A small sized lateral trench electrode IGBT for improving latch-up and breakdown characteristics

Ey Goo Kang, Man Young Sung

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

A new small sized lateral trench electrode insulated gate bipolar transistor (LTEIGBT) was proposed to improve the characteristics of conventional lateral IGBT (LIGBT) and lateral trench gate IGBT (LTIGBT). The entire electrode of LTEIGBT was replace with trench-type electrode. The LTEIGBT was designed so that the width of device is no more than 19 μm. The latch-up current densities of LIGBT, LTIGBT and LTEIGBT were 120, 540, and 1230 A/cm2, respectively. The enhanced latch-up capability of the LTEIGBT was obtained through holes in the current directly reaching the cathode via the p+ cathode layer underneath n+ cathode layer. The forward blocking voltage of the LTEIGBT was 130 V. Conventional LIGBT and LTIGBT of the same size were no more than 60 and 100 V, respectively. Because the proposed device was constructed of trench-type electrodes, the electric field moved toward trench-oxide layer, and punch through breakdown of LTEIGBT is occurred, lately.

Original languageEnglish
Pages (from-to)295-300
Number of pages6
JournalSolid-State Electronics
Volume46
Issue number2
DOIs
Publication statusPublished - 2002 Feb 1

Fingerprint

latch-up
Insulated gate bipolar transistors (IGBT)
breakdown
bipolar transistors
Electrodes
electrodes
cathodes
Cathodes
punches

Keywords

  • Forward blocking voltage
  • Latch-up
  • Power integrated circuit
  • Power transistor
  • SOI thickness
  • Trench electrode
  • Turn-off

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

A small sized lateral trench electrode IGBT for improving latch-up and breakdown characteristics. / Kang, Ey Goo; Sung, Man Young.

In: Solid-State Electronics, Vol. 46, No. 2, 01.02.2002, p. 295-300.

Research output: Contribution to journalArticle

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