A small sized Lateral Trench Electrode IGBT having improved latch-up and breakdown characteristics for power IC system

Ey Goo Kang, Seung Hyun Moon, Man Young Sung

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

A new small sized Lateral Trench Electrode Insulated Gate Bipolar Transistor (LTEIGBT) was proposed to improve characteristics of the conventional Lateral IGBT (LIGBT) and Lateral Trench gate IGBT (LTIGBT). The entire Electrode of LTEIGBT was replaced with trench-type electrode. The LTEIGBT was designed so that the width of device was 19 . Latch-up current densities of the proposed LTEIGBT increased 10 and 2.3 times more than those of the conventional LIGBT and LTIGBT. Forward blocking voltage of the LTEIGBT was 130V. Conventional LIGBT and LTIGBT of the same size were 60V and l00V, respectively. Because the proposed LTEIGBT was constructed of trench-type electrodes, the electric field moved toward the trench-oxide layer and punch-through breakdown occurred, lately.

Original languageEnglish
Title of host publicationProceedings of the IEEE International Conference on Electronics, Circuits, and Systems
Pages385-388
Number of pages4
Volume1
Publication statusPublished - 2001 Dec 1
Event8th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2001 - , Malta
Duration: 2001 Sep 22001 Sep 5

Other

Other8th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2001
CountryMalta
Period01/9/201/9/5

Fingerprint

Insulated gate bipolar transistors (IGBT)
Electrodes
Current density
Electric fields

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Kang, E. G., Moon, S. H., & Sung, M. Y. (2001). A small sized Lateral Trench Electrode IGBT having improved latch-up and breakdown characteristics for power IC system. In Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems (Vol. 1, pp. 385-388). [957760]

A small sized Lateral Trench Electrode IGBT having improved latch-up and breakdown characteristics for power IC system. / Kang, Ey Goo; Moon, Seung Hyun; Sung, Man Young.

Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems. Vol. 1 2001. p. 385-388 957760.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kang, EG, Moon, SH & Sung, MY 2001, A small sized Lateral Trench Electrode IGBT having improved latch-up and breakdown characteristics for power IC system. in Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems. vol. 1, 957760, pp. 385-388, 8th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2001, Malta, 01/9/2.
Kang EG, Moon SH, Sung MY. A small sized Lateral Trench Electrode IGBT having improved latch-up and breakdown characteristics for power IC system. In Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems. Vol. 1. 2001. p. 385-388. 957760
Kang, Ey Goo ; Moon, Seung Hyun ; Sung, Man Young. / A small sized Lateral Trench Electrode IGBT having improved latch-up and breakdown characteristics for power IC system. Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems. Vol. 1 2001. pp. 385-388
@inproceedings{2acc5480b24b464fa30cbc1d8978a30a,
title = "A small sized Lateral Trench Electrode IGBT having improved latch-up and breakdown characteristics for power IC system",
abstract = "A new small sized Lateral Trench Electrode Insulated Gate Bipolar Transistor (LTEIGBT) was proposed to improve characteristics of the conventional Lateral IGBT (LIGBT) and Lateral Trench gate IGBT (LTIGBT). The entire Electrode of LTEIGBT was replaced with trench-type electrode. The LTEIGBT was designed so that the width of device was 19 . Latch-up current densities of the proposed LTEIGBT increased 10 and 2.3 times more than those of the conventional LIGBT and LTIGBT. Forward blocking voltage of the LTEIGBT was 130V. Conventional LIGBT and LTIGBT of the same size were 60V and l00V, respectively. Because the proposed LTEIGBT was constructed of trench-type electrodes, the electric field moved toward the trench-oxide layer and punch-through breakdown occurred, lately.",
author = "Kang, {Ey Goo} and Moon, {Seung Hyun} and Sung, {Man Young}",
year = "2001",
month = "12",
day = "1",
language = "English",
isbn = "0780370570",
volume = "1",
pages = "385--388",
booktitle = "Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems",

}

TY - GEN

T1 - A small sized Lateral Trench Electrode IGBT having improved latch-up and breakdown characteristics for power IC system

AU - Kang, Ey Goo

AU - Moon, Seung Hyun

AU - Sung, Man Young

PY - 2001/12/1

Y1 - 2001/12/1

N2 - A new small sized Lateral Trench Electrode Insulated Gate Bipolar Transistor (LTEIGBT) was proposed to improve characteristics of the conventional Lateral IGBT (LIGBT) and Lateral Trench gate IGBT (LTIGBT). The entire Electrode of LTEIGBT was replaced with trench-type electrode. The LTEIGBT was designed so that the width of device was 19 . Latch-up current densities of the proposed LTEIGBT increased 10 and 2.3 times more than those of the conventional LIGBT and LTIGBT. Forward blocking voltage of the LTEIGBT was 130V. Conventional LIGBT and LTIGBT of the same size were 60V and l00V, respectively. Because the proposed LTEIGBT was constructed of trench-type electrodes, the electric field moved toward the trench-oxide layer and punch-through breakdown occurred, lately.

AB - A new small sized Lateral Trench Electrode Insulated Gate Bipolar Transistor (LTEIGBT) was proposed to improve characteristics of the conventional Lateral IGBT (LIGBT) and Lateral Trench gate IGBT (LTIGBT). The entire Electrode of LTEIGBT was replaced with trench-type electrode. The LTEIGBT was designed so that the width of device was 19 . Latch-up current densities of the proposed LTEIGBT increased 10 and 2.3 times more than those of the conventional LIGBT and LTIGBT. Forward blocking voltage of the LTEIGBT was 130V. Conventional LIGBT and LTIGBT of the same size were 60V and l00V, respectively. Because the proposed LTEIGBT was constructed of trench-type electrodes, the electric field moved toward the trench-oxide layer and punch-through breakdown occurred, lately.

UR - http://www.scopus.com/inward/record.url?scp=72749101719&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=72749101719&partnerID=8YFLogxK

M3 - Conference contribution

SN - 0780370570

SN - 9780780370579

VL - 1

SP - 385

EP - 388

BT - Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems

ER -