A small-sized lateral trench electrode insulated gate bipolar transistor for improving latch-up and breakdown characteristics

E. G. Kang, S. H. Moon, Man Young Sung

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

A new small-sized lateral trench electrode insulated gate bipolar transistor (LTEIGBT) was proposed to improve the characteristics of the conventional lateral IGBT (LIGBT) and the lateral trench gate IGBT (LTIGBT). The entire electrode of the LTEIGBT was replaced with a trench-type electrode. The LTEIGBT was designed so that the width of the device was no more than 19 μm. The latch-up current densities of LIGBT, LTIGBT and LTEIGBT were 120 A/cm2, 540 A/cm2, and 1230 A/cm2, respectively. The enhanced latch-up capability of the LTEIGBT was obtained due to the holes in the current directly reaching the cathode via the p+ cathode layer underneath the n+ cathode layer. The forward blocking voltage of the LTEIGBT was 130 V. Those for conventional LIGBT and LTIGBT of the same size were no more than 60 V and 100 V, respectively. Because the proposed device was constructed of trench-type electrodes, the electric field moved toward the trench-oxide layer, and punch-through breakdown of LTEIGBT occurred late.

Original languageEnglish
Pages (from-to)5262-5266
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume40
Issue number9 A
Publication statusPublished - 2001 Sep 1

Fingerprint

latch-up
Insulated gate bipolar transistors (IGBT)
bipolar transistors
breakdown
Electrodes
electrodes
cathodes
Cathodes
punches

Keywords

  • Forward blocking voltage
  • Latch-up
  • Power integrated circuit
  • Power transistor
  • SOI thickness
  • Trench electrode
  • Turn-off

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

@article{d4bf1fb8cf4845fb8a675e4cdeaffa82,
title = "A small-sized lateral trench electrode insulated gate bipolar transistor for improving latch-up and breakdown characteristics",
abstract = "A new small-sized lateral trench electrode insulated gate bipolar transistor (LTEIGBT) was proposed to improve the characteristics of the conventional lateral IGBT (LIGBT) and the lateral trench gate IGBT (LTIGBT). The entire electrode of the LTEIGBT was replaced with a trench-type electrode. The LTEIGBT was designed so that the width of the device was no more than 19 μm. The latch-up current densities of LIGBT, LTIGBT and LTEIGBT were 120 A/cm2, 540 A/cm2, and 1230 A/cm2, respectively. The enhanced latch-up capability of the LTEIGBT was obtained due to the holes in the current directly reaching the cathode via the p+ cathode layer underneath the n+ cathode layer. The forward blocking voltage of the LTEIGBT was 130 V. Those for conventional LIGBT and LTIGBT of the same size were no more than 60 V and 100 V, respectively. Because the proposed device was constructed of trench-type electrodes, the electric field moved toward the trench-oxide layer, and punch-through breakdown of LTEIGBT occurred late.",
keywords = "Forward blocking voltage, Latch-up, Power integrated circuit, Power transistor, SOI thickness, Trench electrode, Turn-off",
author = "Kang, {E. G.} and Moon, {S. H.} and Sung, {Man Young}",
year = "2001",
month = "9",
day = "1",
language = "English",
volume = "40",
pages = "5262--5266",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "9 A",

}

TY - JOUR

T1 - A small-sized lateral trench electrode insulated gate bipolar transistor for improving latch-up and breakdown characteristics

AU - Kang, E. G.

AU - Moon, S. H.

AU - Sung, Man Young

PY - 2001/9/1

Y1 - 2001/9/1

N2 - A new small-sized lateral trench electrode insulated gate bipolar transistor (LTEIGBT) was proposed to improve the characteristics of the conventional lateral IGBT (LIGBT) and the lateral trench gate IGBT (LTIGBT). The entire electrode of the LTEIGBT was replaced with a trench-type electrode. The LTEIGBT was designed so that the width of the device was no more than 19 μm. The latch-up current densities of LIGBT, LTIGBT and LTEIGBT were 120 A/cm2, 540 A/cm2, and 1230 A/cm2, respectively. The enhanced latch-up capability of the LTEIGBT was obtained due to the holes in the current directly reaching the cathode via the p+ cathode layer underneath the n+ cathode layer. The forward blocking voltage of the LTEIGBT was 130 V. Those for conventional LIGBT and LTIGBT of the same size were no more than 60 V and 100 V, respectively. Because the proposed device was constructed of trench-type electrodes, the electric field moved toward the trench-oxide layer, and punch-through breakdown of LTEIGBT occurred late.

AB - A new small-sized lateral trench electrode insulated gate bipolar transistor (LTEIGBT) was proposed to improve the characteristics of the conventional lateral IGBT (LIGBT) and the lateral trench gate IGBT (LTIGBT). The entire electrode of the LTEIGBT was replaced with a trench-type electrode. The LTEIGBT was designed so that the width of the device was no more than 19 μm. The latch-up current densities of LIGBT, LTIGBT and LTEIGBT were 120 A/cm2, 540 A/cm2, and 1230 A/cm2, respectively. The enhanced latch-up capability of the LTEIGBT was obtained due to the holes in the current directly reaching the cathode via the p+ cathode layer underneath the n+ cathode layer. The forward blocking voltage of the LTEIGBT was 130 V. Those for conventional LIGBT and LTIGBT of the same size were no more than 60 V and 100 V, respectively. Because the proposed device was constructed of trench-type electrodes, the electric field moved toward the trench-oxide layer, and punch-through breakdown of LTEIGBT occurred late.

KW - Forward blocking voltage

KW - Latch-up

KW - Power integrated circuit

KW - Power transistor

KW - SOI thickness

KW - Trench electrode

KW - Turn-off

UR - http://www.scopus.com/inward/record.url?scp=0035456896&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035456896&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0035456896

VL - 40

SP - 5262

EP - 5266

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 9 A

ER -