A small sized lateral trench electrode IGBT having improved latch-up and breakdown characteristics for power electronics

Ey Goo Kang, Seung Hyun Moon, Man Young Sung

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

A new small sized Lateral Trench Electrode Insulated Gate Bipolar Transistor (LTEIGBT) was proposed to improve characteristics of the conventional Lateral IGBT (LIGBT) and Lateral Trench gate IGBT (LTIGBT). The entire Electrode of LTEIGBT was replaced with trench-type electrode. The LTEIGBT was designed so that the width of device was 19μm. Latch-up current densities of the proposed LTEIGBT increased 10 and 2.3 times more than those of the conventional LIGBT and LTIGBT. Forward blocking voltage of the LTEIGBT was 130V. Conventional LIGBT and LTIGBT of the same size were 60V and 100V, respectively. Because the proposed LTEIGBT was constructed of trench-type electrodes, the electric field moved toward the trench-oxide layer and punch-through breakdown occurred, lately.

Original languageEnglish
Title of host publicationIEEE Region 10 International Conference on Electrical and Electronic Technology
EditorsD. Tien, Y.C. Liang, D. Tien, Y.C. Liang
Pages473-479
Number of pages7
Publication statusPublished - 2001 Dec 1
EventIEEE Region 10 International Conference on Electrical and Electronic Technology - Singapore, Singapore
Duration: 2001 Aug 192001 Aug 22

Other

OtherIEEE Region 10 International Conference on Electrical and Electronic Technology
CountrySingapore
CitySingapore
Period01/8/1901/8/22

Keywords

  • Forward blocking voltage
  • Latch-up
  • Power integrated circuits
  • Power transistor
  • Trench Electrode

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Kang, E. G., Moon, S. H., & Sung, M. Y. (2001). A small sized lateral trench electrode IGBT having improved latch-up and breakdown characteristics for power electronics. In D. Tien, Y. C. Liang, D. Tien, & Y. C. Liang (Eds.), IEEE Region 10 International Conference on Electrical and Electronic Technology (pp. 473-479)