A spin field effect transistor using stray magnetic fields

Hyun Cheol Koo, Jonghwa Eom, Joonyeon Chang, Suk Hee Han

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

A spin field effect transistor (spin-FET) using the stray magnetic field induced by ferromagnetic patterns is suggested. Spin polarized electrons are generated by the Zeeman splitting effect at source and selected spins are transmitted by the spin filtering effect at drain. Datta and Das spin transistor needs spin injection and detection in a ferromagnet-semiconductor hybrid junction. This new design has an advantage over the previous spin-FET concept by removing the current flowing at an interface between ferromagnetic metal and semiconductor channel.

Original languageEnglish
Pages (from-to)1016-1019
Number of pages4
JournalSolid-State Electronics
Volume53
Issue number9
DOIs
Publication statusPublished - 2009 Sep 1
Externally publishedYes

Fingerprint

Field effect transistors
field effect transistors
Semiconductor materials
Magnetic fields
Ferromagnetic materials
magnetic fields
Transistors
Electrons
transistors
injection
metals
electrons

Keywords

  • 2DEG
  • Spin filtering
  • Spin-FET
  • Stray field
  • Zeeman splitting

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

Cite this

A spin field effect transistor using stray magnetic fields. / Koo, Hyun Cheol; Eom, Jonghwa; Chang, Joonyeon; Han, Suk Hee.

In: Solid-State Electronics, Vol. 53, No. 9, 01.09.2009, p. 1016-1019.

Research output: Contribution to journalArticle

Koo, Hyun Cheol ; Eom, Jonghwa ; Chang, Joonyeon ; Han, Suk Hee. / A spin field effect transistor using stray magnetic fields. In: Solid-State Electronics. 2009 ; Vol. 53, No. 9. pp. 1016-1019.
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