A small sized Lateral Trench Electrode IGBT having improved latch-up and breakdown characteristics for power IC system

Ey Goo Kang; Seung Hyun Moon; Man Young Sung

A small sized Lateral Trench Electrode IGBT having improved latch-up and breakdown characteristics for power IC system

Ey Goo Kang, Seung Hyun Moon, Man Young Sung

* Honorary professors

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

A new small sized Lateral Trench Electrode Insulated Gate Bipolar Transistor (LTEIGBT) was proposed to improve characteristics of the conventional Lateral IGBT (LIGBT) and Lateral Trench gate IGBT (LTIGBT). The entire Electrode of LTEIGBT was replaced with trench-type electrode. The LTEIGBT was designed so that the width of device was 19 . Latch-up current densities of the proposed LTEIGBT increased 10 and 2.3 times more than those of the conventional LIGBT and LTIGBT. Forward blocking voltage of the LTEIGBT was 130V. Conventional LIGBT and LTIGBT of the same size were 60V and l00V, respectively. Because the proposed LTEIGBT was constructed of trench-type electrodes, the electric field moved toward the trench-oxide layer and punch-through breakdown occurred, lately.

Original language	English
Title of host publication	ICECS 2001 - 8th IEEE International Conference on Electronics, Circuits and Systems
Pages	385-388
Number of pages	4
Publication status	Published - 2001
Event	8th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2001 - , Malta Duration: 2001 Sep 2 → 2001 Sep 5

Publication series

Name	Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems
Volume	1

Other

Other	8th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2001
Country/Territory	Malta
Period	01/9/2 → 01/9/5

ASJC Scopus subject areas

Electrical and Electronic Engineering

Cite this

Kang, E. G., Moon, S. H., & Sung, M. Y. (2001). A small sized Lateral Trench Electrode IGBT having improved latch-up and breakdown characteristics for power IC system. In ICECS 2001 - 8th IEEE International Conference on Electronics, Circuits and Systems (pp. 385-388). [957760] (Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems; Vol. 1).

A small sized Lateral Trench Electrode IGBT having improved latch-up and breakdown characteristics for power IC system. / Kang, Ey Goo; Moon, Seung Hyun; Sung, Man Young.

ICECS 2001 - 8th IEEE International Conference on Electronics, Circuits and Systems. 2001. p. 385-388 957760 (Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems; Vol. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kang, EG, Moon, SH & Sung, MY 2001, A small sized Lateral Trench Electrode IGBT having improved latch-up and breakdown characteristics for power IC system. in ICECS 2001 - 8th IEEE International Conference on Electronics, Circuits and Systems., 957760, Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems, vol. 1, pp. 385-388, 8th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2001, Malta, 01/9/2.

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abstract = "A new small sized Lateral Trench Electrode Insulated Gate Bipolar Transistor (LTEIGBT) was proposed to improve characteristics of the conventional Lateral IGBT (LIGBT) and Lateral Trench gate IGBT (LTIGBT). The entire Electrode of LTEIGBT was replaced with trench-type electrode. The LTEIGBT was designed so that the width of device was 19 . Latch-up current densities of the proposed LTEIGBT increased 10 and 2.3 times more than those of the conventional LIGBT and LTIGBT. Forward blocking voltage of the LTEIGBT was 130V. Conventional LIGBT and LTIGBT of the same size were 60V and l00V, respectively. Because the proposed LTEIGBT was constructed of trench-type electrodes, the electric field moved toward the trench-oxide layer and punch-through breakdown occurred, lately.",

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AB - A new small sized Lateral Trench Electrode Insulated Gate Bipolar Transistor (LTEIGBT) was proposed to improve characteristics of the conventional Lateral IGBT (LIGBT) and Lateral Trench gate IGBT (LTIGBT). The entire Electrode of LTEIGBT was replaced with trench-type electrode. The LTEIGBT was designed so that the width of device was 19 . Latch-up current densities of the proposed LTEIGBT increased 10 and 2.3 times more than those of the conventional LIGBT and LTIGBT. Forward blocking voltage of the LTEIGBT was 130V. Conventional LIGBT and LTIGBT of the same size were 60V and l00V, respectively. Because the proposed LTEIGBT was constructed of trench-type electrodes, the electric field moved toward the trench-oxide layer and punch-through breakdown occurred, lately.

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A small sized Lateral Trench Electrode IGBT having improved latch-up and breakdown characteristics for power IC system

Abstract

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ASJC Scopus subject areas

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