Abstract
A new small sized Lateral Trench Electrode Insulated Gate Bipolar Transistor (LTEIGBT) was proposed to improve characteristics of the conventional Lateral IGBT (LIGBT) and Lateral Trench gate IGBT (LTIGBT). The entire Electrode of LTEIGBT was replaced with trench-type electrode. The LTEIGBT was designed so that the width of device was 19 . Latch-up current densities of the proposed LTEIGBT increased 10 and 2.3 times more than those of the conventional LIGBT and LTIGBT. Forward blocking voltage of the LTEIGBT was 130V. Conventional LIGBT and LTIGBT of the same size were 60V and l00V, respectively. Because the proposed LTEIGBT was constructed of trench-type electrodes, the electric field moved toward the trench-oxide layer and punch-through breakdown occurred, lately.
| Original language | English |
|---|---|
| Title of host publication | Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems |
| Pages | 385-388 |
| Number of pages | 4 |
| Volume | 1 |
| Publication status | Published - 2001 Dec 1 |
| Event | 8th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2001 - , Malta Duration: 2001 Sep 2 → 2001 Sep 5 |
Other
| Other | 8th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2001 |
|---|---|
| Country | Malta |
| Period | 01/9/2 → 01/9/5 |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
Cite this
A small sized Lateral Trench Electrode IGBT having improved latch-up and breakdown characteristics for power IC system. / Kang, Ey Goo; Moon, Seung Hyun; Sung, Man Young.
Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems. Vol. 1 2001. p. 385-388 957760.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - A small sized Lateral Trench Electrode IGBT having improved latch-up and breakdown characteristics for power IC system
AU - Kang, Ey Goo
AU - Moon, Seung Hyun
AU - Sung, Man Young
PY - 2001/12/1
Y1 - 2001/12/1
N2 - A new small sized Lateral Trench Electrode Insulated Gate Bipolar Transistor (LTEIGBT) was proposed to improve characteristics of the conventional Lateral IGBT (LIGBT) and Lateral Trench gate IGBT (LTIGBT). The entire Electrode of LTEIGBT was replaced with trench-type electrode. The LTEIGBT was designed so that the width of device was 19 . Latch-up current densities of the proposed LTEIGBT increased 10 and 2.3 times more than those of the conventional LIGBT and LTIGBT. Forward blocking voltage of the LTEIGBT was 130V. Conventional LIGBT and LTIGBT of the same size were 60V and l00V, respectively. Because the proposed LTEIGBT was constructed of trench-type electrodes, the electric field moved toward the trench-oxide layer and punch-through breakdown occurred, lately.
AB - A new small sized Lateral Trench Electrode Insulated Gate Bipolar Transistor (LTEIGBT) was proposed to improve characteristics of the conventional Lateral IGBT (LIGBT) and Lateral Trench gate IGBT (LTIGBT). The entire Electrode of LTEIGBT was replaced with trench-type electrode. The LTEIGBT was designed so that the width of device was 19 . Latch-up current densities of the proposed LTEIGBT increased 10 and 2.3 times more than those of the conventional LIGBT and LTIGBT. Forward blocking voltage of the LTEIGBT was 130V. Conventional LIGBT and LTIGBT of the same size were 60V and l00V, respectively. Because the proposed LTEIGBT was constructed of trench-type electrodes, the electric field moved toward the trench-oxide layer and punch-through breakdown occurred, lately.
UR - http://www.scopus.com/inward/record.url?scp=72749101719&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=72749101719&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:72749101719
SN - 0780370570
SN - 9780780370579
VL - 1
SP - 385
EP - 388
BT - Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems
ER -