A simulation study on the electrical structure of interdigitated back-contact silicon solar cells

Min Gu Kang, Hee eun Song, Soo Min Kim, Donghwan Kim

Research output: Contribution to journalArticle

Abstract

In this paper, a simulation for interdigitated back-contact (IBC) silicon solar cells was performed by using Silvaco TCAD ATLAS to investigate the cell’s electrical properties. The impacts of various parameters, including the depth of the front surface field(FSF), the FSF peak doping concentration, the depths of the emitter and the back surface field(BSF), the peak doping concentrations of the emitter and BSF, the base doping, and the bulk lifetime on the output characteristics like the light current-voltage curves and the internal quantum efficiency of the IBC solar cell, were investigated. The light absorption was determined by adjusting the antireflection coating and the Al thickness. The FSF must be thin and have a low doping concentration for high-efficiency IBC cells. If the conversion efficiency is to be improved, a thick emitter and a high doping concentration are needed. Because of the low resistivity of the Si substrate, the series resistance was reduced, but recombination was increased. With a high-resistivity Si substrate, the opposite trends were observed. By counter-balancing the series resistance and the recombination, we determined by simulation that the optimized resistivity for the IBC cells was 1 Ω·cm. Because all metal electrodes in the IBC cells are located on the back side, a higher minority carrier lifetime showed a higher efficiency. After the various parameters had been optimized, texturing and surface recombination were added into the simulation. The simulated IBC cells showed a short-circuit current density of 42.89 mA/cm<sup>2</sup>, an open-circuit voltage of 714.8 mV, a fill factor of 84.04%, and a conversion efficiency of 25.77%.

Original languageEnglish
Pages (from-to)1521-1526
Number of pages6
JournalJournal of the Korean Physical Society
Volume66
Issue number10
DOIs
Publication statusPublished - 2015 May 8

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solar cells
cells
emitters
simulation
electrical resistivity
antireflection coatings
short circuit currents
carrier lifetime
electromagnetic absorption
minority carriers
open circuit voltage
quantum efficiency
counters
adjusting
electrical properties
current density
trends
life (durability)
electrodes
output

Keywords

  • Computer simulation
  • Electrical properties
  • Interdigitated backcontact solar cells
  • Optical properties
  • Solar cells

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

A simulation study on the electrical structure of interdigitated back-contact silicon solar cells. / Kang, Min Gu; Song, Hee eun; Kim, Soo Min; Kim, Donghwan.

In: Journal of the Korean Physical Society, Vol. 66, No. 10, 08.05.2015, p. 1521-1526.

Research output: Contribution to journalArticle

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