality passivation of a-Si:H/c-Si. The implied Voc of the ITO/p a-Si:H/i a-Si:H/n c-Si wafer/ i a-Si:H/n a-Si:H/ITO stacked layers was 0.715 V for 50 μm c-Si substrate, and 0.704 V for 170 μm c-Si. The Voc in the heterojunction solar cells increased with decreases in the substrate thickness. The high quality passivation property on the c-Si led to an increasing of Voc in the thinner wafer. Short circuit current decreased as the substrate became thinner because of the low optical absorption for long wavelength light. In this paper, we show that high quality passivation of c-Si plays a role in heterojunction solar cells and is important in the development of thinner wafer technology.

Original languageEnglish
Pages (from-to)35-40
Number of pages6
JournalKorean Journal of Materials Research
Volume23
Issue number1
DOIs
Publication statusPublished - 2013 Jan 1

Fingerprint

Passivation
Heterojunctions
Solar cells
Substrates
Boron
Carrier lifetime
Silicon
Open circuit voltage
Silicon wafers
Chemical elements
Short circuit currents
Light absorption
Doping (additives)
Crystalline materials
Wavelength

Keywords

  • a-Si:H
  • Heterojunction
  • Passivation
  • Solar cells
  • Thin wafer

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

A-Si : H/c-Si heterojunction solar cell performances using 50 μm thin wafer substrate. / Song, Jun Yong; Choi, Jang Hoon; Jeong, Dae Young; Song, Hee Eun; Kim, Donghwan; Lee, Jeong Chul.

In: Korean Journal of Materials Research, Vol. 23, No. 1, 01.01.2013, p. 35-40.

Research output: Contribution to journalArticle

Song, Jun Yong ; Choi, Jang Hoon ; Jeong, Dae Young ; Song, Hee Eun ; Kim, Donghwan ; Lee, Jeong Chul. / A-Si : H/c-Si heterojunction solar cell performances using 50 μm thin wafer substrate. In: Korean Journal of Materials Research. 2013 ; Vol. 23, No. 1. pp. 35-40.
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abstract = "In this study, the influence on the surface passivation properties of crystalline silicon according to silicon wafer thickness, and the correlation with a-Si:H/c-Si heterojunction solar cell performances were investigated. The wafers passivated by p(n)-doped a-Si:H layers show poor passivation properties because of the doping elements, such as boron(B) and phosphorous(P), which result in a low minority carrier lifetime (MCLT). A decrease in open circuit voltage (Voc) was observed when the wafer thickness was thinned from 170 μm to 50 μm. On the other hand, wafers incorporating intrinsic (i) a-Si:H as a passivation layer showed high quality passivation of a-Si:H/c-Si. The implied Voc of the ITO/p a-Si:H/i a-Si:H/n c-Si wafer/ i a-Si:H/n a-Si:H/ITO stacked layers was 0.715 V for 50 μm c-Si substrate, and 0.704 V for 170 μm c-Si. The Voc in the heterojunction solar cells increased with decreases in the substrate thickness. The high quality passivation property on the c-Si led to an increasing of Voc in the thinner wafer. Short circuit current decreased as the substrate became thinner because of the low optical absorption for long wavelength light. In this paper, we show that high quality passivation of c-Si plays a role in heterojunction solar cells and is important in the development of thinner wafer technology.",
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AB - In this study, the influence on the surface passivation properties of crystalline silicon according to silicon wafer thickness, and the correlation with a-Si:H/c-Si heterojunction solar cell performances were investigated. The wafers passivated by p(n)-doped a-Si:H layers show poor passivation properties because of the doping elements, such as boron(B) and phosphorous(P), which result in a low minority carrier lifetime (MCLT). A decrease in open circuit voltage (Voc) was observed when the wafer thickness was thinned from 170 μm to 50 μm. On the other hand, wafers incorporating intrinsic (i) a-Si:H as a passivation layer showed high quality passivation of a-Si:H/c-Si. The implied Voc of the ITO/p a-Si:H/i a-Si:H/n c-Si wafer/ i a-Si:H/n a-Si:H/ITO stacked layers was 0.715 V for 50 μm c-Si substrate, and 0.704 V for 170 μm c-Si. The Voc in the heterojunction solar cells increased with decreases in the substrate thickness. The high quality passivation property on the c-Si led to an increasing of Voc in the thinner wafer. Short circuit current decreased as the substrate became thinner because of the low optical absorption for long wavelength light. In this paper, we show that high quality passivation of c-Si plays a role in heterojunction solar cells and is important in the development of thinner wafer technology.

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