A SPICE model of silicon tunneling field-effect transistors

Sola Woo, Minsuk Kim, Sangsig Kim

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

In this study, we propose a precise model of silicon tunneling field-effect transistors (TFETs) by modifying the Kane-Sze tunneling formula. In our model, a reference device is calibrated by utilizing TCAD and SPICE simulation. Electrical parameters extracted in our TCAD simulation are applied to a SPICE model not only for adopting the off-state current of a p-i-n diode under a reverse bias state but also for developing the threshold voltage and electric field equations. Furthermore, a basic complementary TFET inverter is simulated to demonstrate the capabilities of our proposed model.

Original languageEnglish
Pages (from-to)66-71
Number of pages6
JournalMicroelectronic Engineering
Volume191
DOIs
Publication statusPublished - 2018 May 5

Fingerprint

SPICE
Silicon
Field effect transistors
field effect transistors
silicon
p-i-n diodes
Threshold voltage
threshold voltage
Diodes
simulation
Electric fields
electric fields
thiazole-4-carboxamide adenine dinucleotide

Keywords

  • Calibration
  • Device modeling
  • SPICE model
  • TCAD simulation
  • Tunnel FET

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

A SPICE model of silicon tunneling field-effect transistors. / Woo, Sola; Kim, Minsuk; Kim, Sangsig.

In: Microelectronic Engineering, Vol. 191, 05.05.2018, p. 66-71.

Research output: Contribution to journalArticle

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